HYBRID METAL OXIDE SEMICONDUCTOR CAPACITOR WITH ENHANCED PHASE TUNING

    公开(公告)号:US20230296831A1

    公开(公告)日:2023-09-21

    申请号:US17695673

    申请日:2022-03-15

    CPC classification number: G02B6/12004 G02F1/025 H01S5/026 G02B2006/12061

    Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

    Optical coupler
    22.
    发明授权

    公开(公告)号:US11630334B2

    公开(公告)日:2023-04-18

    申请号:US16948579

    申请日:2020-09-24

    Abstract: Examples described herein relate to an optical coupler. The optical coupler may include a first optical waveguide base layer, a second optical waveguide base layer, an insulating layer disposed over at least a portion of both the first optical waveguide base layer and the second optical waveguide base layer, and a semiconductor material layer disposed over the insulating layer. Overlapping portions of the first optical waveguide base layer, the insulating layer, and the semiconductor material layer form a first optical waveguide, and overlapping portions of the second optical waveguide base layer, the insulating layer, and the semiconductor material layer form a second optical waveguide. Moreover, the optical coupler may include a plurality of metal contacts to receive one or more first biasing voltages to operate one of the first optical waveguide base layer and the second optical waveguide base layer in an accumulation mode.

    INTENSITY NOISE MITIGATION FOR VERTICAL-CAVITY SURFACE EMITTING LASERS

    公开(公告)号:US20200244040A1

    公开(公告)日:2020-07-30

    申请号:US16258616

    申请日:2019-01-27

    Abstract: A VCSEL device includes a substrate and a first DBR structure disposed on the substrate. The VCSEL device further includes a cathode contact disposed on a top surface of the first DBR structure. In addition, the VCSEL device includes a VCSEL mesa that is disposed on the top surface of the first DBR structure. The VCSEL mesa includes a quantum well, a non-circularly-shaped oxide aperture region disposed above the quantum well, and a second DBR structure disposed above the non-circularly-shaped oxide aperture region. In addition, the VCSEL mesa includes a selective polarization structure disposed above the second DBR structure and an anode contact disposed above the selective polarization structure.

    Optical device having a Mach-Zehnder interferometer with improved linearity

    公开(公告)号:US12298649B2

    公开(公告)日:2025-05-13

    申请号:US18060903

    申请日:2022-12-01

    Abstract: Example optical devices having a Mach-Zehnder interferometer (MZI) with improved linearity are presented. An example optical device may include an MZI and a microring resonator (MRR) optically coupled to any one of a first optical waveguide arm or a second optical waveguide arm, where the MRR is operable in a resonance state and in an off-resonance state during operation of the optical device. The MZI includes a length difference between the first optical waveguide arm and the second optical waveguide arm thereby achieving a quarter-period phase delay between optical signals of the first optical waveguide arm and the second optical waveguide arm such that a superlinear transmission region of the microring resonator is aligned with peaks of an optical output of the MZI improving linearity of the optical output of the MZI.

    RECONFIGURABLE ELECTRO-OPTICAL LOGIC GATE TO PERFORM MULTIPLE LOGIC OPERATIONS

    公开(公告)号:US20250123536A1

    公开(公告)日:2025-04-17

    申请号:US18485452

    申请日:2023-10-12

    Abstract: An example optical system having an electro-optical (EO) logic gate connected to a controller is presented. The controller modulates a first encoded electrical signal and a second encoded electrical signal based on an operation selection input. The EO logic gate includes a first Mach Zehnder interferometer (MZI) coupled between an optical input port and an optical output port; a second MZI optically coupled in parallel with the first MZI; a first phase shifter adjacent to the first MZI and; and a second phase shifter adjacent to the second MZI. The phase shifters apply phase shifts to the optical signals propagating via the first and second MZIs based on the modulated first encoded electrical signal and the modulated second encoded electrical signal to cause an optical output at the optical output port to vary based on the logic operation of the first encoded electrical signal and the second encoded electrical signal.

    Optical device for phase shifting an optical signal

    公开(公告)号:US12242142B2

    公开(公告)日:2025-03-04

    申请号:US17661249

    申请日:2022-04-28

    Abstract: Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

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