公开(公告)号：US20100178717A1

公开(公告)日：2010-07-15

申请号：US12684248

申请日：2010-01-08

Applicant: Ryuji KIHARA ,  Shogo INABA

Inventor： Ryuji KIHARA ,  Shogo INABA

IPC: H01L21/66

CPC classification number: H03H3/0077 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/02511

Abstract: A method of manufacturing an MEMS device includes: forming a covering structure having an MEMS structure and a hollow portion, which is located on a periphery of the MEMS structure and is opened to an outside, on a substrate; and performing surface etching for the MEMS structure in a gas phase by supplying an etching gas to the periphery of the MEMS structure from the outside.

Abstract translation: 一种制造MEMS器件的方法包括：在基板上形成具有MEMS结构的覆盖结构和位于MEMS结构的外围并向外部敞开的中空部分; 并且通过从外部向MEMS结构的外围提供蚀刻气体，在气相中对MEMS结构进行表面蚀刻。

公开(公告)号：US20100148284A1

公开(公告)日：2010-06-17

申请号：US12710773

申请日：2010-02-23

Applicant: Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

Inventor： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC: H01L29/84

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US20090302707A1

公开(公告)日：2009-12-10

申请号：US12534468

申请日：2009-08-03

Applicant: Shogo INABA ,  Akira SATO

Inventor： Shogo INABA ,  Akira SATO

IPC: H02N11/00

CPC classification number: H03H9/2457 ,  H03H3/0072 ,  H03H9/02433 ,  H03H2009/02511

Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.

Abstract translation: 一种微电子机械系统谐振器，包括：基板; 形成在基板上的固定电极; 以及可动电极，其布置成面对固定电极并且通过作用在固定电极和可动电极之间的间隙的静电吸引力或静电排斥力驱动。 面对固定电极的可动电极的支撑梁的内表面具有倾斜表面。

公开(公告)号：US20080224241A1

公开(公告)日：2008-09-18

申请号：US12045990

申请日：2008-03-11

Applicant: Shogo INABA ,  Akira SATO

Inventor： Shogo INABA ,  Akira SATO

IPC: H01L29/84 ,  H01L21/00

CPC classification number: B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

Abstract translation: 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US20080093685A1

公开(公告)日：2008-04-24

申请号：US11876107

申请日：2007-10-22

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L29/84

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US08552512B2

公开(公告)日：2013-10-08

申请号：US12907337

申请日：2010-10-19

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H01L29/84

CPC classification number: B81B3/0086

Abstract: A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.

Abstract translation: 微电子机械系统（MEMS）装置包括：由硅制成并设置在半导体衬底之上的固定电极; 由硅制成的可移动电极，通过与半导体衬底有间隙以机械可移动的方式布置; 以及设置在可动电极周围的布线层叠部，覆盖固定电极的一部分并且包括布线。 固定电极和可动电极之一注入杂质离子，被布线层叠部覆盖的固定电极的部分的至少一部分被硅化。

公开(公告)号：US08432232B2

公开(公告)日：2013-04-30

申请号：US13045960

申请日：2011-03-11

Applicant: Shogo Inaba

Inventor： Shogo Inaba

IPC: H03B5/30

CPC classification number: H03H9/1057 ,  H01L29/84 ,  H03H3/0072 ,  H03H9/2452 ,  H03H2240/00

Abstract: A MEMS device includes a substrate, a cavity formed above the substrate, a first vibrator contained in the cavity, and a second vibrator contained in the cavity and having a natural frequency different from that of the first vibrator. The first vibrator and the second vibrator are preferably arranged along a long side of the cavity having a rectangular shape in plan view.

Abstract translation: MEMS器件包括衬底，在衬底上形成的空腔，容纳在空腔中的第一振动器和容纳在腔中并具有与第一振动器的固有频率不同的固有频率的第二振动器。 第一振动器和第二振动器优选地在平面图中沿着具有矩形形状的空腔的长边布置。

公开(公告)号：US20120127683A1

公开(公告)日：2012-05-24

申请号：US13359965

申请日：2012-01-27

Applicant: Shogo INABA ,  Akira SATO

Inventor： Shogo INABA ,  Akira SATO

IPC: H05K7/06

CPC classification number: B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

Abstract translation: 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US08129804B2

公开(公告)日：2012-03-06

申请号：US13168561

申请日：2011-06-24

Applicant: Shogo Inaba ,  Akira Sato

Inventor： Shogo Inaba ,  Akira Sato

IPC: H01L29/84

CPC classification number: B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

Abstract translation: 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US08115266B2

公开(公告)日：2012-02-14

申请号：US13170628

申请日：2011-06-28

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L27/14 ,  H01L29/82 ,  H01L29/84 ,  H01L23/48

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。