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    Optoelectronic semiconductor body and light emitting diode
    1.
    发明授权
    Optoelectronic semiconductor body and light emitting diode 有权

    公开(公告)号：US11018281B2

    公开(公告)日：2021-05-25

    申请号：US16313945

    申请日：2017-06-26

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Werner Bergbauer ,  Joachim Hertkorn ,  Alexander Walter

    IPC: H01L33/32 ,  H01L33/06 ,  H01L33/14 ,  H01L33/00

    Abstract: An optoelectronic semiconductor body includes an active region including a quantum well that generates electromagnetic radiation, a first region that impedes passage of charge carriers from the active region, and a second region that impedes passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, and the first region and the second region contain aluminum.

    Semiconductor Layer Sequence
    2.
    发明申请
    Semiconductor Layer Sequence 审中-公开

    公开(公告)号：US20190267511A1

    公开(公告)日：2019-08-29

    申请号：US16319454

    申请日：2017-09-04

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Werner Bergbauer ,  Joachim Hertkorn

    IPC: H01L33/06 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32

    Abstract: A semiconductor layer sequence is disclosed. In an embodiment the semiconductor layer sequence includes a pre-barrier layer comprising AlGaN, a pre-quantum well comprising InGaN having a first band gap, a multi-quantum well structure comprising a plurality of alternating main quantum wells of InGaN having a second band gap and main barrier layers of AlGaN or AlInGaN, wherein the second band gap is smaller than the first band gap and the main quantum wells are configured to generate a radiation having a wavelength of maximum intensity between 365 nm and 490 nm inclusive, a post-quantum well with a third band gap which is larger than the second band gap, a post-barrier layer comprising AlGaN or AlInGaN and an electron-blocking layer including AlGaN.

    OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCTION THEREOF
    5.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCTION THEREOF 审中-公开
    光电子半导体芯片及其生产方法

    公开(公告)号：US20150340561A1

    公开(公告)日：2015-11-26

    申请号：US14818630

    申请日：2015-08-05

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Werner Bergbauer ,  Patrick Rode ,  Martin Strassburg

    IPC: H01L33/32 ,  H01L33/50 ,  H01L33/00

    CPC classification number: H01L33/12 ,  B82Y40/00 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/48463

    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back.

    Abstract translation: 光电子半导体芯片包括在载体基板上包括氮化物化合物半导体材料的半导体层堆叠，其中所述半导体层堆叠包括发射电磁辐射的有源层，所述半导体层堆叠被布置在第一导电层和 所述第一导电层与所述半导体层堆叠的前部相邻，所述第一导电层电连接到覆盖所述半导体层堆叠的背面的至少一部分的第一电连接层， 并且第二导电类型的层电连接到布置在后面的第二电连接层。

    Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
    7.
    发明授权
    Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip 有权

    公开(公告)号：US11430907B2

    公开(公告)日：2022-08-30

    申请号：US17206911

    申请日：2021-03-19

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Joachim Hertkorn

    IPC: H01L31/18 ,  H01L33/12 ,  H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L31/0304 ,  H01L33/32

    Abstract: In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

    Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
    8.
    发明授权
    Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip 有权

    公开(公告)号：US11005003B2

    公开(公告)日：2021-05-11

    申请号：US16384550

    申请日：2019-04-15

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Joachim Hertkorn

    IPC: H01L31/18 ,  H01L33/12 ,  H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L31/0304 ,  H01L33/32

    Abstract: A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region, a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface and a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

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