Abstract:
A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.
Abstract:
A support frame structure mounted inside the housing of a computer system for supporting electronic drives is disclosed to include a plurality of upright partition plates affixed to the bottom panel between two upright side panels of the housing, a cover plate fastened to the upright side panels of the housing and covered on the upright partition plates, and a detachable upright back panel, which has a bottom side engaged into notched locating strips at the back side of each upright partition plate and a top side terminating in a forwardly extended bend, which is covered on a rear part of the top of each upright partition plate and affixed thereto with a screw.
Abstract:
Cellulose ethers are described herein which are useful in capsules or in coatings for dosage forms. In these cellulose ethers the ether substituents are methyl groups, hydroxyalkyl groups, and optionally alkyl groups being different from methyl, the cellulose ether has an MS (hydroxyalkyl) of 0.05 to 1.00, and hydroxy groups of anhydroglucose units are substituted with methyl groups such that [s23/s26−0.2*MS(hydroxyalkyl)] is 0.35 or less, wherein s23 is the molar fraction of anhydroglucose units wherein only the two hydroxy groups in the 2- and 3-positions of the anhydroglucose unit are substituted with methyl groups and wherein s26 is the molar fraction of anhydroglucose units wherein only the two hydroxy groups in the 2- and 6-positions of the anhydroglucose unit are substituted with methyl groups.
Abstract:
Systems and methods related to single molecule switching devices are disclosed. One example method can include the step of applying a tunneling current across a tunneling junction. The tunneling junction can include an endohedral fullerene that includes a fullerene cage and a trapped cluster or a trapped atom. Such a method can also include exciting one or more internal motions of the trapped cluster or the trapped atom based at least in part on the tunneling current, and changing the conductance of the endohedral fullerene based at least in part on the one or more excited internal motions. One or more electronic processes can be controlled based at least in part on the changed conductance of the endohedral fullerene.
Abstract:
The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).
Abstract:
The invention relates to a polar group functionalized copolymer useful to prepare a nanocomposite polymer and to the nanocomposite polymer, wherein the polar group functionalized copolymer useful to prepare a nanocomposite polymer and the nanocomposite polymer are as defined in the specification.
Abstract:
Ghrelin O-acyltransferase (GOAT) is inhibited with designed small molecules. Methods comprise contacting the GOAT with an inhibitor and detecting a resultant inhibition.
Abstract:
The functional fluids of the present invention comprise about 50 parts by weight to about 99 parts by weight of a glycol component and about 0.3 parts by weight to about 10 parts by weight of one or more additives including a phosphate content. Desirably, in one aspect of this invention, the functional fluid composition exhibits an average scar width according to ASTM D 2670 (100 lb break-in for 1 min, 200 lb load for 30 minutes) that ranges from about 0.05 mm to about 0.45 mm, an average tooth count according to ASTM D 2670 (100 lb break-in for 1 min, 200 lb load for 30 minutes) of less than about 15, or both.
Abstract translation:本发明的功能性流体包含约50重量份至约99重量份的二醇组分和约0.3重量份至约10重量份的一种或多种包括磷酸盐含量的添加剂。 理想地,在本发明的一个方面,功能性流体组合物根据ASTM D 2670(100磅断裂1分钟,200磅载荷30分钟)显示平均瘢痕宽度,其范围为约0.05mm至约0.45mm ,根据ASTM D 2670(100磅断裂1分钟,200分钟负荷30分钟)的平均齿数小于约15,或两者均匀。
Abstract:
The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include forming one or more layers of material within an opening in a substrate, the opening and the one or more layers forming at least a portion of an isolation structure, and subjecting at least one of the one or more layers to an energy beam treatment, the energy beam treatment configured to change a stress of the one or more layers subjected thereto, and thus change a stress in the substrate.
Abstract:
Quinolone carboxylic acid derivatives of formula (I) wherein Ar is an optionally substituted phenyl, pyridyl, or pyrimidinyl group and the substituent groups R1, R4, R10, R11, R19, and R20 are as defined in the specification, pharmaceutical compositions containing them, and methods of using them in treatment of hyperproliferative diseases such as cancer are disclosed and claimed.