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    Organotin precursor compounds
    1.
    发明授权
    Organotin precursor compounds 有权

    公开(公告)号：US12221691B2

    公开(公告)日：2025-02-11

    申请号：US17992166

    申请日：2022-11-22

    Applicant: ENTEGRIS, INC.

    Inventor： David M. Ermert ,  David Kuiper ,  Thomas M. Cameron

    IPC: C23C16/18 ,  C07F7/22 ,  C23C16/455

    Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

    Process for preparing organotin compounds
    2.
    发明授权
    Process for preparing organotin compounds 有权

    公开(公告)号：US11697660B2

    公开(公告)日：2023-07-11

    申请号：US17585971

    申请日：2022-01-27

    Applicant: ENTEGRIS, INC.

    Inventor： David Kuiper ,  David M. Ermert ,  Thomas Coyne

    IPC: C07F7/22

    CPC classification number: C07F7/2284 ,  C07F7/2296

    Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

    PROCESS FOR PREPARING ORGANOTIN COMPOUNDS
    3.
    发明申请
    PROCESS FOR PREPARING ORGANOTIN COMPOUNDS 有权

    公开(公告)号：US20220242888A1

    公开(公告)日：2022-08-04

    申请号：US17585971

    申请日：2022-01-27

    Applicant: ENTEGRIS, INC.

    Inventor： David Kuiper ,  David M. Ermert ,  Thomas Coyne

    IPC: C07F7/22

    Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

    Process for preparing organotin compounds
    4.
    发明授权
    Process for preparing organotin compounds 有权

    公开(公告)号：US12297217B2

    公开(公告)日：2025-05-13

    申请号：US17591007

    申请日：2022-02-02

    Applicant: ENTEGRIS, INC.

    Inventor： David M. Ermert ,  Thomas M. Cameron ,  David Kuiper ,  Thomas H. Baum

    IPC: C07F7/22

    Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

    Vapor deposition precursor compounds and process of use
    5.
    发明授权
    Vapor deposition precursor compounds and process of use 有权

    公开(公告)号：US12209105B2

    公开(公告)日：2025-01-28

    申请号：US17901569

    申请日：2022-09-01

    Applicant: ENTEGRIS, INC.

    Inventor： Philip S. H. Chen ,  Eric Condo ,  Bryan C. Hendrix ,  Thomas H. Baum ,  David Kuiper

    IPC: C07F7/10 ,  C01B21/082 ,  C07F7/08 ,  C07F7/18 ,  C23C16/30 ,  C23C16/36 ,  C23C16/455 ,  H01L21/02

    Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

    ORGANOMETALLIC PRECURSORS AND RELATED METHODS
    7.
    发明公开
    ORGANOMETALLIC PRECURSORS AND RELATED METHODS 审中-公开

    公开(公告)号：US20230271987A1

    公开(公告)日：2023-08-31

    申请号：US18107855

    申请日：2023-02-09

    Applicant: ENTEGRIS, INC.

    Inventor： Thomas M. Cameron ,  David Kuiper ,  David M. Ermert ,  Thomas Coyne

    IPC: C07F11/00

    CPC classification number: C07F11/00

    Abstract: Some embodiments relate to precursors (including intermediate precursors) and related methods. To prepare an intermediate precursor, a mixture of bis (arene) metal complexes is combined with a first arene. The mixture of bis (arene) metal complexes and the first arene are heated and subsequently cooled. Upon cooling, a bis (first arene) metal complex precipitates from solution to obtain an intermediate precursor with high purity. To prepare a precursor, the bis (first arene) metal complex is contacted with a second arene and heated to obtain a precursor with high purity.

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