MEMS SENSOR COMPENSATION FOR OFF-AXIS MOVEMENT

    公开(公告)号:US20190359479A1

    公开(公告)日:2019-11-28

    申请号:US16538166

    申请日:2019-08-12

    Abstract: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

    Gyroscope self test by applying rotation on Coriolis sense mass

    公开(公告)号:US10415994B2

    公开(公告)日:2019-09-17

    申请号:US15644534

    申请日:2017-07-07

    Abstract: A self-test method by rotating the proof mass at a high frequency enables testing the functionality of both the drive and sense systems at the same time. In this method, the proof mass is rotated at a drive frequency. An input force which is substantially two times the drive frequency is applied to the actuation structures to rotate the proof mass of the gyroscope around the sensitive axis orthogonal to the drive axis. An output response of the gyroscope at the drive frequency is detected by a circuitry and a self-test response is obtained.

    MEMS device to selectively measure excitation in different directions

    公开(公告)号:US10393768B2

    公开(公告)日:2019-08-27

    申请号:US14981877

    申请日:2015-12-28

    Abstract: A method and system for a sensor system of a device is disclosed. The sensor system includes a first MEMS sensor (FMEMS), a second MEMS sensor (SMEMS) and a signal processor (SP). An excitation is imparted to the device along a first axis (FA). The FMEMS has a first primary sense axis (FPSA), moves in response to a component of the excitation along the FA aligned with the FPSA and outputs a first signal proportional to an excitation along the FPSA. The SMEMS has a second primary sense axis (SPSA), moves in response to a component of the excitation along the FA aligned with the SPSA and outputs a second signal proportional to an excitation along the SPSA. The SP combines the first signal and the second signal to output a third signal proportional to the excitation along the FA. The FA, the FPSA and the SPSA have different orientations.

    Mode-tuning sense interface
    24.
    发明授权

    公开(公告)号:US10001387B2

    公开(公告)日:2018-06-19

    申请号:US15058084

    申请日:2016-03-01

    CPC classification number: G01C25/00 G01C19/5726 G01D5/24 G01R27/2605

    Abstract: A MEMS capacitive sensing interface includes a sense capacitor having a first terminal and a second terminal, and having associated therewith a first electrostatic force. Further included in the MEMS capacitive sensing interface is a feedback capacitor having a third terminal and a fourth terminal, the feedback capacitor having associated therewith a second electrostatic force. The second and the fourth terminals are coupled to a common mass, and a net electrostatic force includes the first and second electrostatic forces acting on the common mass. Further, a capacitance measurement circuit measures the sense capacitance and couples the first terminal and the third terminal. The capacitance measurement circuit, the sense capacitor, and the feedback capacitor define a feedback loop that substantially eliminates dependence of the net electrostatic force on a position of the common mass.

    Method of increasing MEMS enclosure pressure using outgassing material
    25.
    发明授权
    Method of increasing MEMS enclosure pressure using outgassing material 有权
    使用排气材料增加MEMS外壳压力的方法

    公开(公告)号:US09452925B2

    公开(公告)日:2016-09-27

    申请号:US14832786

    申请日:2015-08-21

    Abstract: Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.

    Abstract translation: 半导体制造工艺包括提供第一衬底,其具有设置在图案化顶层金属层上方的第一钝化层,并且还具有设置在第一钝化层上的第二钝化层; 第二钝化层具有顶表面。 所述方法还包括在第二钝化层的第一部分中形成开口,并且开口暴露第一钝化层的表面的一部分。 所述方法还包括图案化第二钝化层和第一钝化层以暴露图案化顶层金属层的部分并将第二衬底和第一衬底彼此结合。 接合发生在至少第一钝化层的暴露部分经历脱气的温度范围内。

    ELASTIC BUMP STOPS FOR MEMS DEVICES
    26.
    发明申请
    ELASTIC BUMP STOPS FOR MEMS DEVICES 审中-公开
    用于MEMS器件的弹性保护套

    公开(公告)号:US20140260613A1

    公开(公告)日:2014-09-18

    申请号:US14050201

    申请日:2013-10-09

    CPC classification number: G01C19/5733 G01P2015/0871 G01P2015/0874

    Abstract: A MEMS device includes at least one proof mass, the at least one proof mass is capable of moving to contact at least one target structure. The MEMS device further includes at least one elastic bump stop coupled to the proof mass and situated at a first distance from the target structure. The MEMS device additionally includes at least one secondary bump stop situated at a second distance from the target structure, wherein the second distance is greater than the first distance, and further wherein the at least one elastic bump stop moves to reduce the first distance when a shock is applied.

    Abstract translation: MEMS装置包括至少一个检测质量块,所述至少一个检验质量块能够移动以接触至少一个目标结构。 所述MEMS装置还包括至少一个耦合到所述检验质量块并且位于距离所述目标结构第一距离处的弹性凸块止动件。 MEMS装置还包括至少一个位于离目标结构第二距离处的次级凸块止动件,其中第二距离大于第一距离,并且其中,至少一个弹性凸块止动件移动以减小第一距离,当a 应用冲击。

    Internal electrical contact for enclosed MEMS devices
    27.
    发明授权
    Internal electrical contact for enclosed MEMS devices 有权
    封闭MEMS器件的内部电气接触

    公开(公告)号:US08822252B2

    公开(公告)日:2014-09-02

    申请号:US14033366

    申请日:2013-09-20

    Abstract: A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate.

    Abstract translation: 公开了一种在集成MEMS器件中制造电连接的方法。 该方法包括形成MEMS晶片。 形成MEMS晶片包括在第一半导体层中形成一个空腔,将第一半导体层与设置在第一半导体层和第二半导体层之间的电介质层结合到第二半导体层,并且通过第二半导体蚀刻至少一个通孔 层和介电层,并在第二半导体层上沉积导电材料并填充至少一个通孔。 形成MEMS晶片还包括图案化和蚀刻导电材料以形成一个间隔并在导电材料上沉积锗层,图案化和蚀刻锗层,以及图案化和蚀刻第二半导体层以限定一个MEMS结构。 该方法还包括将MEMS晶片接合到基底基板。

    MODE-TUNING SENSE INTERFACE
    28.
    发明申请
    MODE-TUNING SENSE INTERFACE 有权
    模式调节感应界面

    公开(公告)号:US20140167789A1

    公开(公告)日:2014-06-19

    申请号:US13720984

    申请日:2012-12-19

    CPC classification number: G01C25/00 G01C19/5726 G01D5/24 G01R27/2605

    Abstract: A MEMS capacitive sensing interface includes a sense capacitor having a first terminal and a second terminal, and having associated therewith a first electrostatic force. Further included in the MEMS capacitive sensing interface is a feedback capacitor having a third terminal and a fourth terminal, the feedback capacitor having associated therewith a second electrostatic force. The second and the fourth terminals are coupled to a common mass, and a net electrostatic force includes the first and second electrostatic forces acting on the common mass. Further, a capacitance measurement circuit measures the sense capacitance and couples the first terminal and the third terminal. The capacitance measurement circuit, the sense capacitor, and the feedback capacitor define a feedback loop that substantially eliminates dependence of the net electrostatic force on a position of the common mass.

    Abstract translation: MEMS电容感测接口包括具有第一端子和第二端子的感测电容器,并且具有与其相关联的第一静电力。 还包括在MEMS电容感测接口中的是具有第三端子和第四端子的反馈电容器,所述反馈电容器具有与其相关联的第二静电力。 第二和第四端子耦合到共同的质量,净静电力包括作用在公共质量上的第一和第二静电力。 此外,电容测量电路测量感测电容并耦合第一端子和第三端子。 电容测量电路,感测电容器和反馈电容器定义了基本上消除了净静电力对共同质量位置的依赖性的反馈回路。

    Internal electrical contact for enclosed MEMS devices
    29.
    发明授权
    Internal electrical contact for enclosed MEMS devices 有权
    封闭MEMS器件的内部电气接触

    公开(公告)号:US08564076B1

    公开(公告)日:2013-10-22

    申请号:US13754462

    申请日:2013-01-30

    Abstract: A MEMS device is disclosed. The MEMS device comprises a MEMS substrate. The MEMS substrate includes a first semiconductor layer connected to a second semiconductor layer with a dielectric layer in between. MEMS structures are formed from the second semiconductor layer and include a plurality of first conductive pads. The MEMS device further includes a base substrate which includes a plurality of second conductive pads thereon. The second conductive pads are connected to the first conductive pads. Finally, the MEMS device includes a conductive connector formed through the dielectric layer of the MEMS substrate to provide electrical coupling between the first semiconductor layer and the second semiconductor layer. The base substrate is electrically connected to the second semiconductor layer and the first semiconductor layer.

    Abstract translation: 公开了MEMS器件。 MEMS器件包括MEMS衬底。 MEMS基板包括连接到第二半导体层的第一半导体层,其间具有介电层。 MEMS结构由第二半导体层形成并且包括多个第一导电焊盘。 MEMS器件还包括在其上包括多个第二导电焊盘的基底基板。 第二导电焊盘连接到第一导电焊盘。 最后,MEMS器件包括通过MEMS衬底的电介质层形成的导电连接器,以提供第一半导体层和第二半导体层之间的电耦合。 基底基板电连接到第二半导体层和第一半导体层。

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