公开(公告)号：US20190259652A1

公开(公告)日：2019-08-22

申请号：US16393357

申请日：2019-04-24

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Kelvin Chan ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Pramit Manna

IPC: H01L21/762 ,  H01L29/43 ,  H01L21/28 ,  H01L21/32 ,  H01L21/8234

Abstract: Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.

公开(公告)号：US10347488B2

公开(公告)日：2019-07-09

申请号：US15268797

申请日：2016-09-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Wei Tang ,  Pramit Manna ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/033

Abstract: Methods for forming a titanium-containing hard mask film on a substrate surface by exposing the substrate surface to a titanium-containing precursor. The titanium-containing hard mask comprises one or more of silicon, oxygen or carbon atoms and, optionally, nitrogen atoms.

公开(公告)号：US20190185983A1

公开(公告)日：2019-06-20

申请号：US16225240

申请日：2018-12-19

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: C23C8/10 ,  C23C16/06

CPC classification number: C23C8/10 ,  C23C16/06

Abstract: Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.

公开(公告)号：US20180323068A1

公开(公告)日：2018-11-08

申请号：US15969119

申请日：2018-05-02

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Yihong Chen ,  Ziqing Duan ,  Rui Cheng ,  Shishi Jiang

IPC: H01L21/033

Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.

公开(公告)号：US20180298492A1

公开(公告)日：2018-10-18

申请号：US15978930

申请日：2018-05-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Darshan Thakare ,  Abhijit Basu Mallick ,  Pramit Manna ,  Robert Jan Visser ,  Prerna Sonthalia Goradia ,  Nilesh Chimanrao Bagul

IPC: C23C16/448 ,  C23C16/40 ,  C23C16/34 ,  H01L21/02

CPC classification number: C23C16/4486 ,  B05D1/02 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02153 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02271

Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

公开(公告)号：US10074534B2

公开(公告)日：2018-09-11

申请号：US15636239

申请日：2017-06-28

Applicant: Applied Materials, Inc.

Inventor： Swayambhu P. Behera ,  Shahid Shaikh ,  Pramit Manna ,  Mandar B. Pandit ,  Tersem Summan ,  Patrick Reilly ,  Deenesh Padhi ,  Bok Hoen Kim ,  Heung Lak Park ,  Derek R. Witty

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  C23C16/26 ,  C23C16/50

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80° C. to about 550° C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.

公开(公告)号：US10014174B2

公开(公告)日：2018-07-03

申请号：US15602862

申请日：2017-05-23

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Pramit Manna ,  Li Yan Miao ,  Deenesh Padhi ,  Bok Hoen Kim ,  Christopher Dennis Bencher

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31138 ,  H01L2221/00

Abstract: Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

公开(公告)号：US20170114453A1

公开(公告)日：2017-04-27

申请号：US15297257

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Rui Cheng ,  Pramit Manna ,  Kelvin Chan ,  Karthik Janakiraman ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: C23C16/24 ,  C23C16/455

CPC classification number: C23C16/24 ,  C23C16/04 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/4584

Abstract: Methods for depositing film comprising cyclical exposure of a substrate surface to a precursor and a degas environment to remove gas evolved from the film. Some embodiments further comprise the incorporation poisoning the top of a feature to inhibit film growth at the top of the feature. Some embodiments further comprising etching a portion of the film deposited at the top of a feature between cycles to increase gap-fill uniformity.

公开(公告)号：US09406509B2

公开(公告)日：2016-08-02

申请号：US14161313

申请日：2014-01-22

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Abhijit Basu Mallick ,  Mukund Srinivasan

IPC: H01L21/31 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0271 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/31133 ,  H01L21/31144 ,  Y10T428/24802

Abstract: Easily removable heteroatom-doped carbon-containing layers are deposited. The carbon-containing layers may be used as hardmasks. The heteroatom-doped carbon-containing hardmasks have high etch selectivity and density and also a low compressive stress, which will reduce or eliminate problems with wafer bow. Heteroatoms incorporated into the hardmask include sulfur, phosphorous, nitrogen, oxygen, and fluorine, all of which have low reactivity towards commonly used etchants. When sulfur is used as the heteroatom, the hardmask is easily removed, which simplifies the fabrication of NAND devices, DRAM devices, and other devices.

Abstract translation: 沉积易于除去的杂原子掺杂的含碳层。 含碳层可以用作硬掩模。 掺杂掺杂碳的硬掩模具有高蚀刻选择性和密度以及低压缩应力，这将减少或消除晶片弓的问题。 掺入硬掩模的杂原子包括硫，磷，氮，氧和氟，所有这些对于常用的蚀刻剂具有低反应性。 当使用硫作为杂原子时，硬掩模容易去除，这简化了NAND​​器件，DRAM器件和其它器件的制造。

公开(公告)号：US09337051B2

公开(公告)日：2016-05-10

申请号：US14799374

申请日：2015-07-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Bok Hoen Kim ,  Deenesh Padhi ,  Li Yan Miao ,  Pramit Manna ,  Christopher Dennis Bencher ,  Mehul B. Naik ,  Huixiong Dai ,  Christopher S. Ngai ,  Daniel Lee Diehl

IPC: H01L21/00 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/3088 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144

Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

Abstract translation: 本公开的实施例通常提供在与上覆光致抗蚀剂层光学匹配的硬掩模中形成减小尺寸图案的方法。 该方法通常包括在低于光致抗蚀剂的分解温度的温度下，在图案化的光致抗蚀剂和下面的硬掩模的场区域，侧壁和底部上施加尺寸收缩的保形碳层。 本文的方法和实施例还涉及通过蚀刻工艺从图案化的光致抗蚀剂和硬掩模的底部部分去除保形碳层，以暴露硬掩模，在底部蚀刻暴露的硬掩模基板，随后同时去除 保形碳层，光致抗蚀剂等碳质成分。 因此产生了用于进一步模式转移的尺寸减小特征的硬掩模。