公开(公告)号：US20220093435A1

公开(公告)日：2022-03-24

申请号：US17475535

申请日：2021-09-15

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Kenji SHINOZAKI ,  Yoshihiko YANAGISAWA ,  Noriaki MICHITA ,  Shinya SASAKI ,  Shuhei SAIDO ,  Tetsuo YAMAMOTO

IPC: H01L21/673 ,  H01L21/263 ,  H05B6/80

Abstract: Described herein is a technique capable of uniformly processing a substrate. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a microwave generator configured to supply a microwave to the process chamber to perform a heat treatment on the substrate; a substrate retainer configured to accommodate the substrate and a heat retainer provided above the substrate and retaining a temperature of the substrate heated by the microwave; and a first ring plate provided on an outer circumference of the heat retainer and whose outer diameter is greater than that of the substrate.

公开(公告)号：US20190218664A1

公开(公告)日：2019-07-18

申请号：US16366507

申请日：2019-03-27

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Tetsuo YAMAMOTO ,  Kazuyuki TOYODA ,  Shun MATSUI

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  C23C16/34

CPC classification number: C23C16/455 ,  C23C16/34 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3211

Abstract: A substrate processing apparatus includes a substrate mounting table on which a substrate is mounted, a process chamber including the substrate mounting table, a gas supply unit configured to supply a gas into the process chamber, and a plasma generating unit configured to convert the gas supplied into the process chamber from the gas supply unit into a plasma state. The plasma generating unit includes a plasma generating chamber configured to serve as a flow path of the gas supplied into the process chamber from the gas supply unit, and a plasma generating conductor configured by a conductor disposed to surround the plasma generating chamber. The plasma generating conductor includes a plurality of main conductor parts extending along a mainstream direction of the gas within the plasma generating chamber, and a plurality of connection conductor parts configured to electrically connect the plurality of main conductor parts with each other.

公开(公告)号：US20190006218A1

公开(公告)日：2019-01-03

申请号：US16103611

申请日：2018-08-14

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Kazuyuki TOYODA ,  Kazuhiro YUASA ,  Tetsuo YAMAMOTO

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing technique includes: a first heating device configured to heat a substrate to a first processing temperature; a first process chamber provided with the first heating device; a second heating device configured to heat the substrate to a second processing temperature utilizing microwaves, the second processing temperature being higher than the first processing temperature; a second process chamber provided with the second heating device; a substrate placement portion configured to load and unload the substrate with respect to the first process chamber and the second process chamber by placing and rotating the substrate; and a controller configured to respectively control the first heating device, the second heating device, and the substrate placement portion.

公开(公告)号：US20250022703A1

公开(公告)日：2025-01-16

申请号：US18902553

申请日：2024-09-30

Applicant: Kokusai Electric Corporation

Inventor： Yukinori ABURATANI ,  Naofumi OHASHI ,  Tetsuo YAMAMOTO

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/683

Abstract: Provided is a technique of processing a substrate including (a) adsorbing a first adsorption inhibitor to a first portion of the substrate at a first temperature, (b) forming a film on a second portion of the substrate by supplying a processing gas at a second temperature, (c) removing at least a part of the first adsorption inhibitor adsorbed to the substrate, at a third temperature, (d) supplying a second adsorption inhibitor to the substrate at a fourth temperature higher than or equal to the first temperature, (e) supplying the processing gas to the substrate at a fifth temperature, and (f) removing at least a part of the second adsorption inhibitor adsorbed to the substrate, at a sixth temperature. Where (b) is performed after (a), (c) is performed after (b), (d) is performed after (c), (e) is performed after (d), and (f) is performed after (e).

公开(公告)号：US20220307137A1

公开(公告)日：2022-09-29

申请号：US17694134

申请日：2022-03-14

Applicant: Kokusai Electric Corporation

Inventor： Kenta KASAMATSU ,  Atsushi HIRANO ,  Tetsuo YAMAMOTO ,  Takafumi SASAKI

IPC: C23C16/455 ,  C23C16/44

Abstract: There is provided a technique capable of uniformizing a flow of a gas discharged from a discharger by reducing a pressure difference in a substrate arrangement region of a process chamber. According to one aspect of the technique, there is provided a reaction tube in which a process chamber is provided and including an adjusting structure configured to suppress a flow of a gas discharged from a discharger, wherein a gas supplier is provided at one end of the process chamber and the discharger is provided at the other end of the process chamber, and a flow of the gas from the gas supplier to the discharger in the process chamber is adjusted by the adjusting structure such that the flow of the gas discharged from the discharger is uniformized.

公开(公告)号：US20220301864A1

公开(公告)日：2022-09-22

申请号：US17479554

申请日：2021-09-20

Applicant: Kokusai Electric Corporation

Inventor： Yukinori ABURATANI ,  Naofumi OHASHI ,  Tetsuo YAMAMOTO

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/683

Abstract: There is provided technique that includes (a) adsorbing a first adsorption inhibitor to a first portion of a substrate in a first process chamber by heating the substrate to a first temperature and supplying the first adsorption inhibitor; (b) after (a), forming a film on a second portion of the substrate, where the first adsorption inhibitor is not adsorbed, by heating the substrate to a second temperature higher than the first temperature and supplying a processing gas; and (c) after (b), removing the first adsorption inhibitor adsorbed to the substrate by heating the substrate to a third temperature higher than the second temperature.

公开(公告)号：US20190393056A1

公开(公告)日：2019-12-26

申请号：US16563466

申请日：2019-09-06

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yukitomo HIROCHI ,  Kazuhiro YUASA ,  Tetsuo YAMAMOTO ,  Yoshihiko YANAGISAWA ,  Shinya SASAKI ,  Noriaki MICHITA

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/324

Abstract: There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.

公开(公告)号：US20210407865A1

公开(公告)日：2021-12-30

申请号：US17473664

申请日：2021-09-13

Applicant: Kokusai Electric Corporation

Inventor： Kenji SHINOZAKI ,  Tetsuo YAMAMOTO ,  Yukitomo HIROCHI ,  Yoshihiko YANAGISAWA ,  Naoki HARA ,  Masaaki UENO ,  Hideto YAMAGUCHI ,  Hitoshi MURATA ,  Shuhei SAIDO ,  Kazuhiro KIMURA

IPC: H01L21/66 ,  H01L21/268 ,  H01L21/67 ,  H05B6/64 ,  F27B17/00 ,  F27D5/00

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a heat insulating plate in a substrate retainer to a processing temperature by an electromagnetic wave, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the processing temperature; (b) heating a test object provided with a chip that does not transmit a detection light of the thermometer and accommodated in the substrate retainer to the processing temperature, and measuring a temperature change of the chip by the thermometer until the processing temperature; (c) acquiring a correlation between the temperature change of the heat insulating plate and that of the chip based on measurement results; and (d) controlling a heater to heat the substrate based on the correlation and the temperature of the heat insulating plate measured by the thermometer.