公开(公告)号：US20240274415A1

公开(公告)日：2024-08-15

申请号：US18641475

申请日：2024-04-22

Applicant: Tokyo Electron Limited

Inventor： Masahiro YAMAZAKI

IPC: H01J37/32 ,  B08B5/00 ,  B08B7/00 ,  B08B9/08 ,  H01L21/67

CPC classification number: H01J37/32862 ,  B08B5/00 ,  B08B9/08 ,  H01J37/3244 ,  H01L21/67069 ,  B08B7/0057 ,  H01J2237/335

Abstract: A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.

公开(公告)号：US12027350B2

公开(公告)日：2024-07-02

申请号：US17004432

申请日：2020-08-27

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jing-Cheng Liao ,  Chang-Ming Wu ,  Lee-Chuan Tseng

IPC: H01L21/02 ,  C23C16/44 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/683

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  H01J37/3244 ,  H01L21/02271 ,  H01L21/3065 ,  H01L21/32136 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/6831

Abstract: In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing chamber that has a by-product disposed along sidewalls of the processing chamber. A plasma is generated from the processing gas using a radio frequency signal. A lower electrode is connected to a first electric potential. Concurrently, a bias voltage having a second electric potential is applied to a sidewall electrode to induce ion bombardment of the by-product, in which the second electric potential has a larger magnitude than the first electric potential. The processing gas is evacuated from the processing chamber.

公开(公告)号：US20240203741A1

公开(公告)日：2024-06-20

申请号：US18388043

申请日：2023-11-08

Applicant: Applied Materials, Inc.

Inventor： Nicolas Louis BREIL ,  Avgerinos V. GELATOS

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/40

CPC classification number: H01L21/28518 ,  H01L21/02068 ,  H01L21/3065 ,  H01L29/401 ,  H01J37/32357 ,  H01J2237/334 ,  H01J2237/335

Abstract: A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and a p-type MOS (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and a p-MOS cavity in an exposed surface of the p-MOS region, and performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.

公开(公告)号：US20240030022A1

公开(公告)日：2024-01-25

申请号：US18265234

申请日：2021-12-24

Applicant: JUSUNG ENGINEERING CO., LTD.

Inventor： Ji Hoon KIM

IPC: H01L21/02 ,  H01J37/32 ,  B08B7/00

CPC classification number: H01L21/02049 ,  H01J37/32449 ,  B08B7/0035 ,  H01J2237/335

Abstract: The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for removing an oxide film formed on a substrate. In accordance with an exemplary embodiment, a substrate processing method that processes a substrate loaded into a chamber, includes: supplying a nitrogen-containing gas to an inner space of a plasma generator disposed outside the chamber; activating the nitrogen-containing gas in the inner space; supplying a hydrogen-containing gas to the inner space; and supplying the nitrogen-containing gas activated in the inner space and the hydrogen-containing gas onto the substrate.

公开(公告)号：US20240027894A1

公开(公告)日：2024-01-25

申请号：US18370190

申请日：2023-09-19

Applicant: Applied Materials, Inc.

Inventor： Banqiu WU ,  Khalid MAKHAMREH ,  Eliyahu Shlomo DAGAN

IPC: G03F1/82 ,  H01J37/32 ,  B08B7/00 ,  B08B13/00

CPC classification number: G03F1/82 ,  H01J37/32825 ,  H01J37/3244 ,  H01J37/3299 ,  H01J37/32972 ,  B08B7/0035 ,  B08B13/00 ,  H01J37/32082 ,  H01J2237/335 ,  H01J2237/0206

Abstract: Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.

公开(公告)号：US20230402268A1

公开(公告)日：2023-12-14

申请号：US17836657

申请日：2022-06-09

Applicant: Applied Materials, Inc.

Inventor： Songjae LEE ,  Masato ISHII ,  Martin TRUEMPER ,  Richard O. COLLINS ,  Martin Jeffrey SALINAS ,  Yong ZHENG ,  Anita ZHAO ,  Adele MARIADASS ,  Christophe MARCADAL ,  Henry BARANDICA ,  Ernesto J. ULLOA

IPC: H01J37/32 ,  C23C14/02 ,  B08B7/00 ,  B08B13/00

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32357 ,  H01J37/32899 ,  C23C14/022 ,  B08B7/0035 ,  B08B13/00 ,  H01J37/32825 ,  H01J2237/335 ,  H01J2237/186 ,  H01J2237/182

Abstract: A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.

公开(公告)号：US20230369031A1

公开(公告)日：2023-11-16

申请号：US18127213

申请日：2023-03-28

Applicant: Applied Materials, Inc.

Inventor： Tomohiko Kitajima ,  Ning Li ,  Chang Seok Kang ,  Naomi Yoshida

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  C23C16/02 ,  C23C16/56 ,  C23C16/34 ,  C23C16/36 ,  C23C16/38

CPC classification number: H01J37/32899 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/67167 ,  C23C16/0227 ,  C23C16/56 ,  C23C16/345 ,  C23C16/36 ,  C23C16/38 ,  C23C16/342 ,  H01J2237/335 ,  H01J2237/332 ,  H01J2237/336 ,  H01J37/32816 ,  H01J2237/20278

Abstract: Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.

公开(公告)号：US20230290618A1

公开(公告)日：2023-09-14

申请号：US18179424

申请日：2023-03-07

Applicant: Tokyo Electron Limited

Inventor： Naoki KUBOTA

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32183 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/335

Abstract: A substrate processing apparatus for processing a substrate by causing ions in plasma to act on the substrate, includes: a process container in which the substrate to be processed is accommodated, the process container configured to generate the plasma in an interior of the process container; a stage provided inside the process container and configured to place the substrate on the stage; a radio-frequency power source configured to apply radio-frequency power to the stage to cause the ions in the plasma to act on the substrate; a shield member provided inside the process container and having a driven portion; a drive mechanism configured to drive the driven portion of the shield member; and at least one flexible conductive connection plate configured to connect the driven portion of the shield member and a grounded portion and configured to be deformed in response to the driving of the driven portion.

公开(公告)号：US11721542B2

公开(公告)日：2023-08-08

申请号：US17101077

申请日：2020-11-23

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Yu Lei ,  Dien-Yeh Wu ,  Jallepally Ravi

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  B08B7/00 ,  H01L21/768

CPC classification number: H01L21/02068 ,  B08B7/0035 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32926 ,  H01L21/67028 ,  H01J2237/335 ,  H01L21/76879

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

公开(公告)号：US20230223239A1

公开(公告)日：2023-07-13

申请号：US18008642

申请日：2021-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoru KAWAKAMI

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/02 ,  B08B7/00

CPC classification number: H01J37/32495 ,  H01J37/32834 ,  H01J37/32568 ,  H01J37/32183 ,  H01L21/6833 ,  H01L21/02087 ,  B08B7/0035 ,  H01J2237/335 ,  H01J2237/038

Abstract: A plasma processing apparatus for cleaning a peripheral portion of a substrate by plasma and comprising a depressurizable processing container accommodating a substrate is disclosed. The processing container includes a substrate support for supporting a substrate and including a central electrode facing a central portion of the supported substrate supported by the substrate support; a lower ring electrode formed in a ring shape to face a lower surface of a peripheral portion of the substrate supported by the substrate support; and an upper ring electrode disposed to face an upper surface of the peripheral portion of the substrate supported by the substrate support. The central electrode is grounded, a radio frequency (RF) power is supplied to each of the upper and lower ring electrodes, and the RF power is supplied to at least one of the upper and lower ring electrodes via a phase adjuster configured to adjust the phase of the RF power.