公开(公告)号：US20250051372A1

公开(公告)日：2025-02-13

申请号：US18785117

申请日：2024-07-26

Applicant: ENTEGRIS, INC.

Inventor： Claudia Fafard ,  David M. Ermert ,  Drew Michael Hood

IPC: C07F7/22 ,  C07F7/08 ,  C07F7/28

Abstract: Methods are provided. A method comprises contacting a tin (IV) compound with a reagent to form at least one reaction product. The regent comprises at least one of a metal alkoxide compound, a metal amide compound, or any combination thereof. The at least one reaction product comprises at least one of a substituted tin (IV) amide compound, a substituted tin (IV) alkoxide compound, or any combination thereof. Various compositions and various compounds, among other things, are also provided.

公开(公告)号：US12173014B2

公开(公告)日：2024-12-24

申请号：US18084237

申请日：2022-12-19

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas H. Baum

IPC: C07F11/00 ,  C23C16/40

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds, set forth below as Formula (I), useful in the vapor deposition of certain Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. Also provided is a process for the preparation of such precursor compounds. Additionally, the invention provides a method for vapor deposition of Group VI metals onto microelectronic device substrates utilizing the precursor compounds of the invention.

公开(公告)号：US20240317781A1

公开(公告)日：2024-09-26

申请号：US18612002

申请日：2024-03-21

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron ,  Claudia Fafard

IPC: C07F7/22

CPC classification number: C07F7/2208

Abstract: A method of synthesis of a mono-substituted tin compound comprises contacting a stannous halide with a metalated reactant to form a stannylene compound; contacting the stannylene compound with a halide compound to form a stannic compound; and contacting the stannic compound with a reactant to form a mono-substituted tin compound via ligand exchange. A composition comprising the mono-substituted tin compound is also provided, among other compositions and methods.

公开(公告)号：US20240140819A1

公开(公告)日：2024-05-02

申请号：US18404334

申请日：2024-01-04

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Robert L. Wright, JR. ,  Thomas H. Baum ,  Bryan C. Hendrix

IPC: C01G39/04 ,  C01G41/04

CPC classification number: C01G39/04 ,  C01G41/04 ,  C01P2002/72

Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.

公开(公告)号：US11685752B2

公开(公告)日：2023-06-27

申请号：US17586834

申请日：2022-01-28

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas H. Baum ,  Thomas M. Cameron

IPC: C07F7/22

CPC classification number: C07F7/2284 ,  C07F7/2296

Abstract: Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

公开(公告)号：US12258356B2

公开(公告)日：2025-03-25

申请号：US18373868

申请日：2023-09-27

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas H. Baum ,  Robert Wright, Jr.

IPC: C07F11/00 ,  H01L21/02 ,  H01L21/3205

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

公开(公告)号：US20240352051A1

公开(公告)日：2024-10-24

申请号：US18641306

申请日：2024-04-19

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Claudia Fafard ,  Thomas M. Cameron

IPC: C07F7/22

CPC classification number: C07F7/2284

Abstract: Multi-nuclear tin compounds and related methods are provided. A method comprises obtaining a mono-substituted tin (IV) amide compound; obtaining a silanol compound; and contacting the mono-substituted tin (IV) amide compound with the silanol compound to form a multi-nuclear tin compound. A composition comprises a multi-nuclear tin compound.

公开(公告)号：US20240174699A1

公开(公告)日：2024-05-30

申请号：US18389209

申请日：2023-11-13

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron ,  Claudia Fafard

IPC: C07F7/22 ,  C23C16/40 ,  C23C16/455

CPC classification number: C07F7/2284 ,  C23C16/407 ,  C23C16/45553

Abstract: Precursors useful in the formation of tin-containing films are provided. The precursors comprise a functionalized tin compound in which one or more ligands are coordinated to Sn, and the Sn is functionalized with at least one functional group. Methods for forming the precursors and methods for forming tin-containing films using the precursors are further provided.

公开(公告)号：US20230160058A1

公开(公告)日：2023-05-25

申请号：US17992166

申请日：2022-11-22

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  David Kuiper ,  Thomas M. Cameron

IPC: C07F7/22 ,  C23C16/455 ,  C23C16/18

CPC classification number: C07F7/2284 ,  C23C16/45553 ,  C23C16/18

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

公开(公告)号：US20220402945A1

公开(公告)日：2022-12-22

申请号：US17843021

申请日：2022-06-17

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron

IPC: C07F7/22

Abstract: The invention provides a facile process for preparing certain organotin compounds having alkyl and aryl substituents. These compounds are useful as intermediates in the synthesis of certain alkylamino- and alkoxy-substituted alkyl tin compounds, which are in turn useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.