METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

    公开(公告)号:US20210028048A1

    公开(公告)日:2021-01-28

    申请号:US16977823

    申请日:2019-03-04

    Abstract: A method for producing a semiconductor device may include applying one or more semiconductor components onto a device body where the device body has a substrate and an integrated circuit. The semiconductor component(s) may include an active zone configured to receive radiation. The method may further include transferring a multitude of semiconductor components from a sacrificial wafer to a target wafer with the device bodies still coupled by using a stamp to place them onto said device bodies. The stamp may be pressed onto the semiconductor components to adhere to the semiconductor components to the stamp and transfer them. As soon as the stamp moves in the opposite direction, the semiconductor component(s) may be separated from holding structures by breaking away webs or their projections on the second semiconductor body and leaving a breaking point directly on an outside of the semiconductor component.

    Semiconductor laser and method for producing such a semiconductor laser

    公开(公告)号:US10797469B2

    公开(公告)日:2020-10-06

    申请号:US16343989

    申请日:2018-01-09

    Abstract: A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.

    SEMICONDUCTOR DEVICE
    23.
    发明申请

    公开(公告)号:US20200287072A1

    公开(公告)日:2020-09-10

    申请号:US16754612

    申请日:2018-10-16

    Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.

    Method for Operating an Autostersoscopic Display Device, and Autostereoscopic Display Device

    公开(公告)号:US20200169755A1

    公开(公告)日:2020-05-28

    申请号:US16632286

    申请日:2018-07-24

    Abstract: A method for operating a display device is disclosed. In an embodiment, a method for displaying images or films via a display device includes emitting, for each radiation direction, a partial image composed of sub-pixels of all pixels belonging to this radiation direction and receiving control data for at least some of the sub-pixels at the display device by a data compression algorithm, wherein the data compression algorithm comprises a delta coding, wherein the delta coding includes an initial value, wherein the initial value includes one of the partial images defined as a main image, wherein at least some of the remaining partial images are received as deviations from the main image, and wherein edges of a three-dimensional object to be displayed are excluded from data compression when merging surfaces enclose a real angle of 135° or less.

    Apparatus and headlight
    28.
    发明授权

    公开(公告)号:US11603031B2

    公开(公告)日:2023-03-14

    申请号:US16972637

    申请日:2019-06-06

    Abstract: In one embodiment, an apparatus may include a light source. The apparatus also includes a measuring laser, such as a semiconductor laser. The measuring laser is configured to generate pulses with a maximum pulse duration of 10 ns. A wavelength of maximum intensity of the measuring laser radiation generated by the measuring laser ranges from 400 nm to 485 nm inclusive. The measuring laser radiation is used for distance measurement by means of LIDAR, for example in a car headlight.

    Method of Manufacturing a Multilayer Optical Element

    公开(公告)号:US20210088704A1

    公开(公告)日:2021-03-25

    申请号:US16971529

    申请日:2019-02-28

    Abstract: A method for manufacturing a multilayer optical element is disclosed. In an embodiment the method includes providing a substrate, applying a first optical layer by applying a first layer having a dielectric first material having a first refractive index, structuring the first layer by sectionally removing the first material and filling first interspaces with a dielectric second material having a second refractive index different from the first refractive index so that the second material has at least the same height as the first material, and applying at least a second optical layer by applying a second layer having the first material, structuring the second layer by sectionally removing the first material so that the first optical layer is exposed in second interspaces between second areas with the first material and filling the second interspaces with the second material so that the second material has at least the same height as the first material.

Patent Agency Ranking