公开(公告)号：US5824953A

公开(公告)日：1998-10-20

申请号：US708682

申请日：1996-09-05

Applicant: Seok-Kil Han ,  Kwang-Yong Kang ,  Je-Ha Kim

Inventor： Seok-Kil Han ,  Kwang-Yong Kang ,  Je-Ha Kim

IPC: H01R9/05 ,  G01R1/20 ,  H01R43/00 ,  H05K9/00

CPC classification number: G01R1/20

Abstract: A coaxial connector for microwave and millimeter wave measurement can be used by attachment to a vacuum chamber for instrumentation when measuring a high frequency characteristic for various electronic devices at low temperature. The coaxial connector connects microwave instrumenting equipment to a device to be tested within vacuum chamber (e.g., so as to measure a low temperature and high frequency characteristic for a high frequency device). It includes a support plate for attachment to the vacuum chamber and a support screw to prevent the coaxial connector from rotating. The support screw is of hexagonal shape in the exemplary embodiment and is arranged to one side on the center of the support plate. A coaxial cable transmits the measured signal and is extended to pass through the center of the support plate and support screw, and a V-shape connector on each end of the cable for respectively coupling between a fixed sample stand in the vacuum chamber and the microwave instrument equipment.

Abstract translation: 用于微波和毫米波测量的同轴连接器可以在测量低温各种电子设备的高频特性时通过连接到用于仪器的真空室来使用。 同轴连接器将微波仪器设备连接到真空室内要测试的设备（例如，测量高频设备的低温和高频特性）。 它包括用于附接到真空室的支撑板和用于防止同轴连接器旋转的支撑螺钉。 在示例性实施例中，支撑螺钉为六角形，并且布置在支撑板的中心的一侧。 同轴电缆传输测量信号并延伸穿过支撑板和支撑螺钉的中心，以及电缆每端的V形连接器，用于分别耦合在真空室中的固定样品台和微波 仪器设备。

公开(公告)号：US08305221B2

公开(公告)日：2012-11-06

申请号：US12303000

申请日：2007-05-30

Applicant: Hyun-Tak Kim ,  Bong-Jun Kim ,  Byung-Gyu Chae ,  Sun-Jin Yun ,  Sung-Youl Choi ,  Yong-Wook Lee ,  JungWook Lim ,  Sang-Kuk Choi ,  Kwang-Yong Kang

Inventor： Hyun-Tak Kim ,  Bong-Jun Kim ,  Byung-Gyu Chae ,  Sun-Jin Yun ,  Sung-Youl Choi ,  Yong-Wook Lee ,  JungWook Lim ,  Sang-Kuk Choi ,  Kwang-Yong Kang

IPC: G08B17/00

CPC classification number: H01L49/003 ,  G01K3/005

Abstract: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor. The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.

Abstract translation: 提供了具有可变MIT温度或电压的突发MIT装置，使用突发MIT装置的MIT传感器以及包括MIT传感器的报警装置和二次电池防爆电路。 MIT装置包括在转变温度或转变电压下经历突变MIT的突变MIT层和与突变MIT层接触的至少两个电极层。 转变温度或转变电压随着包括施加在电极层上的电压，温度，电磁波，压力和影响突发MIT层的气体浓度的因素中的至少一个而变化。 MIT传感器是温度传感器，红外传感器，图像传感器，压力传感器，气体浓度传感器或开关。 报警装置包括MIT传感器和与MIT传感器串联连接的报警信号单元。 二次电池防爆电路包括二次电池，MIT传感器附接到二次电池以感测二次电池的温度，从而防止二次电池的可能的爆炸，以及由二次电池供电的保护电路体 。

公开(公告)号：US20120112230A1

公开(公告)日：2012-05-10

申请号：US13292045

申请日：2011-11-08

Applicant: Dong Suk JUN ,  Kwang-Yong KANG ,  Sungil KIM ,  Mun Cheol PAEK ,  Han-Cheol RYU ,  Min Hwan KWAK ,  Seung beom KANG

Inventor： Dong Suk JUN ,  Kwang-Yong KANG ,  Sungil KIM ,  Mun Cheol PAEK ,  Han-Cheol RYU ,  Min Hwan KWAK ,  Seung beom KANG

IPC: H01L33/58 ,  H01L33/30

CPC classification number: H01Q19/062 ,  G01J3/10 ,  G01J3/42 ,  H01Q9/285 ,  H01Q15/0086 ,  H01Q15/08

Abstract: The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.

Abstract translation: 本发明的示例性实施例包括在基板的前表面上形成感光体薄膜; 通过图案化感光体薄膜形成感光体薄膜图案; 并在感光体薄膜图案上形成金属电极。

公开(公告)号：US20120097958A1

公开(公告)日：2012-04-26

申请号：US13244078

申请日：2011-09-23

Applicant: Yoon Ho SONG ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

Inventor： Yoon Ho SONG ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

IPC: H01L27/088 ,  H01L33/36 ,  H01L29/786

CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/319

Abstract: A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal, a gate receiving a data signal, and a drain connected to the field emitter. The field emitter is made of carbon material such as diamond, diamond like carbon, carbon nanotube or carbon nanofiber. The cathode may include multiple field emitters, and the TFT may include multiple transistors having gates to which the same signal is applied, sources to which the same signal is applied, and drains respectively connected to the field emitters. An active layer of the TFT is made of a semiconductor film such as amorphous silicon, micro-crystalline silicon, polycrystalline silicon, wide-band gap material like ZnO, or an organic semiconductor.

Abstract translation: 场发射像素包括其上形成有发射电子的场致发射体的阴极，形成从场致发射体吸收电子的荧光体的阳极以及响应于电流源的源极的薄膜晶体管（TFT） 扫描信号，接收数据信号的栅极和连接到场发射器的漏极。 场发射体由诸如金刚石，类金刚石碳，碳纳米管或碳​​纳米纤维的碳材料制成。 阴极可以包括多个场发射器，并且TFT可以包括多个晶体管，其具有施加相同信号的栅极，施加相同信号的源极以及分别连接到场发射极的漏极。 TFT的有源层由诸如非晶硅，微晶硅，多晶硅，宽带隙材料如ZnO的半导体膜或有机半导体制成。

公开(公告)号：US08017268B2

公开(公告)日：2011-09-13

申请号：US11813898

申请日：2006-01-12

Applicant: Hyun-Tak Kim ,  Doo-Hyeb Youn ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Jung-Wook Lim ,  Gyung-Ock Kim ,  Sung-Lyul Maeng

Inventor： Hyun-Tak Kim ,  Doo-Hyeb Youn ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Jung-Wook Lim ,  Gyung-Ock Kim ,  Sung-Lyul Maeng

IPC: H01M4/02 ,  H01M4/13

CPC classification number: H01M2/34 ,  H01M2/348 ,  H01M10/052 ,  H01M10/443 ,  H01M2200/00 ,  H01M2200/106

Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.

Abstract translation: 提供一种锂二次电池，其包括能够延迟或防止电池爆炸的放电单元。 锂二次电池包括与电池体平行设置的放电单元。 放电单元包括连接到电池体的正极的第一电极，连接到电池体的负极的第二电极和设置在第一电极和第二电极之间的放电材料膜，引起突然的放电 高于预定温度。 放电材料膜，例如突然的金属 - 绝缘体转变（MIT）材料膜可以引起突然的放电，从而防止或延迟电池爆炸。

公开(公告)号：US07791924B2

公开(公告)日：2010-09-07

申请号：US11994224

申请日：2006-06-29

Applicant: Hyun-Tak Kim ,  Bong-Jun Kim ,  Kwang-Yong Kang ,  Sun-Jin Yun ,  Yong-Wook Lee ,  Byung-Gyu Chae

Inventor： Hyun-Tak Kim ,  Bong-Jun Kim ,  Kwang-Yong Kang ,  Sun-Jin Yun ,  Yong-Wook Lee ,  Byung-Gyu Chae

IPC: H01L45/00 ,  G11C11/00

CPC classification number: H01L27/10 ,  B82Y10/00 ,  G11C13/0007 ,  G11C13/0014 ,  G11C2213/32 ,  G11C2213/51 ,  H01L29/8615 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/148

Abstract: Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.

Abstract translation: 提供了不经历结构相变，保持均匀的薄膜并且可以执行高速切换操作的存储器件及其操作方法。 存储器件包括衬底，突变MIT材料层和多个电极。 突变的MIT材料层设置在衬底上，并经过电子之间的能量变化而突然的金属 - 绝缘体转变。 多个电极与突然的MIT材料层接触并通过热熔化以在突变的MIT材料层上形成导电路径。

公开(公告)号：US20100134936A1

公开(公告)日：2010-06-03

申请号：US11816732

申请日：2006-02-17

Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-jun Kim ,  Sun-jin Yun ,  Yong-wook Lee ,  Gyung-Ock Kim ,  Doo-Hyeb Youn ,  Jung-Wook Lim

Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-jun Kim ,  Sun-jin Yun ,  Yong-wook Lee ,  Gyung-Ock Kim ,  Doo-Hyeb Youn ,  Jung-Wook Lim

IPC: H02H9/04 ,  H02H9/00

CPC classification number: H01L49/003 ,  H01L27/0248

Abstract: Provided are an electrical and/or electronic system protecting circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove high-frequency noise with a voltage greater than a rated standard voltage received via a power line or a signal line of an electrical and/or electronic system, and the electrical and/or electronic system including the electrical and/or electronic system protecting circuit. The abrupt MIT device of the electrical and/or electronic system protecting circuit abrupt is connected in parallel to the electrical and/or electronic system to be protected from the noise. The electrical and/or electronic system protecting circuit bypasses toward the abrupt MIT device most of the noise current generated when the voltage greater than the rated standard voltage is applied, thereby protecting the electrical and/or electronic system.

Abstract translation: 提供了使用突变金属 - 绝缘体转变（MIT）装置的电和/或电子系统保护电路，其可以以大于经由电力线或信号线接收的额定标准电压的电压有效地去除高频噪声 电气和/或电子系统，以及包括电气和/或电子系统保护电路的电气和/或电子系统。 电气和/或电子系统保护电路突然的MIT设备突然连接到电气和/或电子系统以防止噪声。 当施加大于额定标准电压的电压时，电气和/或电子系统保护电路绕过突然的MIT设备，大部分噪声电流产生，从而保护电气和/或电子系统。

公开(公告)号：US20100092183A1

公开(公告)日：2010-04-15

申请号：US12495640

申请日：2009-06-30

Applicant: Sungil Kim ,  Kwang Yong Kang ,  Mun Cheol Paek ,  Sang Kuk Choi ,  Min Hwan Kwak ,  Han Cheol Ryu

Inventor： Sungil Kim ,  Kwang Yong Kang ,  Mun Cheol Paek ,  Sang Kuk Choi ,  Min Hwan Kwak ,  Han Cheol Ryu

IPC: H04B10/04

CPC classification number: H04B10/2575 ,  H04B2210/006

Abstract: A frequency tunable terahertz continuous wave generator controls the number of feedbacks of an optical signal output from an optical intensity modulator by adding a feedback loop between input and output terminals of the optical intensity modulator, thereby simply tuning a frequency of a terahertz continuous wave.

Abstract translation: 频率可调太赫兹连续波发生器通过在光强度调制器的输入和输出端之间加上反馈回路来控制从光强调制器输出的光信号的反馈数，从而简单地调谐太赫兹连续波的频率。

公开(公告)号：US20090315724A1

公开(公告)日：2009-12-24

申请号：US12303000

申请日：2007-05-30

Applicant: Hyun-Tak Kim ,  Bong-Jun Kim ,  Byung-Gyu Chae ,  Sun-Jin Yun ,  Sung-Youl Choi ,  Yong-Wook Lee ,  JungWook Lim ,  Sang-Kuk Choi ,  Kwang-Yong Kang

Inventor： Hyun-Tak Kim ,  Bong-Jun Kim ,  Byung-Gyu Chae ,  Sun-Jin Yun ,  Sung-Youl Choi ,  Yong-Wook Lee ,  JungWook Lim ,  Sang-Kuk Choi ,  Kwang-Yong Kang

IPC: G08B17/00 ,  H01L29/78 ,  G01N27/04 ,  H01M2/00

CPC classification number: H01L49/003 ,  G01K3/005

Abstract: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.

Abstract translation: 提供了具有可变MIT温度或电压的突变MIT装置，使用突发MIT装置的MIT传感器，以及包括MIT传感器的报警装置和二次电池防爆电路.MIT装置包括经历突发MIT的突发MIT层 在转变温度或过渡电压下，以及与突变MIT层接触的至少两个电极层。 转变温度或转变电压随着包括施加在电极层上的电压，温度，电磁波，压力和影响突发MIT层的气体浓度的因素中的至少一个而变化。 MIT传感器是温度传感器，红外传感器，图像传感器，压力传感器，气体浓度传感器或开关。 报警装置包括MIT传感器和与MIT传感器串联连接的报警信号单元。 二次电池防爆电路包括二次电池，MIT传感器附接到二次电池以感测二次电池的温度，从而防止二次电池的可能的爆炸，以及由二次电池供电的保护电路体 。

公开(公告)号：US20090230428A1

公开(公告)日：2009-09-17

申请号：US11721069

申请日：2005-12-05

Applicant: Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

Inventor： Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L49/003 ,  H01L29/452

Abstract: The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.

Abstract translation: 突变金属 - 绝缘体转换装置包括：突然的金属绝缘体过渡材料层，其包括小于或等于2eV的能隙和孔内的孔; 并且两个电极接触突变的金属 - 绝缘体转移材料层。 这里，两个电极中的每一个通过热处理形成在突变金属 - 绝缘体转移材料层上并包含Ni或Cr的第一层的叠层形成，第二层形成在第一层上并包括In的第三层，第三层 形成在第二层上并且包含Mo或W，以及形成在第三层上并包含Au的第四层。