公开(公告)号：US11388811B1

公开(公告)日：2022-07-12

申请号：US17326359

申请日：2021-05-21

Applicant: AMULAIRE THERMAL TECHNOLOGY, INC.

Inventor： Shih-Hsi Tai ,  Tze-Yang Yeh

IPC: H05K1/02

Abstract: A heat-dissipating substrate structure with built-in conductive circuits is provided. The heat-dissipating substrate structure includes an electrically insulating layer, a first metal layer, a second metal layer, and a heat-dissipating layer. The first metal layer and the second metal layer are disposed on the heat-dissipating layer at an interval. The electrically insulating layer encloses and is in contact with side walls of the first metal layer and side walls of the second metal layer, such that a top wall of the first metal layer and a top wall of the second metal layer are exposed from the electrically insulating layer, and at least one of the conductive circuits extends through at least one of the side wall of the first metal layer and the side wall of the second metal layer and is embedded in the electrically insulating layer.

公开(公告)号：US20220193828A1

公开(公告)日：2022-06-23

申请号：US17132162

申请日：2020-12-23

Applicant: AMULAIRE THERMAL TECHNOLOGY, INC.

Inventor： Cheng-Shu Peng ,  Tze-Yang Yeh ,  Chih-Hung Shih

IPC: B23K26/40 ,  B05D1/12 ,  B05D3/06 ,  C09D5/00 ,  C09D7/61

Abstract: A lift-off structure for a sprayed thin layer on a substrate surface and a method for the same are provided. The lift-off structure for the sprayed thin layer on the substrate surface includes a base layer and a lifted-off sprayed thin layer. The lifted-off sprayed thin layer is formed on the base layer. The lifted-off sprayed thin layer has at least one ablated new side surface formed thereon, and the at least one ablated new side surface has an inclination angle.

公开(公告)号：US11081421B2

公开(公告)日：2021-08-03

申请号：US16711830

申请日：2019-12-12

Applicant: AMULAIRE THERMAL TECHNOLOGY, INC.

Inventor： Tzu-Hsuan Wang ,  Tze-Yang Yeh ,  Chun-Lung Wu

IPC: H01L23/373 ,  H01L25/07 ,  H01L23/00 ,  H01L23/367

Abstract: An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a first polymer composite layer, a second polymer composite layer, a first ceramic layer, a second ceramic layer, and a heat dissipation layer. The first ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the first layer of chips, and the second ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the second layer of chips.

公开(公告)号：US10475723B1

公开(公告)日：2019-11-12

申请号：US16182535

申请日：2018-11-06

Applicant: Amulaire thermal technology, INC.

Inventor： Tze-Yang Yeh ,  Chun-Lung Wu

IPC: H01L23/34 ,  H01L23/48 ,  H01L21/00 ,  H01L23/373 ,  H01L23/00 ,  H01L29/739

Abstract: An IGBT heat dissipation structure includes a layer of IGBT chips, a bonding layer, a cold spray layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on top of the heat dissipation layer. The cold spray layer is disposed on top of the thermal spray layer. The bonding layer is disposed on top of the cold spray layer, and the layer of IGBT chips is disposed on top of the bonding layer.