公开(公告)号：US20240331979A1

公开(公告)日：2024-10-03

申请号：US18295144

申请日：2023-04-03

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Hamed Hajibabaeinajafabadi ,  Qi Wang ,  Andrew Metz

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32422 ,  H01J37/3244 ,  H01L21/31116 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/024 ,  H01J2237/332 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: An apparatus for plasma processing a substrate includes a substrate holder to hold the substrate in a first portion of a vacuum chamber, and a mesh assembly segregating the first portion from a second portion of the vacuum chamber along a vertical direction, where the mesh assembly includes a vertical stack of planar meshes. The apparatus includes a mesh positioning equipment to horizontally move one of the planar meshes to adjust a vertical permeability of the stack, and a plasma generation equipment to generate plasma in the second portion of the vacuum chamber.

公开(公告)号：US09653317B2

公开(公告)日：2017-05-16

申请号：US14521737

申请日：2014-10-23

Applicant: Tokyo Electron Limited

Inventor： Masaru Nishino ,  Takao Funakubo ,  Shinichi Kozuka ,  Ryosuke Niitsuma ,  Tsutomu Ito

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/3065 ,  H01L21/31116

Abstract: A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.

公开(公告)号：US09552965B2

公开(公告)日：2017-01-24

申请号：US12439352

申请日：2007-01-26

Applicant: Qiaoli Song ,  Jianhui Nan

Inventor： Qiaoli Song ,  Jianhui Nan

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H01F38/10 ,  H01F38/14

CPC classification number: H01J37/3211 ,  H01F27/28 ,  H01F38/10 ,  H01F38/14 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32183 ,  H01J2237/3344

Abstract: The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source. It can make the plasma distribute uniformly on the wafer in the reaction chamber so that the difference in chemical reaction rate on the surface of the wafer is small and the quality of the etched wafer is improved. They can be applied in a semiconductor wafer manufacturing apparatus, and they can also be adapted to other apparatuses.

Abstract translation: 本发明公开了一种电感耦合线圈和使用该线圈的电感耦合等离子体装置。 电感耦合线圈包括内部线圈和外部线圈，它们彼此相对并且同轴布置，内部线圈包括具有嵌套在一起的相同构造的多个内部各自的分支，所述多个内部各自的分支对称地布置有 相对于电感耦合线圈的轴线; 所述外部线圈包括具有嵌套在一起的相同配置的多个外部各自的分支，所述多个外部相应的分支相对于所述电感耦合线圈的轴对称地布置。 电感耦合线圈位于感应耦合等离子体装置的反应室上，并连接到RF源。 可以使等离子体均匀地分布在反应室中的晶片上，使晶片表面的化学反应速度差小，蚀刻后的晶片的品质提高。 它们可以应用于半导体晶片制造装置中，并且也可以适用于其他装置。

公开(公告)号：US20160379805A1

公开(公告)日：2016-12-29

申请号：US15258607

申请日：2016-09-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ohya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32422 ,  H01J37/32018 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/2001 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/67069 ,  Y10S156/915

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract translation: 等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体以在晶片W上进行等离子体蚀刻。该装置还包括设置在晶片周围的冷却环，设置在冷却周围的校正环 环和直接连接到校正环的可变直流电源，所述直流电压被预设为向校正环提供相对于地电位的负偏压，用于吸引等离子体中的离子并将校正环的温度增加到 补偿由于冷却环导致的目标基板的边缘附近的空间的温度的降低。

公开(公告)号：US20160358753A1

公开(公告)日：2016-12-08

申请号：US15238526

申请日：2016-08-16

Applicant: Tokyo Electron Limited

Inventor： Akira KOSHIISHI ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US09449797B2

公开(公告)日：2016-09-20

申请号：US13888754

申请日：2013-05-07

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Thorsten Lill

IPC: C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32495 ,  C23C16/4404 ,  H01J37/32477 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/0203 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/68735

Abstract: A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component. The protective liquid layer can be replenished by supplying a liquid to a liquid channel and delivering the liquid through liquid feed passages in the component. The component can be an edge ring which surrounds a semiconductor substrate supported on a substrate support in a plasma processing apparatus wherein plasma is generated and used to process the semiconductor substrate. Alternatively, the protective liquid layer can be cured or cooled sufficiently to form a solid protective layer.

Abstract translation: 等离子体处理室的组件，其在组件的等离子体暴露表面上具有保护液层。 可以通过向液体通道供应液体并通过液体供给通道将液体输送到部件中来补充保护液体层。 该组件可以是围绕在等离子体处理装置中的支撑在基板支撑件上的半导体衬底的边缘环，其中产生等离子体并用于处理半导体衬底。 或者，可以将保护液层充分固化或冷却以形成固体保护层。

公开(公告)号：US09401264B2

公开(公告)日：2016-07-26

申请号：US14043574

申请日：2013-10-01

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

Abstract translation: 等离子体系统包括RF发生器和包括阻抗匹配电路的火柴盒，其通过RF电缆耦合到RF发生器。 等离子体系统包括通过RF线耦合到火柴盒的卡盘和等离子体反应器。 RF线形成RF供应路径的一部分，RF供应路径在RF发生器之间通过火柴盒和卡盘延伸。 等离子体系统还包括耦合到阻抗匹配电路和卡盘之间的RF供给路径的相位调整电路。 相位调整电路具有耦合到RF供给路径的一端和接地的另一端。 等离子体系统包括耦合到相位调整电路的控制器。 控制器用于改变相位调整电路的参数，以基于调谐配方控制RF供应路径的阻抗。

公开(公告)号：US08790490B2

公开(公告)日：2014-07-29

申请号：US13396181

申请日：2012-02-14

Applicant: Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US20140034611A1

公开(公告)日：2014-02-06

申请号：US14055121

申请日：2013-10-16

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

IPC: B44C1/22

CPC classification number: B44C1/227 ,  C23C16/045 ,  C23C16/50 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.

Abstract translation: 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

公开(公告)号：US6077787A

公开(公告)日：2000-06-20

申请号：US533562

申请日：1995-09-25

Applicant: Donnie K. Reinhard ,  Rabindra N. Chakraborty ,  Jes Asmussen ,  Paul D. Goldman

Inventor： Donnie K. Reinhard ,  Rabindra N. Chakraborty ,  Jes Asmussen ,  Paul D. Goldman

IPC: H05H1/46 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J2237/3344 ,  Y10S438/964

Abstract: A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the microwaves. The modes and/or distance are selected depending upon the surface of the material to be etched. The etching is rapidly conducted at 0.5 mtorr to 10 torr, preferably using microwave plasma etching.

Abstract translation: 一种用于选择性控制蚀刻材料的方法，特别是通过在两（2）个或更多个射频波模式和/或距离微波源的距离之间顺序切换。 根据待蚀刻材料的表面选择模式和/或距离。 蚀刻在0.5mtorr至10torr下快速进行，优选使用微波等离子体蚀刻。