公开(公告)号：US11646802B2

公开(公告)日：2023-05-09

申请号：US16891008

申请日：2020-06-02

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang ,  Zhihong Huang

IPC: H04B10/2507 ,  H04B10/61

CPC classification number: H04B10/6151 ,  H04B10/2572

Abstract: Systems and methods are provided for receiving an optical signal from an optical fiber, including: coupling via an optical coupler the optical signal from an optical fiber into first and second waveguides, wherein the optical signal comprises TE and TM polarized optical signals and the optical coupler couples the TE polarized optical signal into the first waveguide and the TM polarized optical signal into the second waveguide; equalizing the TE and TM polarized optical signals from the coupler to equalize optical power levels of the TE and TM polarized optical signals; optically combining the equalized TE and TM polarized optical signals; and transmitting the combined optical signal to a photodetector.

公开(公告)号：US11502215B2

公开(公告)日：2022-11-15

申请号：US17249192

申请日：2021-02-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Di Liang ,  Xiaoge Zeng ,  Zhihong Huang

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0336

Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.

公开(公告)号：US11105988B2

公开(公告)日：2021-08-31

申请号：US16457776

申请日：2019-06-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Zhihong Huang ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02B6/42 ,  H04J14/02 ,  H01S5/343 ,  H01S5/34 ,  G02B6/293 ,  H01L31/18 ,  H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01S5/02 ,  H01S5/22 ,  H01L31/0203 ,  H01L31/113 ,  H01L31/0232 ,  H01S5/30 ,  H01S5/026 ,  H04B10/80 ,  H04B10/40 ,  H01S5/065 ,  H01S5/02234

Abstract: A Dense Wavelength Division Multiplexing (DWDM) photonic integration circuit (PIC) that implements a DWDM system, such as a transceiver, is described. The DWDM PIC architecture includes photonic devices fully integrating on a single manufacturing platform. The DWDM PIC has a multi-wavelength optical laser, a quantum dot (QD) laser with integrated heterogeneous metal oxide semiconductor (H-MOS) capacitor, integrated on-chip. The multi-wavelength optical laser can be a symmetric comb laser that generates two equal outputs of multi-wavelength light. Alternatively, the DWDM PIC can be designed to interface with a stand-alone multi-wavelength optical laser that is off-chip. In some implementations, the DWDM PIC integrates multiple optimally designed photonic devices, such as a silicon geranium (SiGe) avalanche photodetector (APD), an athermal H-MOS wavelength splitter, a QD photodetector, and a heterogenous grating coupler. Accordingly, fabricating the DWDM PIC includes a unique III-V to silicon bonding process, which is adapted for its use of SiGe APDs.

公开(公告)号：US10854768B2

公开(公告)日：2020-12-01

申请号：US16226753

申请日：2018-12-20

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Xiaoge Zeng ,  Zhihong Huang ,  Di Liang

IPC: H01L31/107 ,  G01J1/44 ,  H01L31/18

Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

公开(公告)号：US20200303582A1

公开(公告)日：2020-09-24

申请号：US16890374

申请日：2020-06-02

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Zhihong Huang ,  Raymond G. Beausoleil

IPC: H01L31/109 ,  G02B6/12 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

Abstract: An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.

公开(公告)号：US10680566B2

公开(公告)日：2020-06-09

申请号：US15768864

申请日：2015-10-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Cheng Li ,  Zhihong Huang

IPC: H03F3/08 ,  H03F3/30 ,  H03F1/26 ,  H03F1/08

Abstract: One embodiment describes a transimpedance amplifier (TIA) system. The system includes an inverter TIA stage interconnecting an input node and an output node and configured to invert an input signal at the input node to provide a first inverted signal component at the output node. The system also includes a noise-canceling inverter stage arranged in parallel with the inverter stage and being configured to invert the input signal to provide a second inverted signal component and to invert noise from the input node. Thus, the first and second inverted signal components constructively combine at the output node and the noise is substantially mitigated at the output node.

公开(公告)号：US10431707B2

公开(公告)日：2019-10-01

申请号：US15560649

申请日：2015-04-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Cheng Li ,  Zhihong Huang ,  Marco Fiorentino ,  Raymond G. Beausoleil

IPC: H01L31/10 ,  H01L31/107 ,  H04B10/00 ,  H01L25/04 ,  H01L27/146 ,  H04B10/69

Abstract: An example device in accordance with an aspect of the present disclosure includes an avalanche photodetector to enable carrier multiplication for increased responsivity, and a receiver based on source-synchronous CMOS and including adaptive equalization. The photodetector and receiver are monolithically integrated on a single chip.

公开(公告)号：US20180097139A1

公开(公告)日：2018-04-05

申请号：US15560649

申请日：2015-04-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Cheng Li ,  Zhihong Huang ,  Marco Fiorentino ,  Raymond G. Beausoleil

IPC: H01L31/107 ,  H01L25/04 ,  H01L27/146 ,  H04B10/69

CPC classification number: H01L31/107 ,  H01L25/041 ,  H01L27/14634 ,  H01L27/14636 ,  H04B10/00 ,  H04B10/6911

Abstract: An example device in accordance with an aspect of the present disclosure includes an avalanche photodetector to enable carrier multiplication for increased responsivity, and a receiver based on source-synchronous CMOS and including adaptive equalization. The photodetector and receiver are monolithically integrated on a single chip.

公开(公告)号：US09927572B1

公开(公告)日：2018-03-27

申请号：US15397903

申请日：2017-01-04

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Zhihong Huang ,  Raymond G Beausoleil

IPC: G02B6/12

CPC classification number: G02B6/12004 ,  G02B6/12002 ,  G02B2006/12061 ,  G02B2006/12121 ,  G02B2006/12123

Abstract: Examples include hybrid silicon photonic device structures. Some examples include a method of integrating a photodetector with a photonic device on a silicon wafer to make a hybrid silicon photonic device structure. A dielectric layer is established on the silicon wafer. A pit is formed in a portion of the dielectric layer and the silicon wafer, wherein a bottom of the pit is silicon. A germanium layer is grown in the pit such that a top of the germanium layer is lower than a top of the silicon wafer. The germanium layer comprises the photodetector. A photonic device material that comprises the photonic device is bonded to the silicon wafer without planarization of the silicon wafer.

公开(公告)号：US20230014190A1

公开(公告)日：2023-01-19

申请号：US17305892

申请日：2021-07-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Sudharsanan Srinivasan ,  Di Liang ,  Zhihong Huang

IPC: G02B6/42

Abstract: Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.