公开(公告)号：US20150371824A1

公开(公告)日：2015-12-24

申请号：US14310969

申请日：2014-06-20

Applicant: Applied Materials, Inc.

Inventor： Steven LANE ,  Yang YANG ,  Kartik RAMASWAMY ,  Lawrence WONG

IPC: H01J37/32 ,  C23F4/00 ,  C23C16/513

CPC classification number: H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/334

Abstract: Implementations described herein inject feedstock gases into multiple zones of an inductively coupled plasma processing reactor with minimal or no effect on process skew. In one embodiment, an integrated gas and coil assembly is provided that includes an upper surface and a lower surface, a first RF field applicator coil bounded at the upper surface and the lower surface, a second RF field applicator coil circumscribed by the first RF field applicator coil and bounded at the upper surface and the lower surface and an RF shield disposed between the first and second RF field generator wherein the RF shield extends from the lower surface and past the upper surface. The RF shield may have at least one gas channel disposed therethrough.

Abstract translation: 本文所述的实施方案将原料气体注入到电感耦合等离子体处理反应器的多个区域中，对工艺偏差具有最小或没有影响。 在一个实施例中，提供集成的气体和线圈组件，其包括上表面和下表面，在上表面和下表面界定的第一RF场施加器线圈，由第一RF场限定的第二RF场施加器线圈 施加器线圈并且在上表面和下表面处限定，并且RF屏蔽设置在第一和第二RF场发生器之间，其中RF屏蔽件从下表面延伸并且经过上表面。 RF屏蔽件可以具有穿过其中布置的至少一个气体通道。

公开(公告)号：US20150042017A1

公开(公告)日：2015-02-12

申请号：US14063860

申请日：2013-10-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik RAMASWAMY ,  Troy DETRICK ,  Srinivas NEMANI ,  Ajey JOSHI

IPC: B28B1/00 ,  C23C26/02

CPC classification number: B28B1/001 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2999/00 ,  C23C16/513 ,  C23C26/02 ,  Y02P10/295 ,  B22F2202/13

Abstract: Embodiments include systems, apparatuses, and methods of three-dimensional plasma printing or processing. In one embodiment, a method includes introducing chemical precursors into one or more point plasma sources, generating plasma in the one or more point plasma sources from the chemical precursors with one or more power sources, and locally patterning a substrate disposed over a stage with the generated plasma by moving the stage with respect to the one or more point plasma sources.

Abstract translation: 实施例包括三维等离子体印刷或处理的系统，装置和方法。 在一个实施例中，一种方法包括将化学前体引入一个或多个点等离子体源中，在具有一个或多个电源的化学前体的一个或多个点等离子体源中产生等离子体，以及将设置在舞台上的衬底 通过相对于一个或多个点等离子体源移动台来产生等离子体。

公开(公告)号：US20240426888A1

公开(公告)日：2024-12-26

申请号：US18829028

申请日：2024-09-09

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY ,  Fernando SILVEIRA ,  A N M Wasekul AZAD

IPC: G01R29/08

Abstract: Disclosed herein is an electric field measurement system that includes a light source, a light sensor configured to receive electromagnetic energy transmitted from the light source, an electro-optic sensor, and a controller. The electro-optic sensor include a package comprising an electro-optic crystal disposed and at least one optical fiber. The optical fiber is configured to transmit electromagnetic energy transmitted from the light source to a surface of the electro-optic crystal, and transmit at least a portion of the electromagnetic energy transmitted to the surface of the electro-optic crystal and subsequently passed through at least a portion of the electro-optic crystal to the light sensor that is configured to generate a signal based on an attribute of the electromagnetic energy received by the light sensor from the at least one optical fiber. The controller is configured to generate a command signal based on a signal received from the light sensor.

公开(公告)号：US20240404835A1

公开(公告)日：2024-12-05

申请号：US18804929

申请日：2024-08-14

Applicant: Applied Materials, Inc.

Inventor： Leonard M. TEDESCHI ,  Kartik RAMASWAMY ,  Benjamin CE SCHWARZ ,  Changgong WANG ,  Vahid FIROUZDOR ,  Sumanth BANDA ,  Teng-Fang KUO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683

Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

公开(公告)号：US20240371605A1

公开(公告)日：2024-11-07

申请号：US18144156

申请日：2023-05-05

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  A N M Wasekul AZAD ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32 ,  H03H7/40 ,  H05H1/46

Abstract: Some embodiments are directed to a tuning circuit. The tuning circuit generally includes: a first impedance; a second impedance coupled to the first impedance; a transformer having a primary winding and a secondary winding magnetically coupled to the primary winding, wherein the primary winding is coupled to a control input for the tuning circuit; and a signal path coupled in parallel with the first impedance or the second impedance, wherein the secondary winding is part of the signal path coupled in parallel with the first impedance or the second impedance.

公开(公告)号：US20240258070A1

公开(公告)日：2024-08-01

申请号：US18104108

申请日：2023-01-31

Applicant: Applied Materials, Inc.

Inventor： Michael Andrew STEARNS ,  Kartik RAMASWAMY ,  Carlaton WONG

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32174 ,  H01J2237/3344

Abstract: Embodiments of the present disclosure include an apparatus and methods for the plasma processing of a substrate. Some embodiments are directed to a plasma processing chamber. The plasma processing chamber generally includes a planar coil region comprising a plurality of planar coils, a first power supply circuit coupled to at least two of the plurality of planar coils, a concentric coil region at least partially surrounding the planar coil region, and a second power supply circuit coupled to at least two of a plurality of concentric coils. The first power supply circuit may be configured to bias the at least two of the plurality of planar coils to affect a plasma in a center region of the plasma processing chamber, and the second power supply circuit may be configured to bias the at least two of the plurality of concentric coils to affect the plasma in an outer region.

公开(公告)号：US20240194447A1

公开(公告)日：2024-06-13

申请号：US18076725

申请日：2022-12-07

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32146

Abstract: Some embodiments are directed to a method of processing a substrate in a plasma processing system. The method generally includes tuning a first capacitor and a second capacitor of a tuning circuit to match a first impedance corresponding to a first stage of a waveform, while a frequency of a radio frequency (RF) generator is preset to a first frequency; tuning a third capacitor of the tuning circuit and the frequency of the RF generator to match a second impedance corresponding to a second stage of the waveform, wherein the frequency of the RF generator is tuned to a second frequency; recording setting values of the first frequency and the second frequency that match different impedances at different stages of the waveform; and switching between the first frequency and the second frequency to match the different impedances at the different stages of the waveform.

公开(公告)号：US20240177969A1

公开(公告)日：2024-05-30

申请号：US18059222

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yue GUO ,  Yang YANG ,  Fernando SILVEIRA ,  A.N.M. Wasekul AZAD

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J37/32146 ,  H01J2237/3341

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems, and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having three MOSFETs and three series-connected capacitors. The capacitors are connected across a DC power supply and, depending on the value of the capacitors, voltage across each of them may be varied. Each of the top two capacitors is followed by a diode. The bottom capacitor is connected to the ground. The drain terminal of each MOSFET is connected to higher potential end of the series connected capacitors. Each MOSFET is followed by a diode and the cathode ends of the diodes are connected together. An electrode is connected between the common cathode and ground.

公开(公告)号：US20230102933A1

公开(公告)日：2023-03-30

申请号：US17892211

申请日：2022-08-22

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Michael D. WILLWERTH ,  Yang YANG

IPC: G03F7/20 ,  G03F7/42

Abstract: Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.

公开(公告)号：US20220415614A1

公开(公告)日：2022-12-29

申请号：US17361178

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for boosting a voltage of an electrode in a processing chamber. An example plasma processing system includes a processing chamber, a plurality of switches, an electrode disposed in the processing chamber, a voltage source, and a capacitive element. The voltage source is selectively coupled to the electrode via one of the plurality of switches. The capacitive element is selectively coupled to the electrode via one of the plurality of switches. The capacitive element and the voltage source are coupled to the electrode in parallel. The plurality of switches are configured to couple the capacitive element and the voltage source to the electrode during a first phase, couple the capacitive element and the electrode to a ground node during a second phase, and couple the capacitive element to the electrode during a third phase.