公开(公告)号：US20230317516A1

公开(公告)日：2023-10-05

申请号：US17864552

申请日：2022-07-14

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Michael Haverty ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Aaron Dangerfield ,  Michael L. McSwiney ,  Feng Q. Liu ,  Xiangjin Xie

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76831 ,  H01L21/76843 ,  H01L21/76879 ,  H01L23/5226

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a metal-carbonyl containing precursor to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20220197146A1

公开(公告)日：2022-06-23

申请号：US17464432

申请日：2021-09-01

Applicant: Applied Materials, Inc.

Inventor： Lauren Bagby ,  Stephen Weeks ,  Aaron Dangerfield ,  Lakmal Kalutarage ,  Jeffrey Anthis ,  Mark Saly ,  Regina Freed ,  Wayne French ,  Kelvin Chan

IPC: G03F7/16

Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.

公开(公告)号：US20220002869A1

公开(公告)日：2022-01-06

申请号：US17351096

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Aaron Dangerfield ,  Mark Joseph Saly ,  David Michael Thompson ,  Susmit Singha Roy ,  Regina Freed

IPC: C23C16/455 ,  G03F7/16

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：US20200149158A1

公开(公告)日：2020-05-14

申请号：US16739992

申请日：2020-01-10

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Michael Haverty ,  Aaron Dangerfield ,  Stephen Weeks ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: C23C16/40 ,  C23C16/455

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.