Abstract:
A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.
Abstract:
A self-test method by rotating the proof mass at a high frequency enables testing the functionality of both the drive and sense systems at the same time. In this method, the proof mass is rotated at a drive frequency. An input force which is substantially two times the drive frequency is applied to the actuation structures to rotate the proof mass of the gyroscope around the sensitive axis orthogonal to the drive axis. An output response of the gyroscope at the drive frequency is detected by a circuitry and a self-test response is obtained.
Abstract:
A method and system for a sensor system of a device is disclosed. The sensor system includes a first MEMS sensor (FMEMS), a second MEMS sensor (SMEMS) and a signal processor (SP). An excitation is imparted to the device along a first axis (FA). The FMEMS has a first primary sense axis (FPSA), moves in response to a component of the excitation along the FA aligned with the FPSA and outputs a first signal proportional to an excitation along the FPSA. The SMEMS has a second primary sense axis (SPSA), moves in response to a component of the excitation along the FA aligned with the SPSA and outputs a second signal proportional to an excitation along the SPSA. The SP combines the first signal and the second signal to output a third signal proportional to the excitation along the FA. The FA, the FPSA and the SPSA have different orientations.
Abstract:
A MEMS capacitive sensing interface includes a sense capacitor having a first terminal and a second terminal, and having associated therewith a first electrostatic force. Further included in the MEMS capacitive sensing interface is a feedback capacitor having a third terminal and a fourth terminal, the feedback capacitor having associated therewith a second electrostatic force. The second and the fourth terminals are coupled to a common mass, and a net electrostatic force includes the first and second electrostatic forces acting on the common mass. Further, a capacitance measurement circuit measures the sense capacitance and couples the first terminal and the third terminal. The capacitance measurement circuit, the sense capacitor, and the feedback capacitor define a feedback loop that substantially eliminates dependence of the net electrostatic force on a position of the common mass.
Abstract:
Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.
Abstract:
A MEMS device includes at least one proof mass, the at least one proof mass is capable of moving to contact at least one target structure. The MEMS device further includes at least one elastic bump stop coupled to the proof mass and situated at a first distance from the target structure. The MEMS device additionally includes at least one secondary bump stop situated at a second distance from the target structure, wherein the second distance is greater than the first distance, and further wherein the at least one elastic bump stop moves to reduce the first distance when a shock is applied.
Abstract:
A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate.
Abstract:
A MEMS capacitive sensing interface includes a sense capacitor having a first terminal and a second terminal, and having associated therewith a first electrostatic force. Further included in the MEMS capacitive sensing interface is a feedback capacitor having a third terminal and a fourth terminal, the feedback capacitor having associated therewith a second electrostatic force. The second and the fourth terminals are coupled to a common mass, and a net electrostatic force includes the first and second electrostatic forces acting on the common mass. Further, a capacitance measurement circuit measures the sense capacitance and couples the first terminal and the third terminal. The capacitance measurement circuit, the sense capacitor, and the feedback capacitor define a feedback loop that substantially eliminates dependence of the net electrostatic force on a position of the common mass.
Abstract:
A MEMS device is disclosed. The MEMS device comprises a MEMS substrate. The MEMS substrate includes a first semiconductor layer connected to a second semiconductor layer with a dielectric layer in between. MEMS structures are formed from the second semiconductor layer and include a plurality of first conductive pads. The MEMS device further includes a base substrate which includes a plurality of second conductive pads thereon. The second conductive pads are connected to the first conductive pads. Finally, the MEMS device includes a conductive connector formed through the dielectric layer of the MEMS substrate to provide electrical coupling between the first semiconductor layer and the second semiconductor layer. The base substrate is electrically connected to the second semiconductor layer and the first semiconductor layer.
Abstract:
The present invention relates to a fixed-fixed membrane for a microelectromechanical system (MEMS) microphone. In one embodiment, a MEMS acoustic sensor includes a substrate; a membrane situated parallel to the substrate; and at least one vent formed into the membrane, wherein the at least one vent is a curved opening in the membrane, and wherein the at least one vent is disposed substantially along a length of the membrane.