公开(公告)号：US5604835A

公开(公告)日：1997-02-18

申请号：US361681

申请日：1994-12-22

Applicant: Tohru Nakamura ,  Tomonori Tanoue ,  Takeshi Kato ,  Mitsuo Takeda

Inventor： Tohru Nakamura ,  Tomonori Tanoue ,  Takeshi Kato ,  Mitsuo Takeda

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/125 ,  G02B6/13 ,  G02B6/132 ,  G02B6/10

CPC classification number: G02B6/125 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/132

Abstract: An integrated optical waveguide device includes a substrate, and an optical waveguide which is formed in the form of projection or is formed in a trench formed in the substrate. Each optical waveguide has a first optical area made of a first optical material and a second optical area which is made of a second optical material and is surrounded by the first optical area. The optical waveguides are arranged on both side faces of the projection or trench.

Abstract translation: 集成光波导装置包括基板和形成为突起形状或形成在形成于基板中的沟槽中的光波导。 每个光波导具有由第一光学材料制成的第一光学区域和由第二光学材料制成并被第一光学区域包围的第二光学区域。 光波导布置在突起或沟槽的两个侧面上。

公开(公告)号：US5229623A

公开(公告)日：1993-07-20

申请号：US746288

申请日：1991-08-13

Applicant: Tomonori Tanoue ,  Hiroshi Mizuta ,  Susumu Takahashi

Inventor： Tomonori Tanoue ,  Hiroshi Mizuta ,  Susumu Takahashi

IPC: G02F3/02 ,  G06N3/063 ,  G06N3/067 ,  G11C11/56

CPC classification number: B82Y10/00 ,  G02F3/028 ,  G06N3/0635 ,  G06N3/0675 ,  G11C11/56 ,  G11C13/04 ,  G11C2211/5614

Abstract: A semiconductor device is disclosed, which includes a multiple negative differential resistance element having negative differential resistance characteristics at at least two places in the current-voltage characteristics, and which is suitable for constructing a neural network having a high density integration and a high reliability.

Abstract translation: 公开了一种半导体器件，其包括在电流 - 电压特性中的至少两个位置具有负的差分电阻特性的多个负的差分电阻元件，并且适用于构建具有高密度集成和高可靠性的神经网络。

公开(公告)号：US5023687A

公开(公告)日：1991-06-11

申请号：US304210

申请日：1989-01-31

Applicant: Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi

Inventor： Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/8226 ,  H01L21/8228 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/082 ,  H01L27/12 ,  H01L29/737

CPC classification number: H01L29/66318 ,  H01L21/8226 ,  H01L21/8252 ,  H01L27/0605

Abstract: A complementary semiconductor device is disclosed having a substrate and a four layer structure of pnpn provided on the substrate wherein the first three layers constitute a pnp-type bipolar transistor and the second to the fourth layer constitute an npn-type bipolar transistor. According to the present invention, the pnp- and npn-type transistor which are disposed on different portions of a principal surface of the substrate, respectively, can be produced concurrently by crystal growth and thus production steps are simple and yield is remarkably improved.

公开(公告)号：US4983532A

公开(公告)日：1991-01-08

申请号：US286710

申请日：1988-12-20

Applicant: Katsuhiko Mitani ,  Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi ,  Masayoshi Saito ,  Hiroshi Miyazaki ,  Fumio Murai

Inventor： Katsuhiko Mitani ,  Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi ,  Masayoshi Saito ,  Hiroshi Miyazaki ,  Fumio Murai

IPC: H01L29/205 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737

CPC classification number: H01L29/66318 ,  Y10S148/01 ,  Y10S148/011 ,  Y10S148/072 ,  Y10S148/10

Abstract: Microfabrication and large scale integration of a device can be realized by using a planar heterojunction bipolar transistor formed by a process comprising successively growing semiconductor layers serving as a subcollector, a collector, a base, and an emitter, respectively, through epitaxial growth on a compound semiconductor substrate in such a manner that at least one of the emitter junction and collector junction is a heterojunction, wherein a collector drawing-out metal layer is formed by the selective CVD method.

Abstract translation: 可以通过使用通过包括通过在化合物上的外延生长分别连续生长用作子集电极，集电极，基极和发射极的半导体层的工艺形成的平面异质结双极晶体管来实现器件的微结构和大规模集成 半导体衬底，其中发射极结和集电极结中的至少一个是异质结，其中通过选择性CVD法形成集电体引出金属层。

公开(公告)号：US08306490B2

公开(公告)日：2012-11-06

申请号：US13451850

申请日：2012-04-20

Applicant: Tomonori Tanoue ,  Hidetoshi Matsumoto

Inventor： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC: H01Q11/12

CPC classification number: H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

Abstract: A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

Abstract translation: 无论负载阻抗的波动如何，高频功率放大器保持良好的线性度，并且小型化。 高频功率放大器检测最终放大级晶体管的输出端的交流电压振幅，并且当电压振幅超过预定阈值时，抑制功率放大器的输入信号振幅。

公开(公告)号：US20110304388A1

公开(公告)日：2011-12-15

申请号：US13114340

申请日：2011-05-24

Applicant: Taizo YAMAWAKI ,  Tomonori TANOUE ,  Kazuaki HORI

Inventor： Taizo YAMAWAKI ,  Tomonori TANOUE ,  Kazuaki HORI

IPC: H04B1/40

CPC classification number: H04B1/006 ,  H04B1/52

Abstract: Disclosed are a semiconductor integrated circuit device and a wireless communication system that are capable of improving reception sensitivity. The wireless communication system includes, for instance, a first duplexer, a second duplexer, a first low-noise amplifier circuit, and a second low-noise amplifier circuit. A transmission band compliant with a communication standard is split into two segments for use, namely, low- and high-frequency transmission bands. A reception band compliant with the communication standard is split into two segments for use, namely, low- and high-frequency reception bands. The first duplexer uses the low-frequency transmission band and low-frequency reception band as passbands. The second duplexer uses the high-frequency transmission band and high-frequency reception band as passbands. A signal received from the first duplexer and a signal received from the second duplexer are respectively amplified by the first and the second low-noise amplifier circuits, which are respectively provided to handle such signals.

Abstract translation: 公开了能够提高接收灵敏度的半导体集成电路装置和无线通信系统。 无线通信系统包括例如第一双工器，第二双工器，第一低噪声放大器电路和第二低噪声放大器电路。 符合通信​​标准的传输频带被分成两个段，即低频和高频传输频带。 符合通信​​标准的接收频段被分为两段供低频和高频接收频段使用。 第一双工器使用低频传输频带和低频接收频带作为通带。 第二双工器使用高频传输频带和高频接收频带作为通带。 从第一双工器接收的信号和从第二双工器接收的信号分别由分别提供以处理这种信号的第一和第二低噪声放大器电路放大。

公开(公告)号：US20110248389A1

公开(公告)日：2011-10-13

申请号：US13050288

申请日：2011-03-17

Applicant: Chiko YORITA ,  Tsutomu HARA ,  Hiroshi OKABE ,  Tomonori TANOUE ,  Yuji SHIRAI

Inventor： Chiko YORITA ,  Tsutomu HARA ,  Hiroshi OKABE ,  Tomonori TANOUE ,  Yuji SHIRAI

IPC: H01L23/552 ,  H01L21/82 ,  H01L23/48

CPC classification number: H01L23/66 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/3677 ,  H01L23/552 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/16 ,  H01L2224/16225 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/0204 ,  H05K1/0206 ,  H05K1/144 ,  H05K3/0052 ,  H05K3/284 ,  H05K2201/042 ,  H05K2201/0715 ,  H05K2201/09972 ,  H05K2201/10242 ,  H05K2201/10371 ,  H05K2201/10416 ,  H05K2203/1316 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

Abstract: An upper module board on which an integrated chip component with a low upper temperature limit is mounted and a lower module board on which a heat-generating semiconductor chip, a single chip component and an integrated chip component are mounted are electrically and mechanically connected via a plurality of conductive connecting members, and these are sealed together with mold resin. In such a circumstance, a shield layer made up of a stacked film of a Cu plating film and a Ni plating film is formed on side surfaces of the upper and lower module boards and surfaces (upper and side surfaces) of the mold resin, thereby realizing the electromagnetic wave shield structure.

Abstract translation: 安装了具有低温度限制的集成芯片部件的上模块板和安装有发热半导体芯片，单芯片部件和集成芯片部件的下模块板通过以下方式电连接和机械连接： 多个导电连接构件，并且这些与模制树脂密封在一起。 在这种情况下，在模具树脂的上模块板和下模块板的表面（上表面和侧表面）的侧表面上形成由Cu镀膜和Ni镀膜的叠层膜构成的屏蔽层，由此 实现电磁波屏蔽结构。

公开(公告)号：US07408405B2

公开(公告)日：2008-08-05

申请号：US11182859

申请日：2005-07-18

Applicant: Masami Ohnishi ,  Tomonori Tanoue ,  Hidetoshi Matsumoto

Inventor： Masami Ohnishi ,  Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC: H03F1/14 ,  H03F3/191

CPC classification number: H03F1/0277 ,  H03F3/191 ,  H03F3/72 ,  H03F2203/7206

Abstract: For use in an amplifier configuration including a high-power amplifier and a low-power amplifier which are always interconnected in terms of high frequencies and between which switching is made using no switches, a highly stable high-frequency power amplifier module with high isolation between the amplifiers is provided. To reduce wrapping around from a low-power amplifier section in an activated state to a high-power amplifier section in a deactivated state or from the high-power amplifier section in an activated state to the low-power amplifier section in a deactivated state, an input matching circuit having high isolation characteristics is included in an input matching circuit portion which does not have much to do with amplifier efficiency. Switching of each of the amplifier sections between an activated state and a deactivated state is effected by control using bias input terminals.

Abstract translation: 为了在包括大功率放大器和低功率放大器的放大器配置中使用，该功率放大器和低功率放大器总是在高频率下互连，并且在不使用开关的情况下进行开关之间，高稳定的高频功率放大器模块之间具有高隔离度 提供放大器。 为了将处于激活状态的低功率放大器部分的周围环绕到处于去激活状态的高功率放大器部分或者处于激活状态的高功率放大器部分到处于去激活状态的低功率放大器部分， 具有高隔离特性的输入匹配电路包括在与放大器效率无关的输入匹配电路部分中。 每个放大器部分在激活状态和去激活状态之间的切换通过使用偏置输入端的控制来实现。

公开(公告)号：US07368988B2

公开(公告)日：2008-05-06

申请号：US11489609

申请日：2006-07-20

Applicant: Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

Inventor： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

IPC: H03G5/16

CPC classification number: H03G3/3042 ,  H03F1/30 ,  H03F3/189 ,  H03F3/68 ,  H03G3/3047

Abstract: In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.

Abstract translation: 在具有多级配置的基极偏置控制型高频功率放大器中，使提供给初级级晶体管的基极偏置电流的上升电压低于提供给第二级的基极偏置电流的上升电压 并且两个电压之间的差被设置为小于放大级晶体管的基极 - 发射极电压。 此外，使提供给第三级晶体管的基极偏置电流的上升电压等于提供给初级晶体管的基极偏置电流的上升电压。 因此，能够提高功率控制线性度的技术能够在用于极环回路发送机等的高频功率放大器中提供。

公开(公告)号：US07102427B2

公开(公告)日：2006-09-05

申请号：US10922146

申请日：2004-08-20

Applicant: Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Masami Ohnishi

Inventor： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Masami Ohnishi

IPC: H03F3/38 ,  H03G3/20

CPC classification number: H03F1/0227 ,  H03F2200/432

Abstract: An amplifier using a wide band, high efficiency, and low distortion amplifier free from clipping distortion, and a high efficiency and low distortion radio frequency power amplifier, using that amplifier, which can be applied to wide band wireless communication systems are provided. The amplifier has a DC—DC converter 2, augmented with a low pass filter 4, for amplifying the low frequency components of an input signal from a terminal 5, and a class B amplifier, augmented with a high pass filter, for amplifying the input signal and supplying its high frequency components after amplification. The DC—DC converter and the class B amplifier are connected in parallel, and the power supply voltage of the class B amplifier is controlled with the low frequency components of the input signal.

Abstract translation: 提供了一种使用宽带，高效率和低失真放大器的放大器，无限幅失真，以及高效率和低失真射频功率放大器，使用该放大器，可应用于宽带无线通信系统。 放大器具有DC-DC转换器2，增强了低通滤波器4，用于放大来自端子5的输入信号的低频分量，以及增加了高通滤波器的B类放大器，用于放大输入 信号并在放大后提供其高频分量。 DC-DC转换器和B类放大器并联，B类放大器的电源电压由输入信号的低频分量控制。