Low-dropout regulator for low voltage applications

    公开(公告)号:US12287659B2

    公开(公告)日:2025-04-29

    申请号:US18011753

    申请日:2021-05-06

    Applicant: ams-Osram AG

    Abstract: A low-dropout regulator for low voltage applications includes a buffer circuit being arranged between an output terminal of an error amplifier and a control node of a pass device. The buffer circuit includes a driver having a first transistor being embodied as an NMOS transistor. The output terminal of the error amplifier is coupled to the control node of the first transistor. The control node of the pass device is coupled to an internal node of a first current path including the first transistor. The low-dropout regulator has high load capability, even if an input supply voltage is very low.

    TIME TO DIGITAL CONVERSION
    23.
    发明申请

    公开(公告)号:US20240393746A1

    公开(公告)日:2024-11-28

    申请号:US18696903

    申请日:2022-07-18

    Applicant: ams-OSRAM AG

    Abstract: A circuit for time to digital conversion, the circuit comprises a time to digital converter, TDC, configured to receive trigger signals and event signals and, for each event signal, provide a time stamp indicative of a time period between the event signal and an associated trigger signal, a first memory unit for storing a set of time stamps associated with one trigger signal and provided by the TDC, and a processing unit configured to compare the set of time stamps stored in the first memory unit to new time stamps provided by the TDC to determine coincident time stamps.

    THIN PHOTODETECTOR DEVICE AND FABRICATION THEREOF

    公开(公告)号:US20240321932A1

    公开(公告)日:2024-09-26

    申请号:US18575774

    申请日:2022-06-13

    Applicant: ams-OSRAM AG

    Abstract: In an embodiment a method for fabricating a photodetector device includes providing a carrier substrate, wherein a device layer is arranged at a main surface of the carrier substrate, and an insulating layer is arranged between the device layer and the carrier substrate, forming a plurality of photodetector elements in the device layer, forming an intermetal dielectric on the device layer, wherein contact pads electrically connected to the photodetector elements are embedded in the intermetal dielectric, forming pad openings in the intermetal dielectric, the pad openings reaching the contact pads so that the contact pads are accessible via the pad openings, mounting a handling substrate on the intermetal dielectric, removing the carrier substrate, singulating the plurality of photodetector elements such that a plurality of separate photodetector chips comprising one photodetector element are formed and releasing the photodetector chips from the handling substrate.

    Peak comparator circuitry
    25.
    发明授权

    公开(公告)号:US12095466B2

    公开(公告)日:2024-09-17

    申请号:US17917169

    申请日:2021-03-22

    Applicant: ams-Osram AG

    CPC classification number: H03K5/24 G01D5/20 G01R19/0038

    Abstract: The peak comparator circuitry comprises a differential amplifier circuit having an output node to generate a differential amplifier output signal in response to an amplification of a difference of an input signal and a reference signal, and a comparator circuit having an output node to generate a comparator output signal. A feedback path of the peak comparator circuitry is arranged between the output node of the comparator circuit and the output node of the differential amplifier circuit. The proposed peak comparator circuitry allows for a low voltage supply, a low current consumption and a fast output validity.

    Optical system for an automotive headlamp

    公开(公告)号:US12000556B2

    公开(公告)日:2024-06-04

    申请号:US18254923

    申请日:2021-11-25

    Applicant: ams-Osram AG

    Abstract: An optical system for use in a headlamp of a motor vehicle includes condenser optics formed by a condenser lens matrix and being provided to focus incoming light beams. It further includes at least one reflective shield being provided to reflect at least a subset of the focused light beams and to create a cut-off line of outgoing light beams. It further includes imaging optics formed by an imaging lens matrix, which is provided to project the focused light beams and the reflected light beams in front of the headlamp, such that the reflected light beams contribute to an intensity hotspot on one side of the cut-off line.

    LATERAL FLOW TEST DEVICE
    27.
    发明公开

    公开(公告)号:US20240118276A1

    公开(公告)日:2024-04-11

    申请号:US18276885

    申请日:2021-12-21

    Applicant: ams-OSRAM AG

    CPC classification number: G01N33/54388

    Abstract: A lateral flow test device includes a test chamber having a detection aperture. The lateral flow test device also includes an optical detector configured to receive light from an assay test strip through the detection aperture when the assay test strip is provided in the test chamber. The test chamber is configured for manual feed of at least a portion of the assay test strip passed the detection aperture. The optical detector is configured to detect one or more tracking features associated with the assay test strip so as to determine when at least a test line on the assay test strip is detectable through the detection aperture.

    CIRCUIT FOR HIGH-SENSITIVITY RADIATION SENSING

    公开(公告)号:US20240102857A1

    公开(公告)日:2024-03-28

    申请号:US18267725

    申请日:2021-12-08

    Applicant: ams-OSRAM AG

    CPC classification number: G01J1/44 G01R19/0084 G01J2001/446

    Abstract: A circuit for sensing radiation with high sensitivity is disclosed. The circuit comprises a first transistor configurable to reset a voltage-level at a circuit node to a voltage reference. The circuit also comprises measurement circuitry configured to measure the voltage-level at the circuit node, and at least one photodiode configured to vary the voltage-level at the circuit node in response to radiation incident upon the photodiode during an integration period. The circuit also comprises processing circuitry configured to control the first transistor to reset the voltage-level at the circuit node and to subsequently configure the measurement circuitry to measure the voltage-level at a start and at an end of the integration period.

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