公开(公告)号：US20230367196A1

公开(公告)日：2023-11-16

申请号：US18226165

申请日：2023-07-25

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO

IPC: G03F1/24 ,  H01L21/033

CPC classification number: G03F1/24 ,  H01L21/0332 ,  H01L21/0337

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom% or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

公开(公告)号：US20220163880A1

公开(公告)日：2022-05-26

申请号：US17668597

申请日：2022-02-10

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO

IPC: G03F1/24 ,  H01L21/033

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for Nis in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

公开(公告)号：US20210149294A1

公开(公告)日：2021-05-20

申请号：US17128499

申请日：2020-12-21

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO

IPC: G03F1/32 ,  G03F1/26 ,  G03F1/38 ,  H01L21/033 ,  G03F1/80 ,  G03F7/20 ,  G03F1/54

Abstract: Provided is a mask blank (100) for manufacturing a phase shift mask, the mask blank enabling formation of a high-precision and fine pattern on a light shielding film.
The mask blank (100) in which a phase shift film (2) made of a material containing silicon, a light shielding film (3) made of a material containing chromium, oxygen, and carbon, and a hard mask film (4) made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate (1) is characterized in that the light shielding film (3) is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film (4) side and in a region close thereto, the light shielding film (3) has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film (3) excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.

公开(公告)号：US20210088895A1

公开(公告)日：2021-03-25

申请号：US16970601

申请日：2019-01-08

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Ryo OHKUBO ,  Yasutaka HORIGOME

IPC: G03F1/32 ,  H01L21/033

Abstract: A mask blank in which a phase shift film provided on a transparent substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer contains silicon and nitrogen and the oxygen-containing layer contains silicon and oxygen, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate, is 1.09 or less.

公开(公告)号：US20190163047A1

公开(公告)日：2019-05-30

申请号：US16318216

申请日：2017-06-22

Applicant: HOYA CORPORATION

Inventor： Takenori KAJIWARA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/80 ,  G03F1/74 ,  H01L21/033

Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.

公开(公告)号：US20220179300A1

公开(公告)日：2022-06-09

申请号：US17436506

申请日：2020-02-20

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Ryo OHKUBO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/24 ,  H01L21/027

Abstract: A mask blank has a structure in which a pattern-forming thin film and a hard mask film are formed on a substrate in this order. The hard mask film is made of a material containing silicon, oxygen, and nitrogen. The hard mask film has a nitrogen content of at least 2% and at most 18%. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV.

公开(公告)号：US20220035235A1

公开(公告)日：2022-02-03

申请号：US17275628

申请日：2019-09-10

Applicant: HOYA CORPORATION

Inventor： Ryo OHKUBO ,  Hitoshi MAEDA ,  Keishi AKIYAMA ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/34 ,  G03F1/54 ,  C23C14/08 ,  C23C14/34 ,  H01L21/027

Abstract: Provided is a mask blank including an etching stopper film. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, featured in that the thin film includes a material containing silicon, the etching stopper film includes a material containing hafnium, aluminum, and oxygen, and a ratio by atom % of an amount of hafnium to a total amount of hafnium and aluminum in the etching stopper film is 0.86 or less.

公开(公告)号：US20200064725A1

公开(公告)日：2020-02-27

申请号：US16488901

申请日：2018-01-24

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO

IPC: G03F1/24 ,  H01L21/033

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

公开(公告)号：US20180259841A1

公开(公告)日：2018-09-13

申请号：US15571131

申请日：2016-05-10

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Takenori KAJIWARA ,  Ryo OHKUBO

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/80 ,  G03F1/74 ,  G03F1/78 ,  G03F1/50

CPC classification number: G03F1/32 ,  G03F1/50 ,  G03F1/54 ,  G03F1/74 ,  G03F1/78 ,  G03F1/80

Abstract: A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.

公开(公告)号：US20160187769A1

公开(公告)日：2016-06-30

申请号：US14910854

申请日：2014-09-05

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO ,  Yasushi OKUBO

IPC: G03F1/42 ,  G03F7/20 ,  G03F1/48

CPC classification number: G03F1/42 ,  C23C14/06 ,  C23C14/0641 ,  C23C14/3414 ,  G03F1/32 ,  G03F1/48 ,  G03F1/80 ,  G03F7/20

Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.

Abstract translation: 提供掩模坯料，通过该掩模坯料，可以在透明基板和光半透射膜，蚀刻停止膜和遮光膜的层压结构之间形成对准标记，在转印掩模的制造期间。 掩模坯料100包括在透明基板1上以顺序层叠光半透射膜2，蚀刻阻挡膜3，遮光膜4和蚀刻掩模膜5的结构， 轻半透射膜2和遮光膜3由可以用氟基气体进行干蚀刻的材料制成; 蚀刻阻挡膜和蚀刻掩模膜由含铬的材料制成; 当蚀刻阻挡膜的厚度为Ds时，蚀刻阻挡膜相对于含氧氯系气体的蚀刻速度为Vs，蚀刻掩模膜的厚度为Dm，蚀刻速度为 相对于含氧氯系气体的蚀刻掩模膜为Vm，满足关系式（Dm / Vm）>（Ds / Vs）。