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    Semiconductor light-emitting device and semiconductor light-emitting component
    6.
    发明授权
    Semiconductor light-emitting device and semiconductor light-emitting component 有权

    公开(公告)号：US12230736B2

    公开(公告)日：2025-02-18

    申请号：US17211331

    申请日：2021-03-24

    Applicant: EPISTAR CORPORATION

    Inventor： Jian-Zhi Chen ,  Yen-Chun Tseng ,  Hui-Fang Kao ,  Yao-Ning Chan ,  Yi-Tang Lai ,  Yun-Chung Chou ,  Shih-Chang Lee ,  Chen Ou

    IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/36 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46

    Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11121285B2

    公开(公告)日：2021-09-14

    申请号：US16680207

    申请日：2019-11-11

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu Chang ,  Hui-Fang Kao ,  Yi-Tang Lai ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Mei Chun Liu ,  Yao-Ru Chang ,  Yi Hisao

    IPC: H01L33/14 ,  H01L33/40 ,  H01L25/075

    Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.

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