公开(公告)号：US20200033718A1

公开(公告)日：2020-01-30

申请号：US16596008

申请日：2019-10-08

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Takenori KAJIWARA ,  Hiroaki SHISHIDO

IPC: G03F1/32 ,  G03F1/54

Abstract: A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150° to 200°, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.

公开(公告)号：US20190018312A1

公开(公告)日：2019-01-17

申请号：US16136794

申请日：2018-09-20

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Takenori KAJIWARA

IPC: G03F1/32 ,  C23C14/06 ,  G03F7/20 ,  H01L21/027 ,  G03F1/26

Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer.

公开(公告)号：US20190163047A1

公开(公告)日：2019-05-30

申请号：US16318216

申请日：2017-06-22

Applicant: HOYA CORPORATION

Inventor： Takenori KAJIWARA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/80 ,  G03F1/74 ,  H01L21/033

Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.

公开(公告)号：US20180149961A1

公开(公告)日：2018-05-31

申请号：US15576937

申请日：2016-09-27

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Takenori KAJIWARA ,  Hiroaki SHISHIDO

IPC: G03F1/32

CPC classification number: G03F1/32 ,  G03F1/54

Abstract: A mask blank with a phase shift film and a light shielding film, laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance (τ) 2%≥τ≤30% and generates a phase difference (ΔΦ) of 150°≥ΔΦ≤200°, and is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below the transparent substrate while n for layer U is higher, and the layer L has an extinction coefficient k higher than layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than layer U, and has an extinction coefficient k higher than layer U.

公开(公告)号：US20170285458A1

公开(公告)日：2017-10-05

申请号：US15503415

申请日：2015-10-07

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Takenori KAJIWARA

IPC: G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  H01L21/027 ,  C23C14/00 ,  C23C14/06 ,  C23C14/18 ,  C23C14/10 ,  G03F7/34 ,  C23C14/34

CPC classification number: G03F1/32 ,  C23C14/0057 ,  C23C14/06 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/0676 ,  C23C14/10 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/3464 ,  C23C14/5806 ,  C23C14/584 ,  G03F1/58 ,  G03F1/80 ,  G03F7/2006 ,  G03F7/34 ,  H01L21/027

Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.

公开(公告)号：US20180259841A1

公开(公告)日：2018-09-13

申请号：US15571131

申请日：2016-05-10

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Takenori KAJIWARA ,  Ryo OHKUBO

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/80 ,  G03F1/74 ,  G03F1/78 ,  G03F1/50

CPC classification number: G03F1/32 ,  G03F1/50 ,  G03F1/54 ,  G03F1/74 ,  G03F1/78 ,  G03F1/80

Abstract: A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.

公开(公告)号：US20180210331A1

公开(公告)日：2018-07-26

申请号：US15743783

申请日：2016-07-11

Applicant: HOYA CORPORATION

Inventor： Takenori KAJIWARA ,  Hiroaki SHISHIDO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/00 ,  G03F1/80 ,  G03F1/82 ,  H01L21/033

CPC classification number: G03F1/32 ,  G03F1/0076 ,  G03F1/54 ,  G03F1/58 ,  G03F1/80 ,  G03F1/82 ,  H01L21/0337

Abstract: An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side. The lower layer has a refractive index n at a wavelength of the exposure light that is smaller than that of the transparent substrate. The upper layer has a refractive index n at the wavelength of the exposure light that is larger than that of the transparent substrate. The lower layer has an extinction coefficient k at the wavelength of the exposure light that is larger than that of the upper layer. The upper layer has a thickness that is larger than that of the lower layer.

公开(公告)号：US20180143528A1

公开(公告)日：2018-05-24

申请号：US15501659

申请日：2016-08-02

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Takenori KAJIWARA

IPC: G03F1/32 ,  C23C14/00 ,  C23C14/34 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F1/32 ,  C23C14/06 ,  C23C14/0652 ,  G03F1/26 ,  G03F7/70 ,  H01L21/0274

Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness.The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer.