公开(公告)号：US11721724B2

公开(公告)日：2023-08-08

申请号：US17364985

申请日：2021-07-01

Applicant: Intel Corporation

Inventor： Nicole K. Thomas ,  James S. Clarke ,  Jessica M. Torres ,  Ravi Pillarisetty ,  Kanwaljit Singh ,  Payam Amin ,  Hubert C. George ,  Jeanette M. Roberts ,  Roman Caudillo ,  David J. Michalak ,  Zachary R. Yoscovits ,  Lester Lampert

IPC: H01L29/12 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/82

CPC classification number: H01L29/122 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66977 ,  H01L29/66984 ,  H01L29/82

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.

公开(公告)号：US11417755B2

公开(公告)日：2022-08-16

申请号：US16649772

申请日：2018-01-08

Applicant: Intel Corporation

Inventor： Kanwaljit Singh ,  Ravi Pillarisetty ,  Nicole K. Thomas ,  Payam Amin ,  Roman Caudillo ,  Hubert C. George ,  Jeanette M. Roberts ,  Zachary R. Yoscovits ,  James S. Clarke ,  Lester Lampert ,  David J. Michalak

IPC: H01L29/66 ,  G06N10/00 ,  H01L29/43 ,  H01L29/49 ,  H01L29/778 ,  H01L29/78 ,  H01L29/82 ,  H01L29/12 ,  B82Y10/00 ,  H01L29/76

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer; a first gate above the quantum well stack, wherein the first gate includes a first gate metal; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal, and a material structure of the second gate metal is different from a material structure of the first gate metal; wherein the quantum well layer has a first strain under the first gate, a second strain under the second gate, and the first strain is different from the second strain.

公开(公告)号：US20210328019A1

公开(公告)日：2021-10-21

申请号：US17364985

申请日：2021-07-01

Applicant: Intel Corporation

Inventor： Nicole K. Thomas ,  James S. Clarke ,  Jessica M. Torres ,  Ravi Pillarisetty ,  Kanwaljit Singh ,  Payam Amin ,  Hubert C. George ,  Jeanette M. Roberts ,  Roman Caudillo ,  David J. Michalak ,  Zachary R. Yoscovits ,  Lester Lampert

IPC: H01L29/12 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/82

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.

公开(公告)号：US11114530B2

公开(公告)日：2021-09-07

申请号：US16648442

申请日：2017-12-17

Applicant: Intel Corporation

Inventor： Nicole K. Thomas ,  James S. Clarke ,  Jessica M. Torres ,  Ravi Pillarisetty ,  Kanwaljit Singh ,  Payam Amin ,  Hubert C. George ,  Jeanette M. Roberts ,  Roman Caudillo ,  David J. Michalak ,  Zachary R. Yoscovits ,  Lester Lampert

IPC: H01L29/12 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/82

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.

公开(公告)号：US20200295164A1

公开(公告)日：2020-09-17

申请号：US16649772

申请日：2018-01-08

Applicant: Intel Corporation

Inventor： Kanwaljit Singh ,  Ravi Pillarisetty ,  Nicole K. Thomas ,  Payam Amin ,  Roman Caudillo ,  Hubert C. George ,  Jeanette M. Roberts ,  Zachary R. Yoscovits ,  James S. Clarke ,  Lester Lampert ,  David J. Michalak

IPC: H01L29/66 ,  H01L29/82 ,  H01L29/78 ,  H01L29/778 ,  H01L29/43 ,  H01L29/49 ,  G06N10/00

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer; a first gate above the quantum well stack, wherein the first gate includes a first gate metal; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal, and a material structure of the second gate metal is different from a material structure of the first gate metal; wherein the quantum well layer has a first strain under the first gate, a second strain under the second gate, and the first strain is different from the second strain.

公开(公告)号：US10665770B2

公开(公告)日：2020-05-26

申请号：US15913799

申请日：2018-03-06

Applicant: Intel Corporation

Inventor： Ravi Pillarisetty ,  Kanwaljit Singh ,  Patrick H. Keys ,  Roman Caudillo ,  Hubert C. George ,  Zachary R. Yoscovits ,  Nicole K. Thomas ,  James S. Clarke ,  Roza Kotlyar ,  Payam Amin ,  Jeanette M. Roberts

IPC: H01L39/22 ,  H01L39/02 ,  H01L39/24 ,  H01L39/04 ,  G06N10/00 ,  H01L29/12 ,  H01L27/18 ,  H01L29/66 ,  B82Y10/00 ,  H01L39/14 ,  H01L29/76 ,  H01L29/423 ,  H01L29/06 ,  H01L29/16 ,  H01L21/8234

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin includes a quantum well layer; a gate above the fin; and a material on side faces of the fin; wherein the fin has a width between its side faces, and the fin is strained in the direction of the width.