公开(公告)号：US20220059727A1

公开(公告)日：2022-02-24

申请号：US17406521

申请日：2021-08-19

Applicant: EPISTAR CORPORATION

Inventor： Hao-Chun Liang ,  Wei-Shan Yeoh ,  Yao-Ning Chan ,  Yi-Ming Chen ,  Shih-Chang Lee

IPC: H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L31/0216 ,  H01L31/0352 ,  H01L33/62 ,  H01L31/02

Abstract: The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.

公开(公告)号：US10084115B2

公开(公告)日：2018-09-25

申请号：US15467679

申请日：2017-03-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

公开(公告)号：US20170194532A1

公开(公告)日：2017-07-06

申请号：US15467679

申请日：2017-03-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yi-Ming Chen ,  Shih-Chang LEE ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/06 ,  H01L33/42 ,  H01L33/22 ,  H01L33/40

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

公开(公告)号：USD764421S1

公开(公告)日：2016-08-23

申请号：US29516238

申请日：2015-01-30

Applicant: EPISTAR CORPORATION

Designer： Hui-Fang Kao ,  Tzu-Chieh Hsu ,  Yao-Ning Chan ,  Yi-Ming Chen

公开(公告)号：US09136436B2

公开(公告)日：2015-09-15

申请号：US14489169

申请日：2014-09-17

Applicant: EPISTAR CORPORATION

Inventor： Kun-De Lin ,  Yao-Ning Chan ,  Yi-Ming Chen ,  Tzu-Chieh Hsu

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/44

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.

Abstract translation: 光电子器件包括具有第一表面的半导体堆叠，在第一表面上具有欧姆接触半导体叠层的第一图案的接触层，半导体叠层中的空隙和围绕接触层的第一表面的反射镜结构 并且覆盖所述接触层，其中所述第一表面具有未被所述接触层覆盖的第一部分和被所述接触层覆盖的第二部分，并且所述第一部分比所述第二部分更粗糙。