公开(公告)号：US20190270639A1

公开(公告)日：2019-09-05

申请号：US16270219

申请日：2019-02-07

Applicant: Infineon Technologies AG

Inventor： Gunar Lorenz ,  Alfons Dehe ,  Marc Fueldner ,  Bernd Goller ,  Ulrich Krumbein ,  Andreas Wiesbauer

IPC: B81B7/00 ,  B81B7/02 ,  B81B3/00 ,  H04R19/04

Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 μm into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.

公开(公告)号：US10322481B2

公开(公告)日：2019-06-18

申请号：US14198646

申请日：2014-03-06

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Reinhard Gabl ,  Ulrich Krumbein

IPC: B81B3/00 ,  B23Q3/18 ,  H04R7/18 ,  H04R17/00 ,  H04R19/00 ,  H04R31/00 ,  B81C1/00

Abstract: A structure for fixing a membrane to a carrier including a carrier; a suspended structure; and a holding structure with a rounded concave shape which is configured to fix the suspended structure to the carrier and where a tapered side of the holding structure physically connects to the suspended structure is disclosed. A method of forming the holding structure on a carrier to support a suspended structure is further disclosed. The method may include: forming a holding structure on a carrier; forming a suspended structure on the holding structure; shaping the holding structure such that it has a concave shape; and arranging the holding structure such that a tapered side of the holding structure physically connects to the suspended structure.

公开(公告)号：US20180213602A1

公开(公告)日：2018-07-26

申请号：US15879110

申请日：2018-01-24

Applicant: Infineon Technologies AG

Inventor： Ulrich Krumbein ,  Werner Simbuerger ,  Dietmar Straeussnigg ,  Andreas Wiesbauer

IPC: H05B3/02 ,  G01N33/00 ,  G01K1/20 ,  G01L19/04 ,  H04R1/08

CPC classification number: H05B3/02 ,  G01K1/20 ,  G01L9/125 ,  G01L19/0092 ,  G01L19/04 ,  G01N33/0073 ,  H04R1/08 ,  H04R9/022 ,  H04R2201/003 ,  H05B1/0227

Abstract: A sensor circuit and a method for compensating for temperature changes are provided. In accordance with an embodiment, sensor circuit includes at least one sensor for determining a measurement variable; a heating structure; and at least one compensation circuit. The compensation circuit is configured to acquire information about a temperature change in an environment of the sensor, and to counteract a temperature change in the sensor on the basis of the information by driving the heating structure.

公开(公告)号：US09888331B2

公开(公告)日：2018-02-06

申请号：US14486696

申请日：2014-09-15

Applicant: Infineon Technologies AG

Inventor： Andreas Wiesbauer ,  Christian Jenkner ,  Ulrich Krumbein ,  Marc Füldner

IPC: H04R29/00

Abstract: According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. The symmetry detection circuit is coupled to a differential output of the transducer element and is configured to output an error signal based on asymmetry in the differential output.

公开(公告)号：US09691687B2

公开(公告)日：2017-06-27

申请号：US14266348

申请日：2014-04-30

Applicant: Infineon Technologies AG

Inventor： Daniel Kehrer ,  Ulrich Krumbein ,  Beng-Keh See ,  Horst Theuss ,  Helmut Wietschorke ,  Tze Yang Hin ,  Stefan Martens

IPC: H01L23/34 ,  H01L23/495 ,  H01L23/31 ,  H01L23/66 ,  H01L25/16 ,  H01L23/00

CPC classification number: H01L23/495 ,  H01L23/3107 ,  H01L23/315 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2224/16145 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A module and a method for manufacturing a module are disclosed. An embodiment of a module includes a first semiconductor device, a frame arranged on the first semiconductor device, the frame including a cavity, and a second semiconductor device arranged on the frame wherein the second semiconductor device seals the cavity.

公开(公告)号：US20160080879A1

公开(公告)日：2016-03-17

申请号：US14486696

申请日：2014-09-15

Applicant: Infineon Technologies AG

Inventor： Andreas Wiesbauer ,  Christian Jenkner ,  Ulrich Krumbein ,  Marc Füldner

IPC: H04R29/00

CPC classification number: H04R29/004 ,  H04R2201/003

Abstract: According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. The symmetry detection circuit is coupled to a differential output of the transducer element and is configured to output an error signal based on asymmetry in the differential output.

Abstract translation: 根据实施例，换能器系统包括换能元件和对称检测电路。 换能元件包括信号板，第一感测板和第二感测板。 对称性检测电路耦合到换能器元件的差分输出，并且被配置为基于差分输出中的不对称来输出误差信号。

公开(公告)号：US11835041B2

公开(公告)日：2023-12-05

申请号：US16922530

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Alfons Dehe ,  Daniel Fruechtl ,  Wolfgang Klein ,  Ulrich Krumbein ,  Johann Strasser ,  Matthias Vobl

IPC: F04B53/10 ,  F04B43/04 ,  F16K99/00

CPC classification number: F04B53/1047 ,  F04B43/046 ,  F16K99/0015 ,  F16K2099/0094

Abstract: A MEMS pump includes a basis structure, a membrane structure opposing the basis structure and being deflectable parallel to a surface normal of the basis structure and includes a pump chamber between the basis structure and the membrane structure wherein a volume of the pump chamber is based on a position of the membrane structure with respect to the basis structure. The MEMS pump includes a passage for letting a fluid pass into the pump chamber or exit the pump chamber, wherein the passage is arranged in-plane with respect to the pump chamber. The MEMS pump includes a valve structure coupled to the passage for connecting, in a first state, the passage to a first outer volume and for connecting, in a second state, the passage to a second outer volume.

公开(公告)号：US11237090B2

公开(公告)日：2022-02-01

申请号：US16807698

申请日：2020-03-03

Applicant: Infineon Technologies AG

Inventor： Michael Schneider ,  Alfons Dehe ,  Manuel Dorfmeister ,  Christoph Glacer ,  Ulrich Krumbein ,  Ulrich Schmid ,  David Tumpold

IPC: G01N15/06

Abstract: A sensor element includes a membrane structure suspended on a frame structure, wherein the membrane structure includes a membrane element and an actuator. The membrane structure is deflectable in a first stable deflection state and in a second stable deflection state and is operable in a resonance mode in at least one of the first and the second stable deflection states. The actuator is configured to deflect the membrane structure in a first actuation state into one of the first and the second stable deflection states, and to operate the membrane structure in a second actuation state in a resonance mode having an associated resonance frequency.

公开(公告)号：US20220009771A1

公开(公告)日：2022-01-13

申请号：US17357234

申请日：2021-06-24

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Carsten Ahrens ,  Stefan Jost ,  Ulrich Krumbein

IPC: B81C1/00 ,  B81B3/00

Abstract: A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

公开(公告)号：US20210323813A1

公开(公告)日：2021-10-21

申请号：US17357146

申请日：2021-06-24

Applicant: Infineon Technologies AG

Inventor： Gunar Lorenz ,  Alfons Dehe ,  Marc Fueldner ,  Bernd Goller ,  Ulrich Krumbein ,  Andreas Wiesbauer

IPC: B81B7/00 ,  B81B3/00 ,  B81B7/02 ,  H04R19/04 ,  H04R1/02 ,  G01L9/00

Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 μm into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.