公开(公告)号：US20240258375A1

公开(公告)日：2024-08-01

申请号：US18160949

申请日：2023-01-27

Applicant: Applied Materials, Inc.

Inventor： Ashish Pal ,  Pratik B. Vyas ,  El Mehdi Bazizi ,  Stephen Weeks ,  Ludovico Megalini ,  Siddarth Krishnan

IPC: H01L29/10 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/105 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/66068

Abstract: A silicon carbide transistor may be formed with a channel that includes a p-doped region between n-doped source and drain regions. A counter-doped region may be formed at the top of the channel directly underneath the gate oxide. Instead of using the conventional doping levels for the p-doped region, the doping concentration may be increase to be greater than about 1e18 cm3. The transistor may also include pocket regions on one or both sides of the channel. The pocket regions may be formed in the counter-doped region and may extend up to the gate oxide. These improvements individually and/or in combination may increase the current in the channel of the transistor without significantly increasing the threshold voltage beyond acceptable operating limits.

公开(公告)号：US20250037987A1

公开(公告)日：2025-01-30

申请号：US18226579

申请日：2023-07-26

Applicant: Applied Materials, Inc.

Inventor： Stephen Weeks ,  Hansel Lo ,  John Tolle ,  Christopher S. Olsen ,  Siddarth Krishnan

IPC: H01L21/02

Abstract: Exemplary semiconductor processing methods may include performing a pre-treatment on a substrate housed within a processing region of a semiconductor processing chamber. The substrate may include a layer of silicon-and-carbon-containing material. The pre-treatment may remove native oxide or residue from a surface of the layer of silicon-and-carbon-containing material. The methods may include providing a silicon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the silicon-containing precursor. The contacting may deposit a layer of silicon-containing material on the layer of silicon-and-carbon-containing material. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may oxidize the layer of silicon-containing material to form a layer of silicon-and-oxygen-containing material.

公开(公告)号：US20220197146A1

公开(公告)日：2022-06-23

申请号：US17464432

申请日：2021-09-01

Applicant: Applied Materials, Inc.

Inventor： Lauren Bagby ,  Stephen Weeks ,  Aaron Dangerfield ,  Lakmal Kalutarage ,  Jeffrey Anthis ,  Mark Saly ,  Regina Freed ,  Wayne French ,  Kelvin Chan

IPC: G03F7/16

Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.

公开(公告)号：US20200149158A1

公开(公告)日：2020-05-14

申请号：US16739992

申请日：2020-01-10

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Michael Haverty ,  Aaron Dangerfield ,  Stephen Weeks ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: C23C16/40 ,  C23C16/455

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.