中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

27 records (took 0.022 seconds)

    HIGH TEMPERATURE RF HEATER PEDESTALS
    21.
    发明申请
    HIGH TEMPERATURE RF HEATER PEDESTALS 审中-公开

    公开(公告)号：US20200090912A1

    公开(公告)日：2020-03-19

    申请号：US16132806

    申请日：2018-09-17

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Soonam Park ,  David Benjaminson ,  Xikun Wang ,  Dmitry Lubomirsky

    IPC: H01J37/32 ,  H01L21/687 ,  C23C16/458 ,  C23C16/455

    Abstract: Semiconductor processing systems are described, which may include a substrate support assembly having a substrate support surface. Exemplary substrate support assemblies may include a ceramic heater defining the substrate support surface. The assemblies may include a ground plate on which the ceramic heater is seated. The assemblies may include a stem with which the ground plate is coupled. The assemblies may include an electrode embedded within the ceramic heater at a depth from the substrate support surface. The chambers or systems may also include an RF match configured to provide an AC current and an RF power through the stem to the electrode. The RF match may be coupled with the substrate support assembly along the stem. The substrate support assembly and RF match may be vertically translatable within the semiconductor processing system.

    Bolted wafer chuck thermal management systems and methods for wafer processing systems
    23.
    发明授权
    Bolted wafer chuck thermal management systems and methods for wafer processing systems 有权

    公开(公告)号：US10147620B2

    公开(公告)日：2018-12-04

    申请号：US15581545

    申请日：2017-04-28

    Applicant: Applied Materials, Inc.

    Inventor： David Benjaminson ,  Dmitry Lubomirsky ,  Ananda Seelavanth Math ,  Saravanakumar Natarajan ,  Shubham Chourey

    IPC: H01L21/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/324 ,  H01J37/32

    Abstract: A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.

    THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS
    25.
    发明申请
    THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS 审中-公开

    公开(公告)号：US20170229329A1

    公开(公告)日：2017-08-10

    申请号：US15581589

    申请日：2017-04-28

    Applicant: Applied Materials, Inc.

    Inventor： David Benjaminson ,  Dmitry Lubomirsky

    IPC: H01L21/67 ,  H01L21/66 ,  H01L21/687

    CPC classification number: H01L21/67103 ,  H01L21/3247 ,  H01L21/68785 ,  H01L22/12

    Abstract: A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that is at least one-half of the puck radius. A method of processing a wafer includes processing the wafer with a first process that provides a first center-to-edge process variation, and subsequently, processing the wafer with a second process that provides a second center-to-edge process variation that substantially compensates for the first center-to-edge process variation.

    THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS
    27.
    发明申请
    THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS 有权
    热处理系统的热管理系统和方法

    公开(公告)号：US20170040190A1

    公开(公告)日：2017-02-09

    申请号：US14820365

    申请日：2015-08-06

    Applicant: Applied Materials, Inc.

    Inventor： David Benjaminson ,  Dmitry Lubomirsky

    IPC: H01L21/67 ,  H01L21/687 ,  H01L21/324

    CPC classification number: H01L21/67103 ,  H01L21/3247 ,  H01L21/68785 ,  H01L22/12

    Abstract: A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that is at least one-half of the puck radius. A method of processing a wafer includes processing the wafer with a first process that provides a first center-to-edge process variation, and subsequently, processing the wafer with a second process that provides a second center-to-edge process variation that substantially compensates for the first center-to-edge process variation.

    Abstract translation: 工件保持器包括具有圆柱形轴线的圆盘，圆柱形轴线的半径和厚度。 至少顶点的圆顶基本上是平面的，并且圆盘定义了一个或多个热断裂。 每个热断裂是与圆柱形盘的顶表面和底表面中的至少一个相交的径向凹槽。 径向凹槽具有延伸穿过至少一半的圆盘厚度的热断裂深度，以及至少是圆盘半径的一半的热断裂半径。 处理晶片的方法包括用提供第一中心到边缘工艺变化的第一工艺来处理晶片，并且随后用提供基本上补偿的第二中心到边缘工艺变化的第二工艺来处理晶片 用于第一个中心到边缘过程变化。

Patent Agency Ranking