公开(公告)号：US09138994B2

公开(公告)日：2015-09-22

申请号：US12683550

申请日：2010-01-07

Applicant: Jung-Huei Peng ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Ting-Hau Wu

Inventor： Jung-Huei Peng ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Ting-Hau Wu

IPC: B41J2/05 ,  B41J2/14 ,  B41J2/16

CPC classification number: B41J2/14088 ,  B41J2/14016 ,  B41J2/16 ,  B41J2/1626 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1646

Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.

Abstract translation: 描述了MEMS器件及其制造方法。 在一个实施例中，MEMS器件包括设置在衬底上的底部合金层。 内层材料层设置在底层合金层上，顶层合金层设置在内层材料层上，顶层合金层和底层合金层均含有至少两种金属的合金，其中内层含有合金和氮 。 顶部合金层，内部材料层和底部合金层形成MEMS特征。

公开(公告)号：US08455999B2

公开(公告)日：2013-06-04

申请号：US13240540

申请日：2011-09-22

Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

IPC: H01L23/34

CPC classification number: B81C1/00666 ,  H01L23/562 ,  H01L24/16 ,  H01L24/31 ,  H01L24/48 ,  H01L24/95 ,  H01L29/0657 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83365 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.

Abstract translation: 一种形成集成电路结构的方法，包括提供包括前表面和后表面的晶片，其中所述晶片包括芯片; 形成从后表面延伸到芯片中的开口; 在开口中填充有机材料，其中基本上没有部分有机材料在晶片的开口和背面之外; 并烘烤有机材料以引起有机材料的收缩。

公开(公告)号：US08367516B2

公开(公告)日：2013-02-05

申请号：US12618477

申请日：2009-11-13

Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

IPC: H01L21/30

CPC classification number: B23K26/24 ,  H01L24/03 ,  H01L24/48 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/484 ,  H01L2224/85 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

Abstract: Methods and structures using laser bonding for stacking semiconductor substrates are described. In one embodiment, a method of forming a semiconductor device includes forming a trench in a first substrate, and a bond pad on a second substrate comprising active circuitry. A top surface of the bond pad includes a first material. The first substrate is aligned over the second substrate to align the trench over the bond pad. An electromagnetic beam is directed into the trench to form a bond between the first material on the bond pad and a second material at a bottom surface of the first substrate.

公开(公告)号：US08281658B2

公开(公告)日：2012-10-09

申请号：US12352449

申请日：2009-01-12

Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai

Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai

IPC: G01C19/00

CPC classification number: G01C19/56 ,  Y10T29/49002

Abstract: A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam adjacent to a first edge of the gyro disk. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk.

Abstract translation: 陀螺传感器包括陀螺盘。 第一光源被配置为提供与陀螺盘的第一边缘相邻的第一光束。 第一光接收器被配置为接收用于感测陀螺盘的第一方向上的振动的第一光束。

公开(公告)号：US08237235B2

公开(公告)日：2012-08-07

申请号：US12692118

申请日：2010-01-22

Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee

Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee

IPC: H01L29/84 ,  H01L23/495

CPC classification number: B81C1/00095 ,  B81B2203/0384

Abstract: A metal-ceramic multilayer structure is provided. The underlying layers of the metal/ceramic multilayer structure have sloped sidewalls such that cracking of the metal-ceramic multilayer structure may be reduced or eliminated. In an embodiment, a layer immediately underlying the metal-ceramic multilayer has sidewalls sloped less than 75 degrees. Subsequent layers underlying the layer immediately underlying the metal/ceramic layer have sidewalls sloped greater than 75 degrees. In this manner, less stress is applied to the overlying metal/ceramic layer, particularly in the corners, thereby reducing the cracking of the metal-ceramic multilayer. The metal/ceramic multilayer structure includes one or more alternating layers of a metal seed layer and a ceramic layer.

Abstract translation: 提供了一种金属陶瓷多层结构。 金属/陶瓷多层结构的下层具有倾斜的侧壁，从而可以减少或消除金属 - 陶瓷多层结构的开裂。 在一个实施例中，紧邻金属陶瓷多层的底层的侧壁倾斜小于75度。 紧邻金属/陶瓷层下面的层下面的后续层具有倾斜大于75度的侧壁。 以这种方式，对上覆的金属/陶瓷层，特别是在角部施加较小的应力，从而减少金属 - 陶瓷多层的开裂。 金属/陶瓷多层结构包括金属种子层和陶瓷层的一个或多个交替层。

公开(公告)号：US08053336B2

公开(公告)日：2011-11-08

申请号：US12610873

申请日：2009-11-02

Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

IPC: H01L21/00

CPC classification number: B81C1/00666 ,  H01L23/562 ,  H01L24/16 ,  H01L24/31 ,  H01L24/48 ,  H01L24/95 ,  H01L29/0657 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83365 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.

Abstract translation: 一种形成集成电路结构的方法，包括提供包括前表面和后表面的晶片，其中所述晶片包括芯片; 形成从后表面延伸到芯片中的开口; 在开口中填充有机材料，其中基本上没有部分有机材料在晶片的开口和背面之外; 并烘烤有机材料以引起有机材料的收缩。

公开(公告)号：US07923379B2

公开(公告)日：2011-04-12

申请号：US12347250

申请日：2008-12-31

Applicant: Jiou-Kang Lee ,  Ting-Hau Wu ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Chun-Ren Cheng

Inventor： Jiou-Kang Lee ,  Ting-Hau Wu ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Chun-Ren Cheng

IPC: H01L21/31

CPC classification number: B81C1/00071 ,  B81B2201/052 ,  B81B2201/058 ,  H01L21/76898

Abstract: A method of forming an integrated circuit structure includes forming an opening in a substrate, with the opening extending from a top surface of the substrate into the substrate. The opening is filled with a filling material until a top surface of the filling material is substantially level with the top surface of the substrate. A device is formed over the top surface of the substrate, wherein the device includes a storage opening adjoining the filling material. A backside of the substrate is grinded until the filling material is exposed. The filling material is removed from the channel until the storage opening of the device is exposed.

Abstract translation: 形成集成电路结构的方法包括在衬底中形成开口，其中开口从衬底的顶表面延伸到衬底中。 开口填充有填充材料，直到填充材料的顶表面基本上与基板的顶表面平齐。 在衬底的顶表面上形成器件，其中该器件包括与填充材料相邻的存储开口。 研磨衬底的背面，直到填充材料暴露。 将填充材料从通道中取出直到设备的存储开口露出。

公开(公告)号：US08883021B2

公开(公告)日：2014-11-11

申请号：US13465928

申请日：2012-05-07

Applicant: Yi-Hsien Chang ,  Chun-Ren Cheng ,  Yi-Shao Liu ,  Allen Timothy Chang ,  Ching-Ray Chen ,  Yeh-Tseng Li ,  Wen-Hsiang Lin

Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Yi-Shao Liu ,  Allen Timothy Chang ,  Ching-Ray Chen ,  Yeh-Tseng Li ,  Wen-Hsiang Lin

IPC: B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  H01B13/00

CPC classification number: B81C1/00349 ,  B81B2201/042 ,  B81C1/00111 ,  B81C1/00206 ,  B81C1/00214 ,  B82Y20/00 ,  G01N27/44791

Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.

Abstract translation: MEMS纳米结构的形成方法包括：衬底的一部分被凹入以在衬底中形成多个台面。 多个台面中的每一个具有顶表面和侧壁表面。 光反射层沉积在衬底上，从而覆盖每个台面的顶表面和侧壁表面。 在光反射层上形成保护层。 在保护层上形成ARC层。 在每个台面上的ARC层上形成光致抗蚀剂层的开口。 通过开口去除ARC层，保护层和光反射层的一部分以暴露每个台面的顶表面。 去除每个台面的顶表面上的光致抗蚀剂层和ARC层。

公开(公告)号：US20130000409A1

公开(公告)日：2013-01-03

申请号：US13610178

申请日：2012-09-11

Applicant: Ting-Hau WU ,  Chun-Ren CHENG ,  Jiou-Kang LEE ,  Jung-Huei PENG ,  Shang-Ying TSAI

Inventor： Ting-Hau WU ,  Chun-Ren CHENG ,  Jiou-Kang LEE ,  Jung-Huei PENG ,  Shang-Ying TSAI

IPC: G01H9/00

CPC classification number: G01C19/56 ,  Y10T29/49002

Abstract: A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk. A second light source is configured to provide a second light beam substantially parallel with the first light beam. A second light receiver is configured to receive the second light beam for sensing a vibration in a second direction of the gyro disk. The second direction is different from the first direction.

Abstract translation: 陀螺传感器包括陀螺盘。 第一光源被配置为提供第一光束。 第一光接收器被配置为接收用于感测陀螺盘的第一方向上的振动的第一光束。 第二光源被配置为提供基本上与第一光束平行的第二光束。 第二光接收器被配置为接收用于感测陀螺盘的第二方向上的振动的第二光束。 第二个方向与第一个方向不同。

公开(公告)号：US08309441B2

公开(公告)日：2012-11-13

申请号：US13176548

申请日：2011-07-05

Applicant: Jiou-Kang Lee ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Ting-Hau Wu ,  Hsiang-Fu Chen

Inventor： Jiou-Kang Lee ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Ting-Hau Wu ,  Hsiang-Fu Chen

IPC: H01L21/82

CPC classification number: B81C1/00111 ,  B81B2201/042 ,  B81B2203/0392 ,  B81B2203/04 ,  B81B2207/056 ,  B81C2201/019 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.

Abstract translation: 一个实施例是形成电路结构的方法。 该方法包括在衬底上形成第一非晶层; 在所述第一非晶层上方形成第一胶合层; 在所述第一胶层上形成第二非晶层; 以及通过去除所述第一非晶层的第一部分和所述第二非晶层的第一部分来形成彼此分离的多个柱。 所述多个柱中的至少一些各自包括所述第一非晶层的第二部分，所述第一胶合层的第一部分和所述第二非晶层的第二部分。