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    Dopant precursors for mono-layer doping
    21.
    发明授权
    Dopant precursors for mono-layer doping 有权

    公开(公告)号：US09929014B2

    公开(公告)日：2018-03-27

    申请号：US15037940

    申请日：2014-11-22

    Applicant: Entegris, Inc.

    Inventor： Thomas M. Cameron ,  Emanuel I. Cooper ,  Sung Han

    IPC: H01L21/22 ,  H01L21/225 ,  H01L21/228

    CPC classification number: H01L21/2225 ,  H01L21/2254 ,  H01L21/228

    Abstract: A doping process is described, which includes applying to a substrate a film of dopant material that bonds to the substrate by at least one of hydrogen bonding and covalent bonding; encapsulating the film on the substrate with an encapsulant material, and subjecting the encapsulated film to rapid thermal processing to cause dopant from the dopant material to migrate into the substrate. The film of dopant material is applied from a dopant composition selected from among: (i) dopant compositions comprising an aqueous or glycol solution comprising an inorganic dopant compound; (ii) dopant compositions comprising an arsenic, phosphorus, boron, or antimony compound in which ligands or moieties coordinated to an arsenic, phosphorus, boron, or antimony central atom have coordination bond energies that are lower than those associated with coordinating bonds of said central atom to oxygen or carbon; (iii) dopant compositions comprising a coordinated moiety that selectively and covalently bonds to the substrate; (iv) dopant compositions comprising a compound that undergoes hydrolysis and alcoholysis to covalently bond a dopant functionality to the substrate in said film of dopant material; (v) dopant compositions comprising precursor vapor of an organodopant compound; (vi) dopant compositions interactive with a surface functionality of the substrate to bind the dopant composition to the substrate, wherein the substrate comprises a silicon surface comprising said surface functionality; (vii) dopant compositions interactive with the substrate to covalently bond with a pretreated and/or modified silicon surface thereof; and (viii) dopant compositions interactive with the substrate to bond with the substrate on a silicon surface thereof that has been modified by a treatment comprising at least one of: (A) contacting the silicon surface with a chemical solution; (B) exposing the silicon surface to plasma; and (C) exposing the silicon surface to ultraviolet radiation.

    DOPING OF ZrO2 FOR DRAM APPLICATIONS
    22.
    发明申请
    DOPING OF ZrO2 FOR DRAM APPLICATIONS 审中-公开
    用于DRAM应用的ZrO2的掺杂

    公开(公告)号：US20160343795A1

    公开(公告)日：2016-11-24

    申请号：US15161217

    申请日：2016-05-21

    Applicant: Entegris, Inc.

    Inventor： Julie Cissell ,  Chongying Xu ,  Thomas M. Cameron ,  William Hunks ,  David W. Peters

    IPC: H01L49/02 ,  C23C16/455 ,  H01L21/02

    CPC classification number: H01L28/40 ,  C23C16/45525 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228

    Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN=Nb(NEt2)3; tBuN=Nb(NMe2)3; t-BuN=Nb(NEtMe)3; t-AmN=Nb(NEt2)3; t-AmN=Nb(NEtMe)3; t-AmN=Nb(NMe2)3; t-AmN=Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCl4; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4-x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N′-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

    Abstract translation: 一种形成电介质材料的方法，包括使用选自Ti（NMe 2）4的掺杂剂前体掺杂氧化锆材料; Ti（NMeEt）4; Ti（NEt2）4; TiCl4; tBuN = Nb（NEt2）3; tBuN = Nb（NMe2）3; t-BuN = Nb（NEtMe）3; t-AmN = Nb（NEt2）3; t-AmN = Nb（NEtMe）3; t-AmN = Nb（NMe2）3; t-AmN = Nb（OBu-t）3; Nb-13; Nb（NEt2）4; Nb（NEt2）5; Nb（N（CH 3）2）5; Nb（OC2H5）5; Nb（thd）（OPr-i）4; SiH（OMe）3; SiCl4; Si（NMe2）4; （Me 3 Si）2 NH GeRax（ORb）4-x其中x为0至4，每个R a独立地选自H或C 1 -C 8烷基，并且每个R b独立地选自C 1 -C 8烷基; GeCl4; Ge（NRa 2）4，其中每个R a独立地选自H和C 1 -C 8烷基; 和（Rb 3 Ge）2 NH，其中每个R b独立地选自C 1 -C 8烷基; 双（N，N'-二异丙基-1,3-丙二酰胺）钛; 和四（异丙基甲基氨基）钛; 其中Me是甲基，Et是乙基，Pr-i是异丙基，t-Bu是叔丁基，t-Am是叔戊基，thd是2,2,6,6-四甲基-3,5-庚二酮酸。 本公开的掺杂氧化锆材料有用地用于铁电电容器和动态随机存取存储器（DRAM）器件中。

    PRECURSORS FOR SELECTIVE DEPOSITION OF SILICON-CONTAINING FILMS
    23.
    发明申请
    PRECURSORS FOR SELECTIVE DEPOSITION OF SILICON-CONTAINING FILMS 有权

    公开(公告)号：US20250074927A1

    公开(公告)日：2025-03-06

    申请号：US18809639

    申请日：2024-08-20

    Applicant: ENTEGRIS, INC.

    Inventor： Drew Michael Hood ,  Thomas M. Cameron ,  Bryan C. Hendrix

    IPC: C07F7/02 ,  C07F7/18 ,  C23C16/40 ,  C23C16/455

    Abstract: Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising silicon-containing films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.

    PRECURSORS CONTAINING FLUORINATED ALKOXIDES AND AMIDES
    26.
    发明公开
    PRECURSORS CONTAINING FLUORINATED ALKOXIDES AND AMIDES 审中-公开

    公开(公告)号：US20240092816A1

    公开(公告)日：2024-03-21

    申请号：US18240873

    申请日：2023-08-31

    Applicant: ENTEGRIS, INC.

    Inventor： Drew Michael Hood ,  Thomas M. Cameron

    IPC: C07F17/00 ,  C07F7/00 ,  C07F7/28

    CPC classification number: C07F17/00 ,  C07F7/003 ,  C07F7/28

    Abstract: The present disclosure relates to the field of precursors, more specifically precursors containing at least one fluorinated group. In some embodiments, the precursors are hafnium, zirconium, and titanium bis(cyclopentadienyl) precursors containing fluorinated alkoxides and amides. In some embodiments, the present disclosure relates to using precursors for deposition of group 4 containing thin films, such as HfOx, ZrOx, and TiOx film applications. These thin films can be used in a variety of applications including semiconductor device structures. The compounds of the present disclosure have been developed and synthesized to generate compounds that provide improvements in film applications, such as HfOx, ZrOx, and TiOx film applications. The improvements to the compounds of the present disclosure include increased molecule stability at delivery temperature and deposition temperature, improvements related to precursor film impurity levels, molecule volatility, molecule melting point, and step coverage.

    PROCESS FOR PREPARING ORGANOTIN COMPOUNDS
    28.
    发明申请
    PROCESS FOR PREPARING ORGANOTIN COMPOUNDS 有权

    公开(公告)号：US20220402945A1

    公开(公告)日：2022-12-22

    申请号：US17843021

    申请日：2022-06-17

    Applicant: ENTEGRIS, INC.

    Inventor： David M. Ermert ,  Thomas M. Cameron

    IPC: C07F7/22

    Abstract: The invention provides a facile process for preparing certain organotin compounds having alkyl and aryl substituents. These compounds are useful as intermediates in the synthesis of certain alkylamino- and alkoxy-substituted alkyl tin compounds, which are in turn useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

    Process for preparing organotin compounds
    29.
    发明授权
    Process for preparing organotin compounds 有权

    公开(公告)号：US11358975B2

    公开(公告)日：2022-06-14

    申请号：US17366470

    申请日：2021-07-02

    Applicant: ENTEGRIS, INC.

    Inventor： David M. Ermert ,  Thomas M. Cameron ,  David Kuiper ,  Thomas H. Baum

    IPC: C07F7/22

    Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

    DOPANT PRECURSORS FOR MONO-LAYER DOPING
    30.
    发明申请
    DOPANT PRECURSORS FOR MONO-LAYER DOPING 审中-公开

    公开(公告)号：US20160276155A1

    公开(公告)日：2016-09-22

    申请号：US15037940

    申请日：2014-11-22

    Applicant: ENTEGRIS, INC.

    Inventor： Thomas M. Cameron ,  Emanuel I. Cooper ,  Sung Han

    IPC: H01L21/22 ,  H01L21/228 ,  H01L21/225

    CPC classification number: H01L21/2225 ,  H01L21/2254 ,  H01L21/228

    Abstract: A doping process is described, which includes applying to a substrate a film of dopant material that bonds to the substrate by at least one of hydrogen bonding and covalent bonding; encapsulating the film on the substrate with an encapsulant material, and subjecting the encapsulated film to rapid thermal processing to cause dopant from the dopant material to migrate into the substrate. The film of dopant material is applied from a dopant composition selected from among: (i) dopant compositions comprising an aqueous or glycol solution comprising an inorganic dopant compound; (ii) dopant compositions comprising an arsenic, phosphorus, boron, or antimony compound in which ligands or moieties coordinated to an arsenic, phosphorus, boron, or antimony central atom have coordination bond energies that are lower than those associated with coordinating bonds of said central atom to oxygen or carbon; (iii) dopant compositions comprising a coordinated moiety that selectively and covalently bonds to the substrate; (iv) dopant compositions comprising a compound that undergoes hydrolysis and alcoholysis to covalently bond a dopant functionality to the substrate in said film of dopant material; (v) dopant compositions comprising precursor vapor of an organodopant compound; (vi) dopant compositions interactive with a surface functionality of the substrate to bind the dopant composition to the substrate, wherein the substrate comprises a silicon surface comprising said surface functionality; (vii) dopant compositions interactive with the substrate to covalently bond with a pretreated and/or modified silicon surface thereof; and (viii) dopant compositions interactive with the substrate to bond with the substrate on a silicon surface thereof that has been modified by a treatment comprising at least one of: (A) contacting the silicon surface with a chemical solution; (B) exposing the silicon surface to plasma; and (C) exposing the silicon surface to ultraviolet radiation.

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