公开(公告)号：US20250054794A1

公开(公告)日：2025-02-13

申请号：US18933717

申请日：2024-10-31

Applicant: Kokusai Electric Corporation

Inventor： Yasuhiro MIZUGUCHI ,  Naofumi OHASHI ,  Tadashi TAKASAKI ,  Shun MATSUI

IPC: H01L21/677 ,  H01L21/67

Abstract: Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a processing method including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber when it is determined that a maintenance timing is reached based on information comprising at least the number of processed substrates; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.

公开(公告)号：US20220282369A1

公开(公告)日：2022-09-08

申请号：US17682867

申请日：2022-02-28

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yoshihiko YANAGISAWA ,  Naofumi OHASHI ,  Tadashi TAKASAKI ,  Shun MATSUI

IPC: C23C16/44 ,  C23C16/52 ,  H01L21/67

Abstract: There is provided a technique that includes: a process container processing one or more substrates; a support installed inside the process container and supporting the substrates on plane of the support; a first gas supplier capable of supplying first gas to first domain set in the process container; a second gas supplier capable of supplying second gas to second domain set in the process container; an exhaust buffer structure installed along outer circumference of the support; a first gas exhauster connected to the exhaust buffer structure and installed at downstream side of a flow of the first gas supplied from the first gas supplier; a second gas exhauster connected to the exhaust buffer structure and installed at a downstream side of a flow of the second gas supplied from the second gas supplier; and a third gas supplier capable of supplying a cleaning gas to the exhaust buffer structure.

公开(公告)号：US20200098653A1

公开(公告)日：2020-03-26

申请号：US16529501

申请日：2019-08-01

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Takafumi SASAKI ,  Kazuhiro MORIMITSU ,  Naofumi OHASHI ,  Tadashi TAKASAKI ,  Shun MATSUI

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/40 ,  G06N20/00 ,  C23C16/52

Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

公开(公告)号：US20200035523A1

公开(公告)日：2020-01-30

申请号：US16566760

申请日：2019-09-10

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yukinori ABURATANI ,  Takashi YAHATA ,  Tadashi TAKASAKI ,  Naofumi OHASHI ,  Shun MATSUI ,  Keita ICHIMURA

IPC: H01L21/67 ,  H01L21/677

Abstract: There is provided a technique that includes (a) performing a heating process on a substrate in a process chamber, (b) transferring the substrate between the process chamber and a load lock chamber connected to a vacuum transfer chamber by a transfer robot installed in the vacuum transfer chamber connected to the process chamber, and (c) reading transfer information corresponding to process information applied to the substrate from a memory device in which plural pieces of the process information on a process content of the substrate and plural pieces of the transfer information of the transfer robot corresponding to the plural pieces of the process information are recorded, and controlling the transfer robot to transfer the substrate based on the read transfer information.

公开(公告)号：US20190294151A1

公开(公告)日：2019-09-26

申请号：US16135930

申请日：2018-09-19

Applicant: Kokusai Electric Corporation

Inventor： Naofumi OHASHI ,  Toshiyuki KIKUCHI ,  Shun MATSUI ,  Tadashi TAKASAKI

IPC: G05B19/4155 ,  C23C16/52 ,  C23C16/54

Abstract: Described herein is a technique capable of improving the productivity of a substrate processing system including a plurality of process chambers. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) placing a storage container accommodating substrates on a loading port shelf; (b) transferring the substrates in a predetermined order from the storage container to process chambers capable of processing the substrates; (c) perform a substrate processing in the process chambers; (d) generating first count data corresponding to the processing chambers; (e) storing the first count data; (f) assigning transfer flag data to one of the process chambers next to another of the process chambers corresponding to a maximum count number of the first count data; and (g) transferring substrates accommodated in a next storage container of the storage container in the predetermined order based on the transfer flag data.

公开(公告)号：US20190287831A1

公开(公告)日：2019-09-19

申请号：US16263826

申请日：2019-01-31

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yasuhiro MIZUGUCHI ,  Naofumi OHASHI ,  Tadashi TAKASAKI ,  Shun MATSUI

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/52 ,  C23C16/44 ,  H01L21/68

Abstract: Described herein is a technique capable of capable of managing a substrate processing apparatus efficiently. According to one aspect of the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a position information acquisition part configured to acquire position information of the process chamber; a memory device configured to store the position information; and an information controller configured to cause the position information acquired by the position information acquisition part to be stored in the memory device and the position information stored in the memory device to be outputted.

公开(公告)号：US20190218664A1

公开(公告)日：2019-07-18

申请号：US16366507

申请日：2019-03-27

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Tetsuo YAMAMOTO ,  Kazuyuki TOYODA ,  Shun MATSUI

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  C23C16/34

CPC classification number: C23C16/455 ,  C23C16/34 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3211

Abstract: A substrate processing apparatus includes a substrate mounting table on which a substrate is mounted, a process chamber including the substrate mounting table, a gas supply unit configured to supply a gas into the process chamber, and a plasma generating unit configured to convert the gas supplied into the process chamber from the gas supply unit into a plasma state. The plasma generating unit includes a plasma generating chamber configured to serve as a flow path of the gas supplied into the process chamber from the gas supply unit, and a plasma generating conductor configured by a conductor disposed to surround the plasma generating chamber. The plasma generating conductor includes a plurality of main conductor parts extending along a mainstream direction of the gas within the plasma generating chamber, and a plurality of connection conductor parts configured to electrically connect the plurality of main conductor parts with each other.