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    Semiconductor interlayer dielectric material and a semiconductor device using the same
    23.
    发明申请
    Semiconductor interlayer dielectric material and a semiconductor device using the same 有权
    半导体层间绝缘材料和使用其的半导体器件

    公开(公告)号：US20070173074A1

    公开(公告)日：2007-07-26

    申请号：US11639318

    申请日：2006-12-15

    Applicant: Min-Jin Ko ,  Hye-Yeong Nam ,  Jung-Won Kang ,  Myung-Sun Moon ,  Dong-Seok Shin

    Inventor： Min-Jin Ko ,  Hye-Yeong Nam ,  Jung-Won Kang ,  Myung-Sun Moon ,  Dong-Seok Shin

    IPC: H01L21/469

    CPC classification number: H01L21/3122 ,  C08G77/50 ,  C08G77/52 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  Y10T428/31663

    Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention also provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b), wherein component (a) is an organosilane of the formula R1mR2nSiX4-m-n (where each of R1 and R2 which may be the same or different, is a non-hydrolysable group; X is a hydrolysable group; and m and n are integers of from 0 to 3 satisfying 0≦m+n≦3) and/or a partially hydrolyzed condensate thereof and wherein component (b) is an organic bridged silane of the formula R3pY3-pSi-M-SiR4qZ3-q (where each of R3 and R4 which may be the same or different, is a non-hydrolysable group; each of Y and Z which may be the same or different, is a hydrolysable group; and p and q are integers of from 0 to 2) and/or a cyclic oligomer with organic bridge unit (Si-M-Si).

    Abstract translation: 本发明涉及低密度和高性能的下一代半导体所必需的低介电材料，更具体地涉及一种热稳定且具有良好的成膜性能和优异的机械性能的低介电材料，包括 低电介质材料和使用电介质膜制造的半导体器件。 本发明还提供一种在组分（a）和组分（b）的树脂组合物制备的网络中具有柔性有机桥连单元的有机硅酸盐聚合物，其中组分（a）是式R a的有机硅烷 （1）其中每个R 1和R 2各自独立地选自氢， 1可以相同或不同的是不可水解基团; X是可水解基团; m和n是0-3的整数，满足0 < = m + n <= 3）和/或部分水解的缩合物，其中组分（b）是式R 3的有机桥连硅烷 > 3-p Si-M-SiR 4 Z 3-q（其中R 3， 可以相同或不同的R 4和R 4是不可水解基团; Y和Z可以相同或不同，为可水解基团; p和q 为0〜2的整数）和/或具有有机bri的环状低聚物 单位（Si-M-Si）。

    Cobalt-based alloy electroless planting solution and electroless plating method using the same
    24.
    发明申请
    Cobalt-based alloy electroless planting solution and electroless plating method using the same 有权
    钴基合金无电解种植液及使用其的化学镀方法

    公开(公告)号：US20070160857A1

    公开(公告)日：2007-07-12

    申请号：US11647283

    申请日：2006-12-29

    Applicant: Sang-chul Lee ,  Min-kyoun Kim ,  Min-jin Ko

    Inventor： Sang-chul Lee ,  Min-kyoun Kim ,  Min-jin Ko

    IPC: B05D3/04 ,  C22C19/07 ,  B05D1/18 ,  B32B15/00

    CPC classification number: C23C18/1834 ,  C23C18/34 ,  C23C18/50 ,  Y10T428/31678

    Abstract: The present invention provides a cobalt-based alloy electroless plating solution comprising a cobalt precursor, a tungsten precursor, a phosphorus precursor, a reducing agent, a complexing agent, a pH regulator and a stabilizer, in which the reducing agent is dimethylamine borane (DMAB) or borohydride and the stabilizer is one or more compounds selected from a group consisting of imidazole, thiazole, triazole, disulfide and their derivatives; and an electroless plating method using the cobalt-based alloy electroless plating solution, as well as a thin film prepared by the same. According to the present invention, the cobalt-based alloy electroless plating solution is stable enough for long-term reuse and prevents deterioration of metal thin-film quality by inhibiting the formation of a precipitate. The present invention further provides an electroless plating method using the cobalt-based alloy electroless plating solution, and a cobalt-based alloy thin film prepared by the same.

    Abstract translation: 本发明提供了一种钴基合金无电解镀液，其包含钴前体，钨前体，磷前体，还原剂，络合剂，pH调节剂和稳定剂，其中还原剂是二甲胺硼烷（DMAB ）或硼氢化物，稳定剂是一种或多种选自咪唑，噻唑，三唑，二硫化物及其衍生物的化合物; 以及使用该钴基合金化学镀溶液的无电镀方法，以及使用其制备的薄膜。 根据本发明，钴基合金化学镀溶液的稳定性足以长期重复利用，并且通过抑制沉淀物的形成来防止金属薄膜质量的劣化。 本发明还提供了一种使用钴基合金化学镀溶液的化学镀方法和由其制备的钴基合金薄膜。

    Organic silicate polymer and insulation film comprising the same
    25.
    发明申请
    Organic silicate polymer and insulation film comprising the same 审中-公开
    有机硅酸盐聚合物和包含其的绝缘膜

    公开(公告)号：US20060127587A1

    公开(公告)日：2006-06-15

    申请号：US10516494

    申请日：2003-06-27

    Applicant: Jung-won Kang ,  Myung-Sun Moon ,  Min-Jin Ko ,  Gwi-Gwon Kang ,  Dong-Seok Shin ,  Hye-Yeong Nam ,  Young-Duk Kim ,  Bum-Gyu Choi ,  Byung-Ro Kim ,  Sang-Min Park

    Inventor： Jung-won Kang ,  Myung-Sun Moon ,  Min-Jin Ko ,  Gwi-Gwon Kang ,  Dong-Seok Shin ,  Hye-Yeong Nam ,  Young-Duk Kim ,  Bum-Gyu Choi ,  Byung-Ro Kim ,  Sang-Min Park

    IPC: B05D3/02 ,  C08G77/60 ,  C07F7/18

    CPC classification number: H01L21/3121 ,  C08G77/48 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    Abstract: The present invention relates to a composition for forming a low dielectric insulating film for a semiconductor device, particularly to an organosilicate polymer prepared by mixing a thermally decomposable organic silane compound that is capped with a silane compound at both its ends, and a common silane compound or silane oligomer, and then adding water and a catalyst to conduct hydrolysis and condensation, as well as to a coating composition for an insulating film for a semiconductor device comprising the same, a coating composition for an insulating film for a semiconductor device further comprising a pore-forming organic substance, a method for preparing an insulating film for a semiconductor device by coating the composition and curing, and a semiconductor device comprising a low dielectric insulating film prepared by the method. The organosilicate polymer prepared according to the present invention has superior thermal stability and mechanical strength; an insulating film-forming composition comprising the same can be used for an interlayer insulating film for low dielectric wiring that can contribute to a high speed semiconductor, reduce power consumption, and remarkably decrease cross-talk between metal wiring; and a film obtained by applying the composition to an insulating film has superior coating properties, inhibits phase-separation, can easily control minute pores because organic substances are thermally decomposed to form pores during a curing process, and has superior insulating properties and a remarkably decreased film density.

    Abstract translation: 本发明涉及一种用于形成用于半导体器件的低介电绝缘膜的组合物，特别涉及通过将两端封装有硅烷化合物的可热分解有机硅烷化合物和普通硅烷化合物混合而制备的有机硅酸盐聚合物 或硅烷低聚物，然后加入水和催化剂进行水解和缩合，以及用于包含该组合物的半导体器件的绝缘膜用涂料组合物，用于半导体器件的绝缘膜用涂料组合物，还包含 成孔有机物质，通过涂布组合物和固化来制备用于半导体器件的绝缘膜的方法，以及包括通过该方法制备的低介电绝缘膜的半导体器件。 根据本发明制备的有机硅酸盐聚合物具有优异的热稳定性和机械强度; 可以使用包含该绝缘膜的绝缘膜形成用组合物用于低电介质布线的层间绝缘膜，其可有助于高速半导体，降低功耗，并显着降低金属布线之间的串扰; 并且通过将该组合物施加到绝缘膜上获得的膜具有优异的涂布性能，抑制相分离，可以容易地控制微孔，因为有机物质在固化过程中被热分解形成孔隙，并且具有优异的绝缘性能并显着降低 胶片密度。

    Organosilicate polymer and insulating film therefrom
    26.
    发明授权
    Organosilicate polymer and insulating film therefrom 有权
    有机硅酸酯聚合物及其绝缘膜

    公开(公告)号：US06933360B2

    公开(公告)日：2005-08-23

    申请号：US10332452

    申请日：2002-05-13

    Applicant: Min-Jin Ko ,  Bum-Gyu Choi ,  Dong-Seok Shin ,  Myung-Sun Moon ,  Jung-Won Kang ,  Hae-Young Nam ,  Young-Duk Kim ,  Gwi-Gwon Kang

    Inventor： Min-Jin Ko ,  Bum-Gyu Choi ,  Dong-Seok Shin ,  Myung-Sun Moon ,  Jung-Won Kang ,  Hae-Young Nam ,  Young-Duk Kim ,  Gwi-Gwon Kang

    IPC: C08G77/50 ,  C08G77/02 ,  H01B3/46 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  C08G77/22

    CPC classification number: H01L21/02126 ,  C08G77/50 ,  C09D183/14 ,  H01L21/02282 ,  H01L21/3121

    Abstract: The present invention relates to a low dielectric substance essential for a next generating electrical device such as a semiconductor device having high performance and high density, and particularly to a process for preparing a low dielectric organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer; a process for manufacturing an insulating film using an organosilicate polymer prepared by the process; and an electrical device comprising an insulating film prepared by the process. The organosilicate polymer prepared according the process of the present invention is thermally stable, and has good film-forming prosperities, excellent mechanical strength and crack resistance, and the film manufactured therefrom has excellent insulating properties, film uniformity, dielectric properties, crack resistance, and mechanical strength.

    Abstract translation: 本发明涉及对具有高性能和高密度的诸如半导体器件的下一个发电装置所必需的低电介质，特别涉及制备低介电有机硅酸盐聚合物的方法，碳桥接的水解缩合产物 低聚物 使用由该方法制备的有机硅酸酯聚合物制造绝缘膜的方法; 以及包括通过该方法制备的绝缘膜的电气装置。 根据本发明的方法制备的有机硅酸盐聚合物是热稳定的，并且具有良好的成膜繁荣性，优异的机械强度和抗裂性，并且由其制造的膜具有优异的绝缘性，膜均匀性，介电性能，抗裂纹性和 机械强度。

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