公开(公告)号：US20230008922A1

公开(公告)日：2023-01-12

申请号：US17371549

申请日：2021-07-09

Applicant: Applied Materials, Inc.

Inventor： Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Madhu Santosh Kumar Mutyala ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/683 ,  H01J37/32 ,  C23C16/458

Abstract: Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.

公开(公告)号：US20220122811A1

公开(公告)日：2022-04-21

申请号：US17072673

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Sanjay Kamath ,  Deenesh Padhi ,  Mayur Govind Kulkarni ,  Arun Thottappayil

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/40 ,  C23C16/50

Abstract: Exemplary deposition methods may include forming a plasma of an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The processing region may house a semiconductor substrate on a substrate support. The methods may include, while maintaining the plasma of the oxygen-containing precursor, flowing a silicon-containing precursor through a faceplate into the processing region of the semiconductor processing chamber. The faceplate may have an impedance of at least 5.75 deciohm. The methods may include depositing a silicon-containing material on the semiconductor substrate.

公开(公告)号：US20210388495A1

公开(公告)日：2021-12-16

申请号：US16902911

申请日：2020-06-16

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Mayur Govind Kulkarni

IPC: C23C16/44 ,  H01L21/67 ,  H01L21/033 ,  H01L21/02 ,  H01J37/32 ,  C23C16/26 ,  C23C16/505

Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The chambers may include a foreline conduit offset from a center of the base for exhausting a gas from the chamber body, and an exhaust volume coupled to the foreline conduit. The chambers may include a pumping plate comprising a central aperture through which the shaft extends, and further comprising exit apertures for directing at least a portion of the gas from the chamber body to the exhaust volume. The exit apertures may be disposed at locations opposite the foreline conduit so as to reduce nonuniformity in gas flow.