Abstract:
A microwave-excited plasma source using a ridged wave-guide line-type microwave plasma reactor is disclosed. The microwave-excited plasma source comprises a reaction chamber, a ridged wave-guide and a separation plate. The ridged wave-guide is disposed on the reaction chamber, and comprises a frame portion, a ridge portion and a line-shaped slot. The line-shaped slot is disposed on a first side of the frame portion, and the ridge portion facing the line-shaped slot is disposed on a second side of the frame portion. The separation plate is disposed on the line-shaped slot. Moreover, the ridged wave-guide is suitable for concentrating microwave power, which is transmitted to the reaction chamber through the line-shaped slot in order to excite plasma.
Abstract:
A power-delivery mechanism is provided in the present invention, which utilizes an element with airtight and flexible characteristics coupled to a power-generating unit so as to generate a motion in a specific direction. Besides, an apparatus of plasma -enhanced chemical vapor deposition (PECVD) is also provided in the present invention, which comprises the power-delivery mechanism to load/unload a workpiece onto a stage for processing automatically. Meanwhile, the present invention also provides a height-adjusting unit and a position-indicating unit allowing the operator to adjust the distance between an upper electrode and a lower electrode of the PECVD so that the operator is capable of monitoring and adjusting the distance easily between the upper electrode and the lower electrode outside the chamber of the PECVD.
Abstract:
A ruthenium complex having a chemical formula of RuL1L2X is provided. The chemical formula includes a structural formula represented by the following Formula (I): in which, X is a monodentate anion ligand, L1 and L2 respectively represent a heterocyclic tridentate ligand with a structure shown in the following structural formula (II): and a bipyridine ligand derivative with a structure shown in the following structural formula (III): in which R1, R2, R4 and R5 of L1 and L2 are the same or different substituents and represent alkyl, alkoxy, aminoalkyl, haloalkanes or substituted phenyl group, carboxylic acid group or acid radical salt thereof, sulfonic acid group or acid radical salt thereof, phosphoric acid group or acid radical salt thereof or hydrogen atom. R3 represents perhalogenated alkyl group, alkoxy, alkyl, amino, halogens, or hydrogen atom. The ruthenium complexes are suitable for being used as dye-sensitizers for fabricating dye-sensitized solar cells.
Abstract:
A wafer backside protection apparatus includes a motor, a vacuum chuck, an annular seat and a top cover. The motor has an output shaft upon which the chuck is mounted. The chuck has a front surface to suck and hold a wafer from its backside. The chuck has a backside in which a water guard ring and a plurality of slant bores are formed. The slant bores run from the water guard ring through the wafer front surface. The annular seat is located below the chuck and has two symmetrical slant nozzles projecting toward motor rotating direction for ejecting protection liquid to the water guard ring. Protection liquid may be spun and splashed out through the slant bores to form a protection liquid film between the chuck and the wafer backside due to centrifugal force resulting from chuck and wafer rotation driven by the motor. The protection liquid film may protect wafer backside from chemical erosion and contamination resulting from wafer production process.