Wavelength Conversion Structure, Manufacturing Methods Thereof, and Lighting Emitting Device including the Wavelength Conversion Structure
    21.
    发明申请
    Wavelength Conversion Structure, Manufacturing Methods Thereof, and Lighting Emitting Device including the Wavelength Conversion Structure 有权
    波长转换结构及其制造方法以及包括波长转换结构在内的照明发光装置

    公开(公告)号:US20130241398A1

    公开(公告)日:2013-09-19

    申请号:US13874132

    申请日:2013-04-30

    CPC classification number: H05B33/12 H01L33/501 H01L33/507 Y10T428/249986

    Abstract: A wavelength conversion structure comprises a phosphor layer comprising a first part and a second part formed on the first part, wherein the first part and the second part have a plurality of pores, a first material layer formed in the plurality of pores of the first part, a second material layer formed in the plurality of pores of the second part and a plurality of phosphor particles, wherein the plurality of phosphor particles is distributed in the first material layer and the second material layer.

    Abstract translation: 波长转换结构包括荧光体层,其包括形成在第一部分上的第一部分和第二部分,其中第一部分和第二部分具有多个孔,第一部分层形成在第一部分的多个孔中 形成在第二部分的多个孔中的第二材料层和多个荧光体颗粒,其中多个荧光体颗粒分布在第一材料层和第二材料层中。

    SEMICONDUCTOR DEVICE ARRANGEMENT AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240405002A1

    公开(公告)日:2024-12-05

    申请号:US18734838

    申请日:2024-06-05

    Abstract: An embodiment of the present disclosure provides a semiconductor device arrangement. This semiconductor device arrangement includes a substrate and a plurality of semiconductor devices. The substrate includes an upper surface. The plurality of semiconductor devices is separately and staggered located on the upper surface, and includes a first semiconductor device and a second semiconductor device. Wherein the first semiconductor device includes a first interior angle, the second semiconductor device includes a second interior angle, and there is a minimum distance between the first interior angle and the second interior angle among the plurality of semiconductor devices, wherein the minimum distance is between 3 μm 25 μm.

    PIXEL PACKAGE
    24.
    发明公开
    PIXEL PACKAGE 审中-公开

    公开(公告)号:US20240332264A1

    公开(公告)日:2024-10-03

    申请号:US18615912

    申请日:2024-03-25

    CPC classification number: H01L25/0753 H01L33/62

    Abstract: A pixel package includes a first light-emitting diode, a second light-emitting diode, a third light-emitting diode, a transparent layered structure, and a first conductive structure. The first light-emitting diode has a first light-emitting surface and a first bottom surface opposite thereto, and the first light-emitting diode is arranged side by side with the second light-emitting diode over the first light-emitting surface. The transparent layered structure encapsulates and separates the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode. The first conductive structure has a first portion and a second portion. The first portion is located between the first light-emitting diode and the first light-emitting surface. The second portion is located under the first portion and is exposed from the transparent layered structure. In a plan view, the third light-emitting diode is respectively overlapped with the first light-emitting diode and the second light-emitting diode.

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240234660A1

    公开(公告)日:2024-07-11

    申请号:US18433367

    申请日:2024-02-05

    Inventor: Min-Hsun HSIEH

    CPC classification number: H01L33/62 H01L2933/0033 H01L2933/0066

    Abstract: This disclosure discloses a method of manufacturing a light-emitting device includes steps of providing a first substrate with a plurality of first light-emitting elements and adhesive units arranged thereon, providing a second substrate with a first group of second light-emitting elements and a second group of second light-emitting elements arranged thereon, and connecting the a second group of second light-emitting elements and the adhesive units. The first light-emitting elements and the first group of second light-emitting elements are partially or wholly overlapped with each other during connecting the second group of second light-emitting elements and the adhesive units.

    SEMICONDUCTOR DEVICE, SEMICONDUCTOR COMPONENT AND DISPLAY PANEL INCLUDING THE SAME

    公开(公告)号:US20240186449A1

    公开(公告)日:2024-06-06

    申请号:US18396320

    申请日:2023-12-26

    CPC classification number: H01L33/30 H01L27/156 H01L33/0062 H01L33/62

    Abstract: The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1 (Ec+Ev)/2.

    PACKAGE AND DISPLAY MODULE
    28.
    发明公开

    公开(公告)号:US20240145650A1

    公开(公告)日:2024-05-02

    申请号:US18407075

    申请日:2024-01-08

    CPC classification number: H01L33/58 H01L27/156 H01L33/62

    Abstract: A package comprises a substrate including a first surface, and an upper conductive layer arranged on the first surface, a first light-emitting unit arranged on the upper conductive layer, and comprises a first semiconductor layer, a first substrate, a first light-emitting surface and a first side wall, a second light-emitting unit, which is arranged on the upper conductive layer, and comprises a second light-emitting surface and a second side wall, a light-transmitting layer arranged on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit, a light-absorbing layer, which is arranged between the substrate and the light-transmitting layer in a continuous configuration of separating the first light-emitting unit and the second light-emitting unit from each other, and a reflective wall arranged on the first side wall, wherein a height of the reflective wall is lower than that of the light-absorbing layer.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230119631A1

    公开(公告)日:2023-04-20

    申请号:US17962207

    申请日:2022-10-07

    Abstract: A semiconductor device includes a semiconductor stack, a protective layer on the semiconductor stack, an electrode on the semiconductor stack and electrically connected to the semiconductor stack, and a conductive bump on the electrode. The thickness of the conductive bump is measured from the topmost point of the conductive bump to the uppermost surface of the protective layer. The ratio of the thickness of the conductive bump to the maximum width of the conductive bump is between 0.1 and 0.4.

    DISPLAY DEVICE USING LIGHT-EMITTING DIODE

    公开(公告)号:US20230048631A1

    公开(公告)日:2023-02-16

    申请号:US17400640

    申请日:2021-08-12

    Abstract: A display device includes LEDs, a circuit board, an insulating layer, conductive posts, a control conductive plate, and a common conductive strip. The circuit board includes first pads and a second pad surrounding the first pads. The LEDs are on an insulating layer covering the first pads, each including a first and second electrode pad. The conductive posts are on and connected to a first portion of the first pads, and penetrate the insulation layer. The control conductive plate is electrically connected to one of the first electrode pads and the conductive posts. The common conductive strip is on the insulation layer and electrically connected to the second pad and a second electrode pad. Each first electrode pad is electrically connected to the first pads. A second portion of the first pads is completely covered by the insulation layer and overlapped with the common conductive strip and the insulation layer.

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