公开(公告)号：US20180149961A1

公开(公告)日：2018-05-31

申请号：US15576937

申请日：2016-09-27

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Takenori KAJIWARA ,  Hiroaki SHISHIDO

IPC: G03F1/32

CPC classification number: G03F1/32 ,  G03F1/54

Abstract: A mask blank with a phase shift film and a light shielding film, laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance (τ) 2%≥τ≤30% and generates a phase difference (ΔΦ) of 150°≥ΔΦ≤200°, and is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below the transparent substrate while n for layer U is higher, and the layer L has an extinction coefficient k higher than layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than layer U, and has an extinction coefficient k higher than layer U.

公开(公告)号：US20170285458A1

公开(公告)日：2017-10-05

申请号：US15503415

申请日：2015-10-07

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Takenori KAJIWARA

IPC: G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  H01L21/027 ,  C23C14/00 ,  C23C14/06 ,  C23C14/18 ,  C23C14/10 ,  G03F7/34 ,  C23C14/34

CPC classification number: G03F1/32 ,  C23C14/0057 ,  C23C14/06 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/0676 ,  C23C14/10 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/3464 ,  C23C14/5806 ,  C23C14/584 ,  G03F1/58 ,  G03F1/80 ,  G03F7/2006 ,  G03F7/34 ,  H01L21/027

Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.

公开(公告)号：US20250044677A1

公开(公告)日：2025-02-06

申请号：US18918951

申请日：2024-10-17

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Ryo OHKUBO ,  Osamu NOZAWA

IPC: G03F1/32

Abstract: The present invention addresses the problem of providing a mask blank that makes it possible to further miniaturize a mask pattern or a hard mask pattern and improving the pattern quality, and to resolve this problem, a mask blank (100) has a structure in which a thin film (3) for pattern formation and a hard mask film (4) are laminated in this order on a transparent substrate (1), wherein the hard mask film (4) is configured so that a narrow spectrum of Si2p obtained by analysis by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of 103 eV or more, a maximum peak of a narrow spectrum of N1s obtained by analysis by X-ray photoelectron spectroscopy is equal to or less than a detection lower limit value, and the content ratio (atomic %) of silicon and oxygen is less than Si:O=1:2.

公开(公告)号：US20230259015A1

公开(公告)日：2023-08-17

申请号：US18010744

申请日：2021-06-17

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: Provided is a mask blank.
The mask blank has a structure where a thin film for pattern formation, a first hard mask film, and a second hard mask film are stacked in this order on a main surface of a substrate, the thin film for pattern formation contains a transition metal, the first hard mask film contains oxygen and one or more elements selected from silicon and tantalum, the second hard mask film contains a transition metal, a content of transition metal of the second hard mask film is less than the content of transition metal of the thin film for pattern formation, a region where the first hard mask film is formed on the main surface is smaller than a region where the thin film for pattern formation is formed, and the second hard mask film and the thin film for pattern formation are in contact with each other at least in part.

公开(公告)号：US20230099176A1

公开(公告)日：2023-03-30

申请号：US18073794

申请日：2022-12-02

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO

IPC: G03F1/26 ,  G03F7/20 ,  G03F1/54 ,  G03F1/50

Abstract: A mask blank including a light shielding film pattern having high ArF light fastness.
The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.

公开(公告)号：US20220214608A1

公开(公告)日：2022-07-07

申请号：US17438194

申请日：2020-02-20

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Ryo OHKUBO ,  Osamu NOZAWA

IPC: G03F1/32

Abstract: A mask blank 100 has a structure in which a pattern-forming thin film 3 and a hard mask film 4 are formed on a transparent substrate 1 in this order. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV. An N1s narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak below a detection lower limit value. In the hard mask film 4, a content ratio (atomic %) of silicon and oxygen is Si:O=1:less than 2.

公开(公告)号：US20210373432A1

公开(公告)日：2021-12-02

申请号：US17397642

申请日：2021-08-09

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO

IPC: G03F1/26 ,  G03F7/20 ,  G03F1/54 ,  G03F1/50

Abstract: A mask blank including a light shielding film pattern having high ArF light fastness.
The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.

公开(公告)号：US20210141305A1

公开(公告)日：2021-05-13

申请号：US16492904

申请日：2018-02-28

Applicant: HOYA CORPORATION

Inventor： Kazutake TANIGUCHI ,  Hiroaki SHISHIDO

IPC: G03F1/54 ,  H01L21/027

Abstract: Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below. n≤0.0733×k2+0.4069×k+1.0083  Formula (1) n≥29.316×k2−92.292×k+72.671  Formula (2)

公开(公告)号：US20200379338A1

公开(公告)日：2020-12-03

申请号：US16955002

申请日：2018-10-31

Applicant: HOYA CORPORATION ,  HOYA ELECTRONICS SINGAPORE PTE. LTD.

Inventor： Hiroaki SHISHIDO ,  Masahiro HASHIMOTO ,  Takashi UCHIDA ,  Mariko UCHIDA

IPC: G03F1/32 ,  G03F1/54

Abstract: In a mask blank, a phase shift film in contact with a transparent substrate includes a stack of two or more layers including a lowermost layer. The, layers other than the lowermost layer are made of a material consisting of silicon and one or more elements selected from a metalloid element and anon-metallic element. The lowermost layer is made of a material consisting of silicon and nitrogen and, optionally, one or more elements selected from a metalloid element and anon-metallic element. A ratio of a number of Si3N4 bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds (provided that b/[a+b]

公开(公告)号：US20180335693A1

公开(公告)日：2018-11-22

申请号：US15776862

申请日：2016-11-07

Applicant: HOYA CORPORATION

Inventor： Takahiro HIROMATSU ,  Hiroaki SHISHIDO ,  Seishi SHIBAYAMA

IPC: G03F1/40 ,  G03F7/039 ,  G03F1/78

Abstract: A mask blank having a resist layer, which enables charge-up to be suppressed during electron beam irradiation. The mask blank having a resist layer includes a substrate having a thin film, a resist layer formed on a surface of the thin film, and a conductive layer formed on the resist layer. The conductive layer includes a first metal layer containing aluminum as a main component thereof and a second metal layer made of a metal other than aluminum. The first metal layer is formed on the resist layer side of the second metal layer.