公开(公告)号：US11515447B2

公开(公告)日：2022-11-29

申请号：US17027685

申请日：2020-09-21

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang Chen ,  Shih-Wei Yang

IPC: H01L33/14 ,  H01L33/46 ,  H01L33/52 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00

Abstract: The flip-chip light emitting diode structure includes a substrate, a first patterned current blocking layer, a second patterned current blocking layer, a first semiconductor layer, an active layer and a second semiconductor layer. The first patterned current blocking layer is disposed on the substrate. The second patterned current blocking layer is disposed on the first patterned current blocking layer, in which the first patterned current blocking layer and the second patterned current blocking layer are located on different planes, and patterns of the first patterned current blocking layer and patterns of the second current blocking layer are substantially complementary. The first semiconductor layer is disposed on the second patterned current blocking layer. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer, in which electrical properties of the second semiconductor layer and the first semiconductor layer are different.

公开(公告)号：US11489089B2

公开(公告)日：2022-11-01

申请号：US16907143

申请日：2020-06-19

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi Kuo ,  Jian-Chin Liang ,  Chien-Nan Yeh

IPC: H01L33/08 ,  H01L33/42 ,  H01L33/22 ,  H01L33/62

Abstract: A light emitting device includes a first light emitting cell and a second light emitting cell. Each light emitting cell includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers. The second semiconductor layer of the second light emitting cell has an exposed surface. A transparent bonding layer is located between the first and second light emitting cells. A hole is formed on the first and second light emitting cells and the transparent bonding layer. A first route metal is located on a sidewall of the hole and electrically coupled to the second semiconductor layer of the first light emitting cell and the first semiconductor layer of the second light emitting cell. The active layer of the second light emitting cell has an area greater than the active layer of the first light emitting cell.

公开(公告)号：US20220254955A1

公开(公告)日：2022-08-11

申请号：US17578480

申请日：2022-01-19

Applicant: Lextar Electronics Corporation

Inventor： Cheng-Yu CHIEN ,  Hou-Jun WU ,  Chun-I WU

IPC: H01L33/10

Abstract: A light emitting diode structure includes a metal reflective layer, a first transparent electrically-conductive layer, a dielectric layer, second transparent electrically-conductive layers, a first type semiconductor layer, an active layer and a second type semiconductor layer. The metal reflective layer has first concave sections. The first transparent electrically-conductive layer is conformally formed over the first concave sections of the metal reflective layer. The dielectric layer is formed over the first transparent electrically-conductive layer and has through holes to expose the first transparent electrically-conductive layer. The second transparent electrically-conductive layers are formed over the dielectric layer, and connected with the first transparent electrically-conductive layer via the through holes. Each second transparent electrically-conductive layer is connected to the first transparent electrically-conductive layer to form a T-shaped cross section in each first concave section.

公开(公告)号：US11387388B2

公开(公告)日：2022-07-12

申请号：US16744115

申请日：2020-01-15

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi Kuo

IPC: H01L33/40 ,  H01L33/10

Abstract: A light-emitting diode structure includes a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a reflective layer, and an ohmic contact layer. The light-emitting layer is disposed under the first type semiconductor layer. The second type semiconductor layer is disposed under the light-emitting layer, wherein the second type semiconductor layer includes a plurality of recesses which are recessed from a lower surface of the second type semiconductor layer toward the light-emitting layer. The reflective layer is disposed in the recesses. The ohmic contact layer is disposed under the lower surface of the second type semiconductor layer and surrounds the recesses. The light-emitting diode structure can increase the luminous efficiency greatly.

公开(公告)号：US20220190225A1

公开(公告)日：2022-06-16

申请号：US17653462

申请日：2022-03-03

Applicant: Lextar Electronics Corporation

Inventor： Chih-Hao LIN ,  Jo-Hsiang CHEN ,  Shih-Lun LAI ,  Min-Che TSAI ,  Jian-Chin LIANG

IPC: H01L33/62 ,  H01L33/58 ,  H01L33/00

Abstract: A method for manufacturing a light emitting diode packaging structure includes the operations below. A flexible substrate having a first surface and a second surface is provided. A carrier substrate is formed on the first surface. An adhesive layer is formed on the second surface. A micro light emitting element is formed on the adhesive layer. The micro light emitting element has a conductive pad thereon opposite to the adhesive layer. A redistribution layer is formed and covers the micro light emitting element and the adhesive layer, wherein the redistribution layer includes a circuit layer electrically connecting to the conductive pad and an insulating layer covering the circuit layer. An electrode pad is formed on the redistribution layer and electrically connected to the circuit layer, wherein a total thickness of the flexible substrate, the adhesive layer, the redistribution layer, and the electrode pad is less than 200 um.

公开(公告)号：US20220137280A1

公开(公告)日：2022-05-05

申请号：US17448351

申请日：2021-09-21

Applicant: Lextar Electronics Corporation

Inventor： Lung-Kuan LAI ,  Jian-Chin LIANG

IPC: F21V8/00

Abstract: The present disclosure proposes a light-emitting device and a backlight module thereof. The light-emitting elements includes a substrate, a plurality of light-emitting elements, a light guide layer, a plurality of first light adjustment patterns, and a plurality of second light adjustment patterns. The light-emitting elements are disposed on the substrate. The light guide layer covers the substrate and the light-emitting elements. The first light adjustment patterns are disposed over or embedded within the light guide layer, and each of the first light adjustment patterns is located above each of the light-emitting elements, respectively. The second light adjustment patterns are disposed on or embedded in the light guide layer, and the second light adjustment patterns surround the corresponding first light adjustment patterns, respectively. The first light adjustment patterns and second light adjustment patterns have a refractive index smaller than that of the light guide layer.

公开(公告)号：US20220093578A1

公开(公告)日：2022-03-24

申请号：US17313023

申请日：2021-05-06

Applicant: Lextar Electronics Corporation

Inventor： Chih-Hao LIN ,  Jian-Chin LIANG ,  Chien-Nan YEH ,  Shih-Lun LAI ,  Jo-Hsiang CHEN

IPC: H01L25/16 ,  H01L23/00 ,  H01L33/60

Abstract: Disclosed is a light-emitting array structure having a substrate, a plurality of light-emitting pixel units, a plurality of first and second signal wires, and an encapsulating layer. The light-emitting pixel units are arranged in array on the substrate. Each light-emitting pixel unit includes a driving chip, a first flat layer, a first redistribution layer, a second flat layer, a second redistribution layer, and a light-emitting diode. Each first signal wire is electrically connected to a corresponding one of the first redistribution layers and extends in a first direction. The second signal wires extend in a level different from the first signal wires. Each second signal wire is electrically connected to a corresponding one of the second redistribution layers and extends in a second direction different from the first direction. The encapsulating layer covers the light-emitting pixel units, the first and second signal wires, and the substrate.

公开(公告)号：US20220029067A1

公开(公告)日：2022-01-27

申请号：US17083329

申请日：2020-10-29

Applicant: Lextar Electronics Corporation

Inventor： Yi-Ting TSAI ,  Hung-Chia WANG ,  Chia-Chun HSIEH ,  Hung-Chun TONG ,  Yu-Chun LEE ,  Tzong-Liang TSAI

IPC: H01L33/50

Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.

公开(公告)号：US20210398841A1

公开(公告)日：2021-12-23

申请号：US17344924

申请日：2021-06-10

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Guo-Yi SHIU

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/22 ,  H01L33/62

Abstract: A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer and a pick-up layer. The first type semiconductor layer and the second type semiconductor layer are located on two opposite sides of the active layer respectively. The pick-up layer is located on the second type semiconductor layer, wherein the pick-up layer has a patterned outer surface to serve as a grabbed surface during transferring.

公开(公告)号：US20210288227A1

公开(公告)日：2021-09-16

申请号：US17033699

申请日：2020-09-26

Applicant: Lextar Electronics Corporation

Inventor： Yi-Ting TSAI ,  Hung-Chia WANG ,  Chia-Chun HSIEH ,  Hung-Chun TONG ,  Yu-Chun LEE ,  Tzong-Liang TSAI

IPC: H01L33/50 ,  H01L33/18

Abstract: The wavelength conversion material includes a general formula (I) MmAaBbCcDdEe:ESxREy and satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements O, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.