公开(公告)号：US20230207329A1

公开(公告)日：2023-06-29

申请号：US17801964

申请日：2021-02-25

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: H01L21/3213

CPC classification number: H01L21/32134

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium including a ligand which coordinates to ruthenium, the treatment liquid is a treatment liquid for inhibiting a ruthenium-containing gas generated when contacting a semiconductor wafer including ruthenium with the treatment liquid in a semiconductor forming process. Also provided is an inhibitor for the generation of a ruthenium-containing gas, including a compound having a carbonyl group or a heterocyclic compound. Further provided is a treatment agent for a ruthenium-containing waste liquid, including a compound having a carbonyl group or a heterocyclic compound.

公开(公告)号：US11674230B2

公开(公告)日：2023-06-13

申请号：US17261387

申请日：2020-07-08

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki Sato ,  Yuki Kikkawa ,  Takafumi Shimoda ,  Takayuki Negishi

IPC: C23F1/40 ,  H01L21/306

CPC classification number: C23F1/40 ,  H01L21/30604

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

公开(公告)号：US20230125516A1

公开(公告)日：2023-04-27

申请号：US17912426

申请日：2021-04-12

Applicant: TOKUYAMA CORPORATION

Inventor： Go HAMASAKA ,  Keiji SAIKI ,  Hao HU

IPC: C09C1/30 ,  C08K9/06 ,  C08K3/36

Abstract: Provided is a method for producing surface-treated silica powder that has excellent gap permeability and that allows a resin composition to have low viscosity in a case where the surface-treated silica powder is used as a resin filler, for example, for a semiconductor sealant. A surface treatment agent is brought into contact with silica powder such that: (1) a cumulative 50 mass % diameter D50 of a mass-based particle size distribution obtained by a centrifugal sedimentation method is 300 nm to 500 nm (preferably 330 nm to 400 nm); (2) a loose bulk density is 250 kg/m3 to 400 kg/m3 (preferably 270 kg/m3 to 350 kg/m3); and (3) {(D90−D50)/D50}×100 is 30% to 45% (preferably 33% to 42%), to modify the surface of the silica powder, so that surface-treated silica powder is produced.

公开(公告)号：US20230121726A1

公开(公告)日：2023-04-20

申请号：US17915189

申请日：2021-03-30

Applicant: TOKUYAMA CORPORATION

Inventor： Masashi Shinagawa ,  Takashi Tokunaga ,  Yuu Mishima ,  Shunsuke Hosaka

IPC: C11D7/50 ,  C11D11/00 ,  C11D7/26 ,  C07C29/82

Abstract: Provided are: a semiconductor treatment liquid comprising high-purity isopropyl alcohol, wherein the concentration of the oxolane compound expressed in formula (1) below when held for 60 days in a nitrogen atmosphere at 50° C. in a SUS304 container is 25 ppb or less on a mass basis in relation to the isopropyl alcohol; and a method for manufacturing said semiconductor treatment liquid. In the formula, R1 and R2 each independently represent a hydrogen atom or a C1-3 alkyl group, and the total number of carbon atoms in R1 and R2 is 3 or less. R3 represents a hydrogen atom or an isopropyl group.

公开(公告)号：US20230096320A1

公开(公告)日：2023-03-30

申请号：US17798913

申请日：2021-03-23

Applicant: TOKUYAMA CORPORATION

Inventor： Yasuyuki TANAKA

IPC: C25B9/23 ,  C25B1/04 ,  C25B1/34 ,  C25B9/60 ,  C25B11/031 ,  C25B15/04

Abstract: An alkaline water electrolysis vessel including: an anode-side frame body defining an anode chamber; a cathode-side frame body defining a cathode chamber; an ion-permeable separating membrane being arranged between the anode-side frame body and the cathode-side frame body, and separating the anode chamber and the cathode chamber; a gasket being sandwiched by the anode-side frame body and the cathode-side frame body to be held therebetween, and holding the periphery of the separating membrane; an anode being arranged in the anode chamber without being held by the gasket; a cathode being arranged in the cathode chamber without being held by the gasket; and an electroconductive first elastic body arranged in the anode chamber, wherein the anode is a flexible first porous plate; and the anode is arranged between the separating membrane and the first elastic body, and is pushed by the first elastic body toward the cathode.

公开(公告)号：US11590509B2

公开(公告)日：2023-02-28

申请号：US16385816

申请日：2019-04-16

Applicant: Tokuyama Corporation

Inventor： Kazuhiro Kawaguchi ,  Masami Fujii ,  Sho Uchida ,  Manabu Kondo ,  Yoshifumi Mito ,  Nobuaki Yoshimatsu

IPC: B02C1/04 ,  C01B33/02 ,  B02C23/30 ,  B02C23/10 ,  C30B15/02

Abstract: A polycrystalline silicon block fracture device includes a fracturing part mechanically fracturing a polycrystalline silicon block material to produce a polycrystalline silicon fragment including a polycrystalline silicon powder having a particle size of 500 to 1000 μm then discharging from a discharging port; a falling movement part continuous with a downstream of the fracturing part allowing said polycrystalline silicon fragment discharged from the discharging port to fall by gravity; a receiver part positioned at downstream of the falling movement part and receives the polycrystalline silicon fragment after falling through the falling movement part; and the falling movement part includes a suction removing part in which at least part of the polycrystalline silicon powder included in the polycrystalline silicon fragment is removed by suctioning to a different direction from falling direction; the suction removing part suctions at a suction rate of 1 to 20 m3/min.

公开(公告)号：US20220411937A1

公开(公告)日：2022-12-29

申请号：US17642059

申请日：2021-11-25

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C23F1/40 ,  H01L21/3213

Abstract: The present invention provides a semiconductor wafer treatment liquid, the treatment liquid including at least one hypohalite ion, and at least one anion species selected from halate ion, halite ion and halide ion, wherein at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L or less relative to the treatment liquid.

公开(公告)号：US20220403242A1

公开(公告)日：2022-12-22

申请号：US17821490

申请日：2022-08-23

Applicant: Tokuyama Corporation ,  SCREEN Holdings Co., Ltd.

Inventor： Yoshiki SEIKE ,  Seiji TONO ,  Kenji KOBAYASHI ,  Sei NEGORO

IPC: C09K13/00 ,  H01L21/3213 ,  H01L21/306

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2   (1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

公开(公告)号：US20220380935A1

公开(公告)日：2022-12-01

申请号：US17619521

申请日：2020-05-28

Applicant: TOKUYAMA CORPORATION

Inventor： Junya SAKAI ,  Kazuhiro KAWAGUCHI

IPC: C30B35/00 ,  C01B33/035

Abstract: It is possible to carry out an operation to open a reactor while checking a falling over status of a silicon rod. A protective structure (200) includes: a first frame body (201) that is shaped so as to surround a bottom plate (101) of a reactor (100) in which a silicon rod (110) is contained; and a protective wall surface (204) that extends vertically upward from the first frame body (201) and that forms an storage space (210) for the silicon rod (110). The protective wall surface (204) has a mesh structure.

公开(公告)号：US20220328320A1

公开(公告)日：2022-10-13

申请号：US17708596

申请日：2022-03-30

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki KIKKAWA ,  Tomoaki SATO ,  Takayuki NEGISHI

IPC: H01L21/306

Abstract: Provided are: a semiconductor treatment liquid containing a hypobromite ion, in which the concentration of the hypobromite ion is 0.1 μmol/L or more and less than 0.001 mol/L; a RuO4 gas generation inhibitor containing an onium salt composed of an onium ion and a bromine-containing ion, in which the hypobromite ion concentration is 0.1 μmol/L or more and less than 0.001 mol/L; and a method of producing a halogen oxyacid, the method including allowing a bromine salt, an organic alkali, and a halogen to react with each other to obtain the halogen oxyacid.