公开(公告)号：US5550055A

公开(公告)日：1996-08-27

申请号：US449199

申请日：1995-05-24

Applicant: Ellis Reinherz ,  Peter Sayre ,  Hsiu-Ching Chang ,  Neil Richardson

Inventor： Ellis Reinherz ,  Peter Sayre ,  Hsiu-Ching Chang ,  Neil Richardson

IPC: A61K38/00 ,  C07K14/705 ,  C07K16/28 ,  C12N15/00 ,  C07H21/04 ,  C07K14/00 ,  C12P21/06

CPC classification number: C07K16/2806 ,  C07K14/70507 ,  A61K38/00

Abstract: A cDNA sequence encoding human T11 or a fragment thereof which is capable of inhibiting T-lymphocyte activation.

Abstract translation: 编码能够抑制T淋巴细胞活化的人T11或其片段的cDNA序列。

公开(公告)号：US5210487A

公开(公告)日：1993-05-11

申请号：US710768

申请日：1991-06-04

Applicant: Hitoshi Takahashi ,  Douglas Masnaghetti ,  Neil Richardson

Inventor： Hitoshi Takahashi ,  Douglas Masnaghetti ,  Neil Richardson

IPC: G01N23/225 ,  G01Q80/00 ,  G01R31/302 ,  G01R31/305 ,  H01L21/66

CPC classification number: G01R31/305

Abstract: A surface is probed with a pulsed electron beam and secondary electrons are detected to produce a detector signal. First portions of the detector signal are substantially dependent on the voltage of the surface being probed, while second portions of the detector signal are substantially independent of the voltage of the surface being probed. In general, the first and second portions of the detector signal include unwanted noise caused by low-level sampling due to beam leakage and/or by scintillator afterglow in the secondary-electron detector. The detector signal is sampled during the first signal portions and is sampled during the second signal portions. The sampled first signal portions are combined with the complement of the sampled second signal portions to produce a measured voltage signal representing voltage of the conductor. In a preferred sampling scheme, alternate electron-beam sampling pulses are held-off. A first gate samples the secondary-electron detector signal when sampling pulses are not held off. A second gate samples the secondary-electron detector signal when sampling pulses are held off, and these samples are inverted. The samples from the first gate are combined with the inverted samples from the second gate to substantially cancel unwanted background noise caused by beam leakage and/or scintillator afterglow after sufficient integration.

公开(公告)号：US4864228A

公开(公告)日：1989-09-05

申请号：US766905

申请日：1985-08-16

Applicant: Neil Richardson

Inventor： Neil Richardson

IPC: G01Q60/30 ,  G01R31/305 ,  H01J37/26

CPC classification number: H01J37/268 ,  G01R31/305

Abstract: An improved electron beam test probe apparatus and a method for use of said apparatus for use in measuring the potential in a specimen which enables measurements to be insensitive to local electric fields in the vicinity of the point at which the potential of the specimen is being measured. The apparatus consists of an electron beam for bombarding the specimen at the point at which the potential of the specimen is to be measured, a magnetic lens for collimating the secondary electrons emitted fom the specimen in response to this bombardment, and a detector system for measuring the energy distribution of the secondary electrons so collimated. Tubular electrodes are employed in the energy distribution detection system. These electrodes have significantly higher field uniformity and intercept a smaller fraction of the secondary electrons than wire mesh electrodes. The electrodes are supported on insulators constructed from slightly conductive plastic which prevent the buildup of static charges which can lead to unpredictable fields. The electron beam used to bombard the specimen is of a substantially lower energy than that used in scanning electron microscopes, thus reducing the problems associated with the high energy electron beam bombardment. Improved electronic delay circuitry which employs a tandem combination of a digital delay technique and an analog delay technique has been developed to allow the electron beam to be turned on in short pulses in precise time synchrony with test signal patterns applied to a circuit being tested. This delay circuitry allows the timing of these short pulses to be specified to an accuracy of 5 picoseconds relative to a trigger pulse which is applied to the delay circuitry several milliseconds earlier. An improved signal averaging circuit has been developed which improves the signal to noise ratio and response time.The apparatus may be used to produce an image of the specimen in the vicinity of the point under bombardment while measuring the potential at said point. The methods taught by the present invention allow the measurement or the potential on buried conductors located beneath an insulating layer. The methods taught also prevent drift in the electron beam resulting from varying surface electric fields on the specimen.

公开(公告)号：US4721909A

公开(公告)日：1988-01-26

申请号：US828157

申请日：1986-02-10

Applicant: Neil Richardson

Inventor： Neil Richardson

IPC: G01R31/305 ,  H01J37/04 ,  H01J37/26 ,  H01J37/147

CPC classification number: G01R31/305 ,  H01J37/045 ,  H01J37/268

Abstract: An apparatus for pulsing an electron beam in an electron beam test probe used for examining integrated circuits is disclosed. The apparatus includes a structure having two intersecting channels cut therein. The electron beam passes through a first one of these channels enroute to the integrated circuit being tested. A linear conductor is disposed along the axis of the second channel such that the combination of said conductor and said second channel forms a coaxial transmission line. An electric field is generated in the second channel by applying a suitable potential between the linear conductor and the second channel. This electric field extends into the first channel from the region common to both channels. When a suitable potential is applied between the linear conductor and the second channel, the electric field generated deflects the electrons traveling in the first channel sufficiently to cause said electrons to miss an aperture through which said electrons must pass to reach the circuit being analyzed.

Abstract translation: 公开了一种用于在用于检查集成电路的电子束测试探针中脉冲电子束的装置。 该装置包括其中切割有两个相交通道的结构。 电子束通过这些通道中的第一个通道到被测试的集成电路。 沿着第二通道的轴线设置线性导体，使得所述导体和所述第二通道的组合形成同轴传输线。 通过在线性导体和第二通道之间施加合适的电位，在第二通道中产生电场。 该电场从两个通道共同的区域延伸到第一通道中。 当在线性导体和第二通道之间施加合适的电位时，产生的电场使得在第一通道中行进的电子足够地偏转，使得所述电子错过所述电子必须通过的孔以到达被分析的电路。

公开(公告)号：US20120281275A1

公开(公告)日：2012-11-08

申请号：US13552642

申请日：2012-07-19

Applicant: Ady Levy ,  Samuel Ngai ,  Christopher F. Bevis ,  Stefano Concina ,  John Fielden ,  Walter Mieher ,  Dieter Mueller ,  Neil Richardson ,  Dan Wack ,  Larry Wagner

Inventor： Ady Levy ,  Samuel Ngai ,  Christopher F. Bevis ,  Stefano Concina ,  John Fielden ,  Walter Mieher ,  Dieter Mueller ,  Neil Richardson ,  Dan Wack ,  Larry Wagner

IPC: G06K7/10 ,  B05C11/00 ,  B05C9/00 ,  B05C11/02 ,  B05C5/02 ,  C23C16/44

CPC classification number: G01N21/9505 ,  G01N21/3581 ,  H01L22/12

Abstract: Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.

Abstract translation: 提供了使用太赫兹范围内的辐射来确定样本的一个或多个特征的系统和方法。 一个系统包括被配置为用辐射照射样本的照明子系统。 该系统还包括检测子系统，该检测子系统被配置为响应于样本的照射来检测从样本传播的辐射，并响应于检测到的辐射产生输出。 检测到的辐射包括太赫兹范围内的辐射。 另外，该系统包括配置成使用该输出来确定样本的一个或多个特性的处理器。

公开(公告)号：US20080246030A1

公开(公告)日：2008-10-09

申请号：US11675021

申请日：2007-02-14

Applicant: Akella V.S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas ,  Padma A. Satya

Inventor： Akella V.S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas ,  Padma A. Satya

IPC: H01L23/58 ,  H01L21/00

CPC classification number: H01L23/5226 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a semiconductor die having a scanning area. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The semiconductor die further includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.

Abstract translation: 公开了具有扫描区域的半导体管芯。 半导体管芯包括第一多个测试结构，其中第一多个测试结构中的每个测试结构完全位于扫描区域内。 半导体管芯还包括第二多个测试结构，其中第一多个测试结构中的每个测试结构仅部分位于扫描区域内。 测试结构被布置成使得扫描区域的扫描导致检测到扫描区域外的缺陷。

公开(公告)号：US20070145266A1

公开(公告)日：2007-06-28

申请号：US11450757

申请日：2006-06-09

Applicant: Avi Cohen ,  David Adler ,  Neil Richardson

Inventor： Avi Cohen ,  David Adler ,  Neil Richardson

IPC: G21K7/00

CPC classification number: H01J37/28 ,  H01J37/04 ,  H01J37/06 ,  H01J2237/04924 ,  H01J2237/06316 ,  H01J2237/162 ,  H01J2237/2817

Abstract: One embodiment relates to an apparatus which utilizes an electron beam for inspection or metrology of a substrate. The apparatus includes a CRT-type gun and deflectors to generate and scan the electron beam. The CRT-type gun may optionally be in a sealed vacuum. Another embodiment relates to a method of inspecting a substrate or measuring an aspect of the substrate. The method includes focusing an electron beam using electrostatic lenses formed by metal plates supported by and separated by fused glass beads or other insulating material. Other embodiments and features are also disclosed.

Abstract translation: 一个实施例涉及利用电子束来检查或测量基底的装置。 该装置包括CRT型枪和用于产生和扫描电子束的偏转器。 CRT型枪可以可选地处于密封真空中。 另一实施例涉及一种检查衬底或测量衬底的方面的方法。 该方法包括使用由熔融玻璃珠或其它绝缘材料支撑和分离的金属板形成的静电透镜来聚焦电子束。 还公开了其它实施例和特征。

公开(公告)号：US06528818B1

公开(公告)日：2003-03-04

申请号：US09648380

申请日：2000-08-25

Applicant: Akella V. S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas

Inventor： Akella V. S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas

IPC: H01L2358

CPC classification number: H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817

Abstract: Disclosed is a semiconductor die having a scanning area. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The semiconductor die further includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.

Abstract translation: 公开了具有扫描区域的半导体管芯。 半导体管芯包括第一多个测试结构，其中第一多个测试结构中的每个测试结构完全位于扫描区域内。 半导体管芯还包括第二多个测试结构，其中第一多个测试结构中的每个测试结构仅部分位于扫描区域内。 测试结构被布置成使得扫描区域的扫描导致检测到扫描区域外的缺陷。

公开(公告)号：US06509197B1

公开(公告)日：2003-01-21

申请号：US09648212

申请日：2000-08-25

Applicant: Akella V. S. Satya ,  Robert Thomas Long ,  Lynda C. Mantalas ,  Gustavo A. Pinto ,  Neil Richardson

Inventor： Akella V. S. Satya ,  Robert Thomas Long ,  Lynda C. Mantalas ,  Gustavo A. Pinto ,  Neil Richardson

IPC: H01L2100

CPC classification number: H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a semiconductor die having a lower test structure formed in a lower metal layer of the semiconductor die. The lower conductive test structure has a first end and a second end. The first end is coupled to a predetermined voltage level. The semiconductor die also includes an insulating layer formed over the lower metal layer. The die further includes an upper test structure formed in an upper metal layer of the semiconductor die. The upper conductive test structure is coupled with the second end of the lower conductive test structure. The upper metal layer is formed over the insulating layer. In a specific implementation, the first end of the lower test structure is coupled to ground. In another embodiment, the semiconductor die also includes a substrate and a first via coupled between the first end of the lower test structure and the substrate. In yet another aspect, the lower test structure is an extended metal line, and the upper test structure is a voltage contrast element. Methods for inspecting and fabricating such semiconductor die are also disclosed.

公开(公告)号：US5270643A

公开(公告)日：1993-12-14

申请号：US928919

申请日：1992-08-12

Applicant: Neil Richardson ,  Kenneth R. Wilsher

Inventor： Neil Richardson ,  Kenneth R. Wilsher

IPC: G01R31/305 ,  G01R31/319 ,  G01R27/26

CPC classification number: G01R31/31922 ,  G01R31/305

Abstract: An electron-beam test probe system (400) in which a pulsed laser-beam source (404) and a photocathode assembly (430) are used with an electron-beam column (426) to produce a pulsed electron beam at a stabilized repetition frequency. A pulse picker (414) allows the pulse repetition frequency of the pulsed electron beam to be reduced to a submultiple of the pulsed laser repetition frequency. A test pattern generator (416) is programmable to apply a desired pattern of test vector patterns to an electronic circuit to be probed, the test vector patterns being synchronized with the stabilized laser-beam pulse repetition frequency. A timebase circuit (412) allows the test vector patterns to be time-shifted relative to the pulsed electron beam. The electronic circuit under test can thus be probed at any desired point in the applied test vector pattern by control of the pulse picker and by time-shifting the test vector pattern.

Abstract translation: 电子束测试探针系统（400），其中脉冲激光束源（404）和光电阴极组件（430）与电子束柱（426）一起使用以产生稳定的重复频率的脉冲电子束 。 脉冲选择器（414）允许将脉冲电子束的脉冲重复频率减小到脉冲激光重复频率的一个微分。 测试图形生成器（416）可编程为将要测试矢量图案的期望图案应用于要探测的电子电路，测试矢量图案与稳定的激光束脉冲重复频率同步。 时基电路（412）允许测试矢量图相对于脉冲电子束被时移。 因此，可以通过控制脉冲拾取器和通过时移移动测试矢量图案，在被测试矢量模式中的任何所需点探测被测电子电路。