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公开(公告)号:US20230415482A1
公开(公告)日:2023-12-28
申请号:US18465031
申请日:2023-09-11
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Stanley J. Wang , Anthony M. Fuller
CPC classification number: B41J2/1433 , B01L3/502715 , B81B7/0025 , B01L2200/12 , B81B2201/052
Abstract: Aspects of the present disclosure are directed to an apparatus including a circuit region and a fluidic region. In a particular example, the circuit region with logical circuits thereon, includes a thermal oxide layer on a silicon substrate, and a dielectric layer over the field oxide layer, the dielectric layer including a doped dielectric film. The microfluidic device further includes a fluidic region including fluid ports formed through a surface of the apparatus and including an un-doped dielectric film. The fluidic region includes an aperture in the dielectric layer, where the aperture is defined by a dielectric wall which forms part of the dielectric layer. A sealing film deposited over the dielectric wall may prevent the doped dielectric film from contacting fluid contained in the fluid port.
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公开(公告)号:US11807523B2
公开(公告)日:2023-11-07
申请号:US17482309
申请日:2021-09-22
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Chien-Hua Chen , Devin A. Mourey , Michael G. Groh
CPC classification number: B81C99/008 , B01L3/0268 , B41J2/155 , B41J2/1603 , B41J2/1637 , B81C1/00309 , B41J2202/19 , B41J2202/20 , B41J2202/21 , B81B2201/052 , B81B2201/058 , B81B2203/0315 , B81B2203/0338 , B81C2201/0188 , B81C2203/0154
Abstract: Examples include a device comprising integrated circuit dies molded into a molded panel. The molded panel has three-dimensional features formed therein, where the three-dimensional features are associated with the integrated circuit dies. To form the three-dimensional features, a feature formation material is deposited, the molded panel is formed, and the feature formation material is removed.
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公开(公告)号:US20180093882A1
公开(公告)日:2018-04-05
申请号:US15698459
申请日:2017-09-07
Applicant: SEIKO EPSON CORPORATION
Inventor: Masashi YOSHIIKE
CPC classification number: B81B7/007 , B41J2/14 , B41J2/14233 , B41J2/1607 , B41J2/161 , B41J2/1621 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2002/14362 , B41J2002/14491 , B81B2201/052 , B81B2207/07 , B81C1/00301 , B81C2201/013
Abstract: There is provided a MEMS device including: a substrate having a resin portion that protrudes from one surface thereof and is made of a resin, in which the first wiring extends along a first direction on the one surface from a position overlapping the resin portion to a position deviating from the resin portion, and in which a width of the resin portion is equal to or larger than a width of the first wiring covering the resin portion in a second direction intersecting the first direction.
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公开(公告)号:US20180050530A1
公开(公告)日:2018-02-22
申请号:US15660643
申请日:2017-07-26
Applicant: SEIKO EPSON CORPORATION
Inventor: Hiroyuki TSUCHIYA
CPC classification number: B32B37/12 , B32B2307/538 , B41J2/161 , B41J2/1612 , B41J2/1623 , B41J2/1628 , B81B2201/052 , B81C3/001 , B81C2203/032 , C09J5/00
Abstract: A manufacturing method of a joined body in which a plurality of structures are joined to each other, the method including forming of an adhesive layer on one face of a medium; adjusting of viscosity of the adhesive layer formed in the forming of the adhesive layer; transcribing the adhesive layer of which viscosity is adjusted in the adjusting of viscosity to the structure; and measuring of surface roughness of the adhesive layer on a transcribing film in a stage before the transcribing.
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公开(公告)号:US20170349431A1
公开(公告)日:2017-12-07
申请号:US15623267
申请日:2017-06-14
Applicant: Memjet Technology Ltd.
Inventor: Angus North , Ronan O'Reilly , Gregory McAvoy
CPC classification number: B81C1/00611 , B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1639 , B41J2/1645 , B81B2201/052 , B81B2203/0353 , B81C2201/0104 , B81C2201/0121
Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a photoimageable thermoplastic polymer onto the frontside surface and into each hole; (ii) reflowing the polymer; (iii) selectively removing the polymer from regions outside a periphery of each hole, the selective removing comprising exposure and development of the polymer; (iv) optionally repeating steps (i) to (iii) until each hole is overfilled with the polymer; and (v) planarizing the frontside surface to provide one or more holes filled with a plug of the polymer. Each plug has a respective upper surface coplanar with the frontside surface.
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公开(公告)号:US20170144438A1
公开(公告)日:2017-05-25
申请号:US15354864
申请日:2016-11-17
Applicant: SEIKO EPSON CORPORATION
Inventor: Masumi HAYAKAWA , Takashi KATO
CPC classification number: B41J2/1433 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2002/14241 , B41J2002/14362 , B41J2002/14491 , B81B7/0006 , B81B2201/052 , B81B2201/057 , B81B2203/0315 , B81B2207/056 , B81B2207/07 , B81C3/001 , B81C2203/037
Abstract: A wiring structure includes a connecting terminal array formed on a first substrate and a connected terminal array formed on a second substrate, which are electrically connected, wherein a dummy terminal that is not used for transmission and reception of an electrical signal is provided on at least one end of the connecting terminal array in a terminal arrangement direction, and an anisotropic conductive film containing a conductive particle which is disposed between the first substrate and the second substrate extends to the dummy terminal such that an end of the anisotropic conductive film is located on a surface of the dummy terminal.
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公开(公告)号:US20160200568A1
公开(公告)日:2016-07-14
申请号:US14914215
申请日:2013-08-30
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, LP
Inventor: Patrick Wayne Sadik , Roger A. McKay
CPC classification number: B81C1/00063 , B41J2/162 , B41J2/1626 , B81B2201/052 , B81C2201/0115 , B81C2201/0133 , B81C2201/0181
Abstract: An example provides a method including sputtering a metal catalyst onto a substrate, exposing the substrate to a solution that reacts with the metal catalyst to form a plurality of pores in the substrate, and etching the substrate to remove the plurality of pores to form a recess in the substrate.
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公开(公告)号:US20150102835A1
公开(公告)日:2015-04-16
申请号:US14512105
申请日:2014-10-10
Applicant: OCE-TECHNOLOGIES B.V.
Inventor: Maikel A.J. HUYGENS , René J. VAN DER MEER , Reinier PANNEKOEK , Alex N. WESTLAND
CPC classification number: B81C99/004 , B41J2/14233 , B41J2/161 , B41J2/1632 , B41J2/1635 , B41J2002/14241 , B41J2002/14459 , B41J2002/14491 , B81B7/007 , B81B2201/052 , B81B2207/03 , B81C1/00301 , G01R31/02 , G01R31/2601 , H05K1/0268 , H05K1/111 , H05K2201/09372
Abstract: A substrate plate is provided for at least one MEMS device to be mounted thereon. The MEMS device has a certain footprint on the substrate plate, and the substrate plate has a pattern of electrically conductive leads to be connected to electric components of the MEMS device. The pattern forms contact pads within the footprint of the MEMS device and includes at least one lead structure that extends on the substrate plate outside of the footprint of the MEMS device and connects a number of the contact pads to an extra contact pad. The lead structure is a shunt bar that interconnects a plurality of contact pads of the MEMS device and is arranged to be removed by means of a dicing cut separating the substrate plate into a plurality of chip-sized units. At least a major part of the extra contact pad is formed within the footprint of one of the MEMS devices.
Abstract translation: 为安装在其上的至少一个MEMS装置提供基板。 MEMS器件在衬底板上具有一定的占地面积,并且衬底板具有连接到MEMS器件的电气部件的导电引线的图案。 该图案形成MEMS器件的覆盖区内的接触焊盘,并且包括至少一个引线结构,该引线结构在MEMS器件的覆盖区外部的衬底板上延伸,并将多个接触焊盘连接到额外的接触焊盘。 引线结构是将MEMS器件的多个接触焊盘互连的分流棒,并且被布置成通过将衬底板分成多个芯片尺寸的单元的切割切割来去除。 额外接触焊盘的至少主要部分形成在MEMS器件之一的覆盖区内。
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公开(公告)号:US20140024147A1
公开(公告)日:2014-01-23
申请号:US13552721
申请日:2012-07-19
Applicant: Yonglin Xie , Weibin Zhang
Inventor: Yonglin Xie , Weibin Zhang
IPC: H01L21/308
CPC classification number: B41J2/1601 , B41J2/1607 , B41J2/1628 , B41J2/1631 , B41J2/1639 , B41J2/1645 , B81B2201/032 , B81B2201/052 , B81C1/00158
Abstract: A MEMS device fabrication method includes providing a substrate and a chamber wall material layer on a first surface of the substrate, the chamber wall material layer including a chamber cavity having a sacrificial material located therein. A mask material is deposited on the chamber wall material layer and the sacrificial material and patterned to form a mask pattern including a plurality of discrete portions. The mask material and some of the sacrificial material are removed to transfer the mask pattern including the plurality of discrete portions to the sacrificial material. A membrane material layer is deposited on the chamber wall material layer and the sacrificial material that includes the transferred mask pattern including the plurality of discrete portions. Some of the substrate and the sacrificial material are removed to release the membrane material layer using at least one process initiated from a second surface of the substrate.
Abstract translation: MEMS器件制造方法包括在衬底的第一表面上提供衬底和室壁材料层,室壁材料层包括具有位于其中的牺牲材料的腔室腔。 掩模材料沉积在室壁材料层和牺牲材料上并被图案化以形成包括多个离散部分的掩模图案。 去除掩模材料和一些牺牲材料以将包括多个离散部分的掩模图案转移到牺牲材料。 膜材料层沉积在室壁材料层和牺牲材料上,该牺牲材料包括包含多个离散部分的转印掩模图案。 使用从衬底的第二表面引发的至少一种工艺,去除一些衬底和牺牲材料以释放膜材料层。
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公开(公告)号:US20120168010A1
公开(公告)日:2012-07-05
申请号:US13381791
申请日:2010-07-02
Applicant: Wolfgang Andreas Bauer , Wilhelm T.S. Huck , Martin Fischlechner
Inventor: Wolfgang Andreas Bauer , Wilhelm T.S. Huck , Martin Fischlechner
CPC classification number: B01L3/502707 , B01F17/00 , B01J2219/00511 , B01J2219/0059 , B01J2219/00637 , B01J2219/00783 , B01J2219/00788 , B01J2219/00831 , B01J2219/00833 , B01J2219/00837 , B01J2219/0097 , B01L2200/0636 , B01L2300/0867 , B01L2300/16 , B01L2300/161 , B05C7/04 , B05D7/22 , B05D7/222 , B81B2201/0214 , B81B2201/05 , B81B2201/052 , B81B2201/058 , B81C1/00119 , B81C1/00206 , Y10T137/8593
Abstract: We describe a method of layer-by-layer deposition of a plurality of layers of material onto the wall or walls of a channel of a microfluidic device, the method comprising: loading a tube with a series of segments of solution, a said segment of solution bearing a material to be deposited; coupling said tube to said microfluidic device; and injecting said segments of solution into said microfluidic device such that said segments of solution pass, in turn, through said channel depositing successive layers of material to perform said layer-by-layer deposition onto said wall or walls of said channel. Embodiments of the methods are particularly useful for automated surface modification of plastic, for example PDMS (Poly(dimethylsiloxane)), microchannels. We also describe methods and apparatus for forming double-emulsions.
Abstract translation: 我们描述了将多层材料层逐层沉积到微流体装置的通道的壁或壁上的方法,该方法包括:将具有一系列溶液段的管装载, 含有待沉积材料的溶液; 将所述管连接到所述微流体装置; 以及将所述溶液段注射到所述微流体装置中,使得所述溶液段又通过所述通道沉积连续的材料层,以在所述通道的所述壁或壁上执行所述逐层沉积。 该方法的实施方案对于塑料的自动表面改性特别有用,例如PDMS(聚(二甲基硅氧烷)),微通道。 我们还描述了形成双重乳液的方法和设备。
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