公开(公告)号：US20240280513A1

公开(公告)日：2024-08-22

申请号：US18224325

申请日：2023-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Jae Hong LEE ,  Jungwon PARK ,  Min-Ho KANG ,  Minyoung LEE ,  Hyeong Seok JANG ,  Won Jong JUNG ,  Jin Ha KIM ,  Kak NAMKOONG ,  Hyung Jun YOUN

IPC: G01N23/06 ,  B81B1/00 ,  B81C1/00 ,  G01N33/483

CPC classification number: G01N23/06 ,  B81B1/002 ,  B81C1/00071 ,  G01N33/483 ,  B81B2201/05 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C2201/0132 ,  B81C2201/0181 ,  B81C2201/0198

Abstract: The present disclosure provides methods and apparatuses for biomaterial detection sensors. In some embodiments, a biomaterial detection sensor includes a membrane including a plurality of wells. Each of the plurality of wells is configured to encapsulate a biomaterial contained in a sample solution. A surface of the membrane is selectively modified into at least one of a hydrophilic surface and a hydrophobic surface. In some embodiments, a method of manufacturing a biomaterial detection sensor includes depositing a first membrane and a second membrane on respective surfaces of a wafer, forming a window by etching the first membrane and the first surface of the wafer, forming a plurality of wells on the second membrane, modifying a surface of the second membrane into at least one of a hydrophilic surface and a hydrophobic surface; and transferring a two-dimensional graphene oxide material onto a bottom of each of the plurality of wells.

公开(公告)号：US11953675B2

公开(公告)日：2024-04-09

申请号：US18072227

申请日：2022-11-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuya Sugimoto ,  Tomofumi Suzuki ,  Kyosuke Kotani ,  Yutaka Kuramoto ,  Daiki Suzuki

IPC: B81B3/00 ,  B81C1/00 ,  G02B7/182 ,  G02B26/08 ,  G02B26/10 ,  H02N1/00

CPC classification number: G02B26/0841 ,  B81B3/0045 ,  B81C1/00555 ,  G02B7/1821 ,  G02B26/105 ,  H02N1/008 ,  B81B2201/042 ,  B81C2201/013 ,  B81C2201/0174 ,  B81C2201/0198

Abstract: An optical device includes a support portion a movable unit and a pair of torsion bars disposed on both sides of the movable unit on a first axis. The movable unit includes a main body portion, a ring-shaped portion surrounding the main body portion when viewed from a predetermined direction perpendicular to the first axis, two connection portions connecting the main body portion and the ring-shaped portion to each other, and a rib portion provided to the main body portion. Each of the two connection portions includes two connection regions that are separated from each other by a space and the each of the two connection region connects the main body portion and the ring-shaped portion to each other. The rib portion includes four extending portions radially extending between a center of the main body portion and the four connection regions respectively when viewed from the predetermined direction.

公开(公告)号：US11945712B2

公开(公告)日：2024-04-02

申请号：US17320993

申请日：2021-05-14

Applicant: STMicroelectronics S.r.l.

Inventor： Giorgio Allegato ,  Lorenzo Corso ,  Ilaria Gelmi ,  Carlo Valzasina

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0051 ,  B81C1/00595 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/0198

Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.

公开(公告)号：US20230202835A1

公开(公告)日：2023-06-29

申请号：US18115178

申请日：2023-02-28

Applicant: InvenSense, Inc.

Inventor： Daesung Lee ,  Alan Cuthbertson

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00095 ,  B81B7/0006 ,  B81B2207/07 ,  B81B2207/012 ,  B81C2201/014 ,  B81C2201/0198 ,  B81C2203/036 ,  B81C2203/0792

Abstract: A method including fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a hardmask on a second side of the device wafer, wherein the second side is planar. An etch stop layer is deposited over the hardmask and an exposed portion of the second side of the device wafer. A dielectric layer is formed over the etch stop layer. A via is formed within the dielectric layer. The via is filled with conductive material. A eutectic bond layer is formed over the conductive material. Portions of the dielectric layer uncovered by the eutectic bond layer is etched to expose the etch stop layer. The exposed portions of the etch stop layer is etched. A micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.

公开(公告)号：US20190062157A1

公开(公告)日：2019-02-28

申请号：US16015640

申请日：2018-06-22

Applicant: HITACHI, LTD.

Inventor： Keiji WATANABE ,  Hiroyasu SHICHI ,  Misuzu SAGAWA ,  Toshiyuki MINE ,  Daisuke RYUZAKI

IPC: B81C99/00 ,  B81C1/00 ,  H01J37/317 ,  H01J37/304 ,  H01J37/147 ,  G03F7/20

CPC classification number: B81C99/0025 ,  B81C1/00412 ,  B81C99/0065 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0198 ,  G03F7/2059 ,  H01J37/1474 ,  H01J37/304 ,  H01J37/3056 ,  H01J37/3174 ,  H01J2237/28 ,  H01J2237/31749 ,  H01J2237/31755 ,  H01J2237/31776

Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

公开(公告)号：US20180016136A1

公开(公告)日：2018-01-18

申请号：US15546260

申请日：2016-01-21

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Muchen Xu ,  Chang-Jin Kim

IPC: B81C1/00 ,  B29C33/64 ,  B29C33/42 ,  B29C33/44

CPC classification number: B81C1/00373 ,  B29C33/42 ,  B29C33/44 ,  B29C33/64 ,  B81B2207/056 ,  B81C1/00111 ,  B81C1/00357 ,  B81C1/00555 ,  B81C99/0085 ,  B81C2201/0198 ,  B81C2201/036 ,  B81C2203/0136 ,  B81C2203/036 ,  B81C2203/0757

Abstract: A method of making microstructures having re-entrant or doubly re-entrant topology includes forming a mold defining the negative surface features of the re-entrant or doubly re-entrant topology that is to be formed. In one embodiment, a soft or flowable material is formed on a first substrate and the mold is contacted with the same to form a solid, now positive surface having the re-entrant or doubly re-entrant topology. The mold is then released from the first substrate. The microstructures are secured to a second, different substrate, and the first substrate is removed. Any residual microstructure material located between adjacent microstructures may be removed to form the separate microstructures on the second substrate. The second substrate may be thin and flexible any manipulated into useful or desired shapes having the microstructures on one side thereof.

公开(公告)号：US09611142B2

公开(公告)日：2017-04-04

申请号：US15077188

申请日：2016-03-22

Applicant: SUMITOMO PRECISION PRODUCTS CO., LTD.

Inventor： Yasuyuki Hirata ,  Gen Matsuoka

IPC: H01L21/31 ,  B81C1/00 ,  G02B26/08 ,  B81B3/00

CPC classification number: B81C1/00492 ,  B81B3/0086 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C1/00404 ,  B81C1/00603 ,  B81C2201/0102 ,  B81C2201/0132 ,  B81C2201/0198 ,  G02B26/0841

Abstract: At the first etching step of etching an SOI substrate from a first silicon layer side, a portion of a first structure formed of the first silicon layer is formed as a pre-structure having a larger shape than a final shape. At the mask formation step of forming a final mask on a second silicon layer side of the SOI substrate, a first mask corresponding to the final shape of the first structure is formed in the pre-structure. At the second etching step of etching the SOI substrate from the second silicon layer side, the second silicon layer and the pre-structure are, using the first mask, etched to form the final shape of the first structure.

公开(公告)号：US20170050844A1

公开(公告)日：2017-02-23

申请号：US14827683

申请日：2015-08-17

Applicant: Texas Instruments Incorporated

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: A hermetic package comprising a substrate (110) having a surface with a MEMS structure (101) of a first height (101a), the substrate hermetically sealed to a cap (120) forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack (130) of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (140); the stack having a bottom first metal seed film (131a) adhering to the substrate and a bottom second metal seed film (131b) adhering to the bottom first seed film, both seed films of a first width (131c) and a common sidewall (138); further a top first metal seed film (132a) adhering to the cap and a top second metal seed film (132b) adhering to the top first seed film, both seed films with a second width (132c) smaller than the first width and a common sidewall (139); the bottom and top metal seed films tied to a metal layer (135) including gold-indium intermetallic compounds, layer (135) having a second height (133a) greater than the first height and encasing the seed films and common sidewalls.

Abstract translation: 一种密封包装，其包括具有具有第一高度（101a）的MEMS结构（101）的表面的基底（110），所述基底被气密地密封到在所述MEMS结构上形成空腔的帽（120） 所述盖通过粘附到所述基板表面和所述盖的金属层的垂直堆叠（130）附接到所述基板表面，所述堆叠具有围绕所述MEMS结构的连续轮廓，同时与所述MEMS结构隔开距离（140）; 所述堆叠具有附着到所述基板的底部第一金属种子膜（131a）和粘附到所述底部第一种子膜的底部第二金属种子膜（131b），具有第一宽度（131c）和公共侧壁（138）的两种种子膜 ）; 另外，粘附到盖的顶部第一金属种子膜（132a）和粘附到顶部第一种子膜的顶部第二金属种子膜（132b），具有小于第一宽度的第二宽度（132c）的两种种子膜和共同的 侧壁（139）; 连接到包括金 - 铟金属间化合物的金属层（135）的底部和顶部金属种子膜，具有大于第一高度的第二高度（133a）的层（135）并且包围种子膜和共同侧壁。

公开(公告)号：US20160200569A1

公开(公告)日：2016-07-14

申请号：US15077188

申请日：2016-03-22

Applicant: SUMITOMO PRECISION PRODUCTS CO., LTD.

Inventor： Yasuyuki HIRATA ,  Gen MATSUOKA

IPC: B81C1/00

CPC classification number: B81C1/00492 ,  B81B3/0086 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C1/00404 ,  B81C1/00603 ,  B81C2201/0102 ,  B81C2201/0132 ,  B81C2201/0198 ,  G02B26/0841

Abstract: At the first etching step of etching an SOI substrate from a first silicon layer side, a portion of a first structure formed of the first silicon layer is formed as a pre-structure having a larger shape than a final shape. At the mask formation step of forming a final mask on a second silicon layer side of the SOI substrate, a first mask corresponding to the final shape of the first structure is formed in the pre-structure. At the second etching step of etching the SOI substrate from the second silicon layer side, the second silicon layer and the pre-structure are, using the first mask, etched to form the final shape of the first structure.

Abstract translation: 在从第一硅层侧蚀刻SOI衬底的第一蚀刻步骤中，由第一硅层形成的第一结构的一部分形成为具有比最终形状更大的形状的预结构。 在SOI衬底的第二硅层侧形成最终掩模的掩模形成步骤中，在预结构中形成对应于第一结构的最终形状的第一掩模。 在从第二硅层侧蚀刻SOI衬底的第二蚀刻步骤中，使用第一掩模蚀刻第二硅层和预制结构以形成第一结构的最终形状。

公开(公告)号：US09315609B2

公开(公告)日：2016-04-19

申请号：US14104304

申请日：2013-12-12

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick

IPC: C08F299/02 ,  C08F299/04 ,  H01L21/311 ,  B81C1/00 ,  B82Y30/00 ,  H01L21/033 ,  G03F7/00

CPC classification number: H01L21/76828 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  C08F299/0492 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了使用自组装嵌段共聚物制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。