公开(公告)号：US08263487B2

公开(公告)日：2012-09-11

申请号：US12655344

申请日：2009-12-29

Applicant: Dong-ki Yoon ,  Shi-yong Yi ,  Seong-woon Choi ,  Seok-hwan Oh ,  Kwang-sub Yoon ,  Myeong-cheol Kim ,  Young-ju Park

Inventor： Dong-ki Yoon ,  Shi-yong Yi ,  Seong-woon Choi ,  Seok-hwan Oh ,  Kwang-sub Yoon ,  Myeong-cheol Kim ,  Young-ju Park

IPC: H01L21/4763

CPC classification number: H01L21/32139 ,  H01L21/0337 ,  H01L21/0338 ,  H01L27/115 ,  H01L27/11517

Abstract: A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.

Abstract translation: 通过使用含碳（C）的膜来形成半导体器件的精细图案的方法包括在包括第一和第二区域的衬底上形成蚀刻靶膜; 在所述第一区域中的所述蚀刻目标膜上形成多个第一含C膜的图案; 形成覆盖所述多个第一含C膜图案的顶表面和侧表面的缓冲层; 形成第二含C膜; 去除第二区域中的第二含C膜; 通过去除第一和第二区域中的缓冲层的一部分来暴露多个第一含C膜的图案; 并且通过使用多个第一含C膜膜图案和残留在第一区域中的第二含C膜的部分来蚀刻蚀刻目标膜作为蚀刻掩模。

公开(公告)号：US20110312183A1

公开(公告)日：2011-12-22

申请号：US13217544

申请日：2011-08-25

Applicant: Shi-Yong Yi ,  Myeong-Cheol Kim ,  Dong-Ki Yoon ,  Kyung-Yub Jeon ,  Ji-Hoon Cha

Inventor： Shi-Yong Yi ,  Myeong-Cheol Kim ,  Dong-Ki Yoon ,  Kyung-Yub Jeon ,  Ji-Hoon Cha

IPC: H01L21/306 ,  H01L21/31

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/312 ,  H01L21/32139

Abstract: For patterning during integrated circuit fabrication, a first pattern of first masking structures is formed, and a buffer layer is formed on exposed surfaces of the first masking structures. Also, a second pattern of second masking structures is formed in recesses between the buffer layer at sidewalls of the first masking structures. Furthermore, the first and masking structures are formed from spin-coating respective high carbon containing materials. Such first and second masking structures pattern a target layer with higher pitch than possible with traditional photolithography.

Abstract translation: 为了在集成电路制造期间进行图案化，形成第一掩模结构的第一图案，并且在第一掩模结构的暴露表面上形成缓冲层。 此外，在第一掩蔽结构的侧壁处的缓冲层之间的凹部中形成第二掩模结构的第二图案。 此外，第一掩模结构和掩模结构由各自含高含碳材料的旋涂形成。 这样的第一和第二掩模结构以比传统光刻法更高的间距对目标层进行图案化。

公开(公告)号：US20090191713A1

公开(公告)日：2009-07-30

申请号：US12235361

申请日：2008-09-22

Applicant: Dong-Ki YOON ,  Hyun-Woo KIM ,  Shi-Yong YI ,  Hai-Sub NA ,  Kyoung-Taek KIM ,  Yun-Kyeong JANG

Inventor： Dong-Ki YOON ,  Hyun-Woo KIM ,  Shi-Yong YI ,  Hai-Sub NA ,  Kyoung-Taek KIM ,  Yun-Kyeong JANG

IPC: H01L21/311

CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/32139

Abstract: Provided is a method of forming a fine pattern using a block copolymer. The method comprises forming a coating layer including a block copolymer having a plurality of repeating units on a substrate. A mold is provided having a first pattern comprising a plurality of ridges and valleys. The first pattern is transferred from the mold into the coating layer. Then, a self-assembly structure is formed comprising a plurality of polymer blocks aligned in a direction guided by the ridges and valleys of the mold thereby rearranging the repeating units of the block copolymer within the coating layer by phase separation while the coating layer is located within the valleys of the mold. A portion of the polymer blocks are removed from among the plurality of polymer blocks and a self-assembly fine pattern of remaining polymer blocks is formed.

Abstract translation: 提供使用嵌段共聚物形成精细图案的方法。 该方法包括在基材上形成包含具有多个重复单元的嵌段共聚物的涂层。 提供具有包括多个脊和谷的第一图案的模具。 第一图案从模具转移到涂层中。 然后，形成自组装结构，其包括在由模具的脊和谷引导的方向上排列的多个聚合物块，从而通过相分离重新排列涂层内的嵌段共聚物的重复单元，同时涂层位于 在模具的山谷内。 聚合物嵌段的一部分从多个聚合物嵌段中除去，形成剩余的聚合物嵌段的自组装细微图案。

公开(公告)号：US20090155725A1

公开(公告)日：2009-06-18

申请号：US12283449

申请日：2008-09-12

Applicant: Shi-Yong Yi ,  Kyoung-Taek Kim ,  Hyun-Woo Kim ,  Dong-Ki Yoon

Inventor： Shi-Yong Yi ,  Kyoung-Taek Kim ,  Hyun-Woo Kim ,  Dong-Ki Yoon

IPC: G03F7/20

CPC classification number: H01L21/0332 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32139

Abstract: For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures.

Abstract translation: 为了在集成电路制造期间进行图案化，图像层被激活用于在两个最近的激活区域中的每一个处形成相应的第一类型聚合物块。 在图像层上形成一层嵌段共聚物，多个第一类聚合物嵌段和多个第二和第三类聚合物嵌段形成在图像层的两个最近活化区域的外边缘之间的区域上 ，来自嵌段共聚物。 第一，第二和第三类型的聚合物嵌段中的至少一种被去除以形成各种掩模结构。

公开(公告)号：US20170129972A1

公开(公告)日：2017-05-11

申请号：US15345910

申请日：2016-11-08

Applicant: Jeong-Ju PARK ,  Seung-Chul KWON ,  Eun-Sung KIM ,  Kyeong-Mi LEE ,  Shi-Yong YI ,  Tsuyosh KUROSAWA ,  Katsumi OHMORI ,  Tasuku MATSUMIYA

Inventor： Jeong-Ju PARK ,  Seung-Chul KWON ,  Eun-Sung KIM ,  Kyeong-Mi LEE ,  Shi-Yong YI ,  Tsuyosh KUROSAWA ,  Katsumi OHMORI ,  Tasuku MATSUMIYA

IPC: C08F12/08 ,  H01L27/108 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/311 ,  C08F299/04 ,  C08F20/28

CPC classification number: G03F7/165 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  C08F20/28 ,  C08L53/00 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10844 ,  H01L28/00

Abstract: In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.

公开(公告)号：US20120015527A1

公开(公告)日：2012-01-19

申请号：US13239555

申请日：2011-09-22

Applicant: SHI-YONG Yi ,  KYOUNG-TAEK KIM ,  HYUN-WOO KIM ,  DONG-KI YOON

Inventor： SHI-YONG Yi ,  KYOUNG-TAEK KIM ,  HYUN-WOO KIM ,  DONG-KI YOON

IPC: H01L21/312

CPC classification number: H01L21/0332 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32139

Abstract: For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures.

Abstract translation: 对于在集成电路制造期间的图案化，图像层被激活用于在两个最近的激活区域中的每一个处形成相应的第一类型聚合物块。 在图像层上形成一层嵌段共聚物，多个第一类聚合物嵌段和多个第二和第三类聚合物嵌段形成在图像层的两个最近活化区域的外边缘之间的区域上 ，来自嵌段共聚物。 第一，第二和第三类型的聚合物嵌段中的至少一种被去除以形成各种掩模结构。

公开(公告)号：US20120003587A1

公开(公告)日：2012-01-05

申请号：US13236945

申请日：2011-09-20

Applicant: Kyoung Taek KIM ,  Hyun Woo KIM ,  Sang Ouk KIM ,  Shi Yong YI ,  Seong Woon CHOI

Inventor： Kyoung Taek KIM ,  Hyun Woo KIM ,  Sang Ouk KIM ,  Shi Yong YI ,  Seong Woon CHOI

IPC: G03F7/20

CPC classification number: B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00

Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract translation: 图案化衬底的方法包括处理衬底的第一区域以形成第一图案，第一区域限定相邻第一区域之间的第二区域，在第一和第二区域上布置嵌段共聚物，所述嵌段共聚物包括第一组分和 第二组分，嵌段共聚物的第一组分在第一区域上对准，并且选择性地除去嵌段共聚物的第一组分和第二组分中的一种，以形成具有小于间距的沥青的第二图案 第一区域和相邻的第二区域。

公开(公告)号：US08039196B2

公开(公告)日：2011-10-18

申请号：US12076491

申请日：2008-03-19

Applicant: Kyoung Taek Kim ,  Hyun Woo Kim ,  Sang Ouk Kim ,  Shi Yong Yi ,  Seong Woon Choi

Inventor： Kyoung Taek Kim ,  Hyun Woo Kim ,  Sang Ouk Kim ,  Shi Yong Yi ,  Seong Woon Choi

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/40

CPC classification number: B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00

Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract translation: 图案化衬底的方法包括处理衬底的第一区域以形成第一图案，第一区域限定相邻第一区域之间的第二区域，在第一和第二区域上布置嵌段共聚物，所述嵌段共聚物包括第一组分和 第二组分，嵌段共聚物的第一组分在第一区域上对准，并且选择性地除去嵌段共聚物的第一组分和第二组分中的一种，以形成具有小于间距的沥青的第二图案 第一区域和相邻的第二区域。

公开(公告)号：US20100167214A1

公开(公告)日：2010-07-01

申请号：US12591427

申请日：2009-11-19

Applicant: Dong Ki Yoon ,  Shi-yong Yi ,  Seok-hwan Oh ,  Kyoung-seon Kim ,  Sang Ouk Kim ,  Seung-hak Park

Inventor： Dong Ki Yoon ,  Shi-yong Yi ,  Seok-hwan Oh ,  Kyoung-seon Kim ,  Sang Ouk Kim ,  Seung-hak Park

IPC: G03F7/20

CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/405 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers.

Abstract translation: 形成精细图案的方法包括在基板上形成有机引导层，在有机引导层上形成光致抗蚀剂图案，光致抗蚀剂图案包括暴露部分有机引导层的多个开口，在暴露的 有机引导层的部分和光致抗蚀剂图案上的材料层包括嵌段共聚物，并且通过将嵌段共聚物相分离成精细图案层来重排材料层，使得精细图案层包括多个第一嵌段和 以交替图案排列的多个第二块，多个第一块和多个第二块具有不同的嵌段共聚物的重复单元。

公开(公告)号：US20090274980A1

公开(公告)日：2009-11-05

申请号：US12267687

申请日：2008-11-10

Applicant: Yool Kang ,  Suk-joo Lee ,  Jung-hyeon Lee ,  Shi-yong Yi

Inventor： Yool Kang ,  Suk-joo Lee ,  Jung-hyeon Lee ,  Shi-yong Yi

IPC: G03F7/20

CPC classification number: H01L21/027 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/32139

Abstract: A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate so as to be separated from one another. A capping film including an acid source is formed on sidewalls and an upper surface of each of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain in the first spaces after removing the acid diffused regions of the second mask layer.

Abstract translation: 提供了根据使用酸扩散的双重图案化工艺形成半导体器件的精细图案的方法。 在该方法中，在基板上形成多个第一掩模图案以彼此分离。 在多个第一掩模图案的每一个的侧壁和上表面上形成包括酸源的封盖膜。 在封盖膜上形成第二掩模层。 通过将从酸源获得的酸从封盖膜扩散到第二掩模层中，在第二掩模层内形成多个酸扩散区。 多个第二掩模图案由除去第二掩模层的酸扩散区域之后残留在第一间隙中的第二掩模层的残留部分形成。