公开(公告)号：US20210159073A1

公开(公告)日：2021-05-27

申请号：US16698500

申请日：2019-11-27

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Sanjay Kamath ,  Deenesh Padhi

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

Abstract: Exemplary deposition methods may include forming a plasma of an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The processing region may house a semiconductor substrate on a substrate support. The methods may include, while maintaining the plasma of the oxygen-containing precursor, flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber at a first flow rate. The methods may include ramping the first flow rate of the silicon-containing precursor over a period of time to a second flow rate greater than the first flow rate. The methods may include depositing a silicon-containing material on the semiconductor substrate.

公开(公告)号：US20210134592A1

公开(公告)日：2021-05-06

申请号：US17081773

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Sanjay Kamath ,  Deenesh Padhi

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  C23C16/50 ,  C23C16/40

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a carrier precursor to a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the carrier precursor within the processing region of the semiconductor processing chamber. The methods may include depositing a first amount of a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The depositing may occur at a first chamber pressure. The methods may include adjusting the first chamber pressure to a second chamber pressure less than the first chamber pressure. The methods may include depositing a second amount of the silicon-containing material on the first amount of the silicon-containing material.

公开(公告)号：US10410869B2

公开(公告)日：2019-09-10

申请号：US15633366

申请日：2017-06-26

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Kelvin Chan ,  Hien Minh Le ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Karthik Janakiraman

IPC: C23C16/06 ,  H01L21/3205 ,  C23C16/505 ,  H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  C23C16/02 ,  C23C16/40 ,  C23C28/00 ,  H01L27/11582

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US20160093488A1

公开(公告)日：2016-03-31

申请号：US14502492

申请日：2014-09-30

Applicant: Applied Materials, Inc.

Inventor： Kiran V. Thadani ,  Abhijit Basu Mallick ,  Sanjay Kamath

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/762

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/76224 ,  H01L21/76837

Abstract: Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing.

Abstract translation: 描述了在图案化衬底上形成可流动的低k电介质膜的方法。 该膜可以是硅 - 碳 - 氧（Si-C-O）层，其中硅和碳成分来自含硅和碳的前体，而氧可以来自在远程等离子体区域中激活的含氧前体 。 沉积后不久，在固化之前通过暴露于含氢和氮的前体如氨来处理硅 - 碳 - 氧层。 该处理可以从硅 - 碳 - 氧层去除残留的水分，并且可以使晶格在固化和随后的加工过程中更有弹性。 该处理可以在随后的处理期间减小硅 - 碳 - 氧层的收缩。

公开(公告)号：US20220119952A1

公开(公告)日：2022-04-21

申请号：US17074961

申请日：2020-10-20

Applicant: Applied Materials, Inc.

Inventor： Rana Howlader ,  Hang Yu ,  Madhu Santosh Kumar Mutyala ,  Zheng John Ye ,  Abhigyan Keshri ,  Sanjay Kamath ,  Daemian Raj Benjamin Raj ,  Deenesh Padhi

IPC: C23C16/50 ,  C23C16/40 ,  H01L21/02 ,  C23C16/458 ,  C23C16/455

Abstract: Exemplary deposition methods may include electrostatically chucking a semiconductor substrate at a first voltage within a processing region of a semiconductor processing chamber. The methods may include performing a deposition process. The deposition process may include forming a plasma within the processing region of the semiconductor processing chamber. The methods may include halting formation of the plasma within the semiconductor processing chamber. The methods may include, simultaneously with the halting, increasing the first voltage of electrostatic chucking to a second voltage. The methods may include purging the processing region of the semiconductor processing chamber.

公开(公告)号：US20210183678A1

公开(公告)日：2021-06-17

申请号：US16717245

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Sanjay Kamath ,  Deenesh Padhi

IPC: H01L21/683 ,  H01L21/67

Abstract: Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chambers may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.

公开(公告)号：US11817313B2

公开(公告)日：2023-11-14

申请号：US16782933

申请日：2020-02-05

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Sanjay Kamath ,  Deenesh Padhi

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/50

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/50 ,  H01J37/32834 ,  H01L21/02164 ,  H01L21/02216 ,  H01J2237/3321

Abstract: Exemplary deposition methods may include forming a plasma of a silicon-containing precursor and at least one additional precursor within a processing region of a semiconductor processing chamber. The processing region may house a semiconductor substrate on a substrate support. The methods may include depositing material on the semiconductor substrate to a target thickness. The methods may include halting delivery of the silicon-containing precursor while maintaining the plasma with the one or more precursors. The methods may include purging the processing region of the semiconductor processing chamber.

公开(公告)号：US20220122873A1

公开(公告)日：2022-04-21

申请号：US17073671

申请日：2020-10-19

Applicant: Applied Materials, Inc.

Inventor： Jian Li ,  Dmitry A. Dzilno ,  Juan Carlos Rocha-Alvarez ,  Paul L. Brillhart ,  Akshay Gunaji ,  Mayur Govind Kulkarni ,  Sandeep Bindgi ,  Sanjay Kamath ,  Kwangduk Douglas Lee ,  Zongbin Wang ,  Yubin Zhang ,  Yong Xiang Lim

IPC: H01L21/683 ,  C23C16/50 ,  H01J37/32 ,  C23C16/458 ,  H01L21/687

Abstract: Exemplary semiconductor processing systems include a processing chamber, a power supply, and a chuck disposed at least partially within the processing chamber. The chuck includes a chuck body defining a vacuum port. The chuck also includes first and second coplanar electrodes embedded in the chuck body and connected to the power supply. In some examples, coplanar electrodes include concentric electrodes defining a concentric gap in between. Exemplary semiconductor processing methods may include activating the power supply for the electrostatic chuck to secure a semiconductor substrate on the body of the chuck and/or activating the vacuum port defined by the body of the electrostatic chuck. Some processing can be carried out at increased pressure, while other processing can be carried out at reduced pressure with increased chucking voltage.

公开(公告)号：US11270903B2

公开(公告)日：2022-03-08

申请号：US16717245

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Sanjay Kamath ,  Deenesh Padhi

IPC: H01T23/00 ,  H01L21/683 ,  H01L21/67

Abstract: Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chambers may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.

公开(公告)号：US20210082732A1

公开(公告)日：2021-03-18

申请号：US17014671

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Sanjay Kamath ,  Deenesh Padhi

IPC: H01L21/683 ,  H01L21/311 ,  H01J37/32

Abstract: Exemplary deposition methods may include electrostatically chucking a semiconductor substrate at a first voltage within a processing region of a semiconductor processing chamber. The methods may include performing a deposition process. The deposition process may include forming a plasma within the processing region of the semiconductor processing chamber. The methods may include halting formation of the plasma within the semiconductor processing chamber. The methods may include, simultaneously with the halting, increasing the first voltage of electrostatic chucking to a second voltage. The methods may include purging the processing region of the semiconductor processing chamber.