Photolithographic system for exposing a wafer using a programmable mask

    公开(公告)号:US20020027647A1

    公开(公告)日:2002-03-07

    申请号:US09871971

    申请日:2001-06-04

    CPC classification number: G03F7/70375 G03F7/70291

    Abstract: The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its nullopennull state) or not transmit light to the wafer (referred to as its nullclosednull state). The programmable structure can comprise or include an array of selective amplifiers. Thus, each selective amplifier is programmed to either amplify light (somewhat analogous to the nullopennull or nulltransparentnull state of a shutter) or be nullnon-amplifyingnull (its nullclosednull or nullopaquenull state). In the non-amplifying state, some portion of the incident light is transmitted through the amplifier material. The shutters and selective amplifiers can work in tandem to form a nullprogrammable layernull. A programmable technique is provided for creating a pattern to be imaged onto a wafer that can be implemented as a viable production technique. Thus, the present invention also provides a technique of making integrated circuits. A diffraction limiter can be used to provide certain advantages associated with contact lithography without requiring some of the disadvantages of contact lithography.

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