公开(公告)号：US09312375B2

公开(公告)日：2016-04-12

申请号：US14505417

申请日：2014-10-02

Applicant: International Rectifier Corporation

Inventor： Chuan Cheah ,  Michael A. Briere

IPC: H01L29/66 ,  H01L29/778 ,  H01L23/29 ,  H01L23/482 ,  H01L23/00 ,  H01L29/20 ,  H01L27/088 ,  H01L29/201 ,  H01L29/205 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/41758 ,  H01L23/293 ,  H01L23/4824 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/452 ,  H01L29/7787 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05022 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05555 ,  H01L2224/05556 ,  H01L2224/05563 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/05639 ,  H01L2224/0603 ,  H01L2224/0615 ,  H01L2224/0616 ,  H01L2224/06177 ,  H01L2224/131 ,  H01L2224/29005 ,  H01L2224/29014 ,  H01L2224/29023 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/3003 ,  H01L2224/3015 ,  H01L2224/30177 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/19041 ,  H02M3/158 ,  H01L2924/01028 ,  H01L2924/00

Abstract: Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson.

Abstract translation: 已经公开了包括具有多个互连金属层的HEMT和使用用于外部电路连接的焊料条的可焊接前金属结构的III族氮化物功率器件的一些示例性实施例。 可焊接的前金属结构可以包括诸如TiNiAg的三金属，并且可以被配置为暴露HEMT的源极和漏极触点作为交替的细长数字或条。 另外，单个封装可以集成多个这样的HEMT，其中前金属结构暴露出交替的指示的源极和漏极触点，这对于使用III族氮化物器件的DC-DC功率转换电路设计是有利的。 通过使用焊条进行外部电路连接，可以进行横向导通，从而有利于减少器件Rdson。

公开(公告)号：US08987883B2

公开(公告)日：2015-03-24

申请号：US14192756

申请日：2014-02-27

Applicant: International Rectifier Corporation

Inventor： Eung San Cho ,  Chuan Cheah

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49517 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L25/165 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/10346 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1426 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor and a sync transistor disposed on a common leadframe pad, a driver integrated circuit (IC) for driving the control and sync transistors, and conductive clips electrically coupling the top surfaces of the transistors to substrate pads such as leadframe pads. In this manner, the leadframe and the conductive clips provide efficient grounding or current conduction by direct mechanical connection and large surface area conduction, thereby enabling a package with significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections.

Abstract translation: 一个示例性的公开的实施例包括被配置为具有控制晶体管和设置在公共引线框焊盘上的同步晶体管的降压转换器的高功率半导体封装，用于驱动控制和同步晶体管的驱动器集成电路（IC） 晶体管的顶表面到衬底焊盘，例如引线框焊盘。 以这种方式，引线框架和导电夹子通过直接机械连接和大的表面积传导提供有效的接地或电流传导，从而与使用以下的传统封装方法相比，能够实现具有显着降低的电阻，形状因素，复杂性和成本的封装 用于晶体管互连的引线。

公开(公告)号：US20130207120A1

公开(公告)日：2013-08-15

申请号：US13804395

申请日：2013-03-14

Applicant: International Rectifier Corporation

Inventor： Chuan Cheah ,  Michael A. Briere

IPC: H01L27/088

CPC classification number: H01L29/41758 ,  H01L23/293 ,  H01L23/4824 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/452 ,  H01L29/7787 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05022 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05555 ,  H01L2224/05556 ,  H01L2224/05563 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/05639 ,  H01L2224/0603 ,  H01L2224/0615 ,  H01L2224/0616 ,  H01L2224/06177 ,  H01L2224/131 ,  H01L2224/29005 ,  H01L2224/29014 ,  H01L2224/29023 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/3003 ,  H01L2224/3015 ,  H01L2224/30177 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/19041 ,  H02M3/158 ,  H01L2924/01028 ,  H01L2924/00

Abstract: Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson.

Abstract translation: 已经公开了包括具有多个互连金属层的HEMT和使用用于外部电路连接的焊料条的可焊接前金属结构的III族氮化物功率器件的一些示例性实施例。 可焊接的前金属结构可以包括诸如TiNiAg的三金属，并且可以被配置为暴露HEMT的源极和漏极触点作为交替的细长数字或条。 另外，单个封装可以集成多个这样的HEMT，其中前金属结构暴露出交替的指示的源极和漏极触点，这对于使用III族氮化物器件的DC-DC功率转换电路设计是有利的。 通过使用焊条进行外部电路连接，可以进行横向导通，从而有利于减少器件Rdson。