公开(公告)号：US09865706B2

公开(公告)日：2018-01-09

申请号：US15277394

申请日：2016-09-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Chun Yan

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L21/02057 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/8252 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/78681 ,  H01L29/78696

Abstract: Embodiments described herein generally relate to methods and structures for forming precise fins comprising Group III-V elements on a silicon substrate. A buffer layer is deposited in a trench formed in the dielectric material on a substrate. An isolation layer is then deposited over the buffer layer. A portion of the isolation layer is removed allowing for a precisely sized Group III-V channel layer to be deposited on the isolation layer.

公开(公告)号：US09805914B2

公开(公告)日：2017-10-31

申请号：US14698556

申请日：2015-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Chun Yan ,  Jim Zhongyi He ,  Xinyu Bao ,  Teng-Fang Kuo ,  Zhenwen Ding ,  Adam Lane

IPC: B08B6/00 ,  C25F1/00 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/02538 ,  H01L21/02661

Abstract: Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer.

公开(公告)号：US09653291B2

公开(公告)日：2017-05-16

申请号：US14540104

申请日：2014-11-13

Applicant: Applied Materials, Inc.

Inventor： Chun Yan ,  Xinyu Bao

IPC: H01L21/306 ,  H01L21/02 ,  B08B7/00 ,  B08B7/04 ,  B08B5/00

CPC classification number: H01L21/02661 ,  B08B5/00 ,  B08B7/0035 ,  B08B7/0071 ,  B08B7/04 ,  H01L21/02046 ,  H01L21/0206 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/67115

Abstract: Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.

公开(公告)号：US09472416B2

公开(公告)日：2016-10-18

申请号：US14506058

申请日：2014-10-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Jim Zhongyi He ,  Ping Han Hsieh ,  Melitta Manyin Hon ,  Chun Yan ,  Xuefeng Hua

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02057 ,  H01L21/32132 ,  H01L21/32137

Abstract: Methods for surface interface engineering in semiconductor fabrication are provided herein. In some embodiments, a method of processing a substrate disposed atop a substrate support in a processing volume of a processing chamber includes: generating an ion species from an inductively coupled plasma formed within the processing volume of the processing chamber from a first process gas; exposing a first layer of the substrate to the ion species to form an ammonium fluoride (NH4F) film atop the first layer, wherein the first layer comprises silicon oxide; and heating the substrate to a second temperature at which the ammonium fluoride film reacts with the first layer to selectively etch the silicon oxide.

Abstract translation: 本文提供半导体制造中的表面界面工程方法。 在一些实施例中，处理设置在处理室的处理体积中的衬底支撑件顶部的衬底的方法包括：从处理室的处理容积中形成的电感耦合等离子体从第一工艺气体产生离子物质; 将所述衬底的第一层暴露于所述离子种类以在所述第一层顶部形成氟化铵（NH 4 F）膜，其中所述第一层包含氧化硅; 以及将所述衬底加热至所述氟化铵膜与所述第一层反应的第二温度以选择性地蚀刻所述氧化硅。