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    Semiconductor Chip, Method of Producing a Semiconductor Chip and Apparatus Having a Plurality of Semiconductor Chips
    21.
    发明申请
    Semiconductor Chip, Method of Producing a Semiconductor Chip and Apparatus Having a Plurality of Semiconductor Chips 审中-公开

    公开(公告)号：US20200168505A1

    公开(公告)日：2020-05-28

    申请号：US16078995

    申请日：2017-06-21

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Isabel Otto ,  Patrick Rode

    IPC: H01L21/78 ,  H01L21/28 ,  H01L23/538

    Abstract: A semiconductor chip, a method for producing a semiconductor chip and an apparatus having a plurality of semiconductor chips are disclosed. In an embodiment a chip includes a substrate and a semiconductor layer arranged at the substrate, wherein the substrate includes, at a side facing the semiconductor layer, a top side with a width B1 in a first lateral direction and, at a side opposite to the top side, a bottom side with a width B3 in the first lateral direction, wherein the substrate has a width B2 in the first lateral direction at a half height between the top side and the bottom side, and wherein the following applies to widths B1, B2 and B3: B1-B2 B3.

    Radiation-emitting semiconductor chip
    25.
    发明授权
    Radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片

    公开(公告)号：US09590008B2

    公开(公告)日：2017-03-07

    申请号：US14702807

    申请日：2015-05-04

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    IPC: H01L33/62 ,  H01L27/15 ,  H01L33/38 ,  H01L33/00 ,  H01L33/02

    CPC classification number: H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer.

    Abstract translation: 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 半导体层序列包括产生辐射并且被布置在第一半导体层和第二半导体层之间的有源区; 第一半导体层布置在有源区域背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层向载体延伸; 在发射区域中的第二半导体层导电地连接到第二连接层。

    Method for Producing a Nitride Compound Semiconductor Device
    27.
    发明申请
    Method for Producing a Nitride Compound Semiconductor Device 有权
    氮化物半导体器件的制造方法

    公开(公告)号：US20160093765A1

    公开(公告)日：2016-03-31

    申请号：US14891924

    申请日：2014-05-28

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Werner Bergbauer ,  Philipp Drechsel ,  Peter Stauss ,  Patrick Rode

    IPC: H01L33/00 ,  H01L33/06 ,  H01L33/12

    CPC classification number: H01L33/0075 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12

    Abstract: A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlxInyGa1-x-yN with 0≦x≦1, 0≦y≦1 and x+y≦1, is grown on onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.

    Abstract translation: 提供了一种用于生产氮化物化合物半导体器件的方法。 生长衬底具有硅表面。 包含Al x In y Ga 1-x-y N的缓冲层，其具有0和n1E; x和nlE; 1,0和n1E; y和nlE; 1和x + y和nlE; 1生长在衬底的硅表面上。 半导体层序列生长到缓冲层上。 缓冲层包括以使得缓冲层的横向晶格常数在第一区域中逐步或连续地增加的方式变化的材料组成，并且在沿着生长方向的第一区域的第二区域中逐步或连续地减小。 在与半导体层序列的界面处，缓冲层包括比邻接缓冲层的半导体层序列的半导体层更小的横向晶格常数。

    Optoelectronic semiconductor chip
    28.
    发明授权
    Optoelectronic semiconductor chip 有权
    光电半导体芯片

    公开(公告)号：US09136431B2

    公开(公告)日：2015-09-15

    申请号：US14447679

    申请日：2014-07-31

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Werner Bergbauer ,  Patrick Rode ,  Martin Strassburg

    IPC: H01L33/00 ,  H01L33/12 ,  H01L33/20 ,  H01L33/38 ,  H01L33/50 ,  H01L33/32 ,  H01L33/62 ,  H01L33/22 ,  B82Y40/00

    CPC classification number: H01L33/12 ,  B82Y40/00 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/48463

    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back.

    Abstract translation: 光电子半导体芯片包括在载体基板上包括氮化物化合物半导体材料的半导体层堆叠，其中所述半导体层堆叠包括发射电磁辐射的有源层，所述半导体层堆叠被布置在第一导电层和 所述第一导电层与所述半导体层堆叠的前部相邻，所述第一导电层电连接到覆盖所述半导体层堆叠的背面的至少一部分的第一电连接层， 并且第二导电类型的层电连接到布置在后面的第二电连接层。

    OPTOELECTRONIC SEMICONDUCTOR CHIP
    29.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
    光电子半导体芯片

    公开(公告)号：US20140339577A1

    公开(公告)日：2014-11-20

    申请号：US14362155

    申请日：2012-11-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Kölper ,  Alexander F. Pfeuffer ,  Patrick Rode

    IPC: H01L33/44 ,  H01L33/60 ,  H01L27/15

    CPC classification number: H01L33/44 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

    Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.

    Abstract translation: 光电子半导体芯片包括彼此间隔设置的多个有源区和布置在多个有源区的下侧的反射层，其中至少一个有源区具有主延伸方向， 所述有源区具有形成有第一半导体材料的芯区，所述有源区具有有源层，至少在相对于所述有源区的主延伸方向横向的方向上覆盖所述芯区，所述有源区具有覆盖层 形成有第二半导体材料，并且至少在相对于有源区的主延伸方向横向的方向上覆盖有源层，并且反射层反射在有源层中操作期间产生的电磁辐射。

    Optoelectronic Semiconductor Chip and Method for Producing the Latter
    30.
    发明申请
    Optoelectronic Semiconductor Chip and Method for Producing the Latter 有权
    光电半导体芯片及其制造方法

    公开(公告)号：US20140239253A1

    公开(公告)日：2014-08-28

    申请号：US14352575

    申请日：2012-10-08

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Adrian Stefan Avramescu ,  Patrick Rode ,  Martin Strassburg

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/08

    CPC classification number: H01L33/06 ,  H01L27/15 ,  H01L33/005 ,  H01L33/08 ,  H01L33/382 ,  H01L2224/48463

    Abstract: A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween.

    Abstract translation: 具有层堆叠的半导体芯片包括第一半导体层序列和第二半导体层序列。 第一半导体层序列包括第一导电类型的第一半导体区域，第二导电类型的第二半导体区域和布置在其间的有源区域。 第二半导体层序列包括第二导电类型的第二半导体区域，第一导电类型的第三半导体区域和布置在其间的第二有源区。

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