公开(公告)号：US08624269B2

公开(公告)日：2014-01-07

申请号：US12989470

申请日：2009-04-09

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L27/15

CPC classification number: H01L33/08 ,  H01L27/153 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a space, with a second active zone which extends parallel to the first active zone in a different plane, and a compensating layer, which is located in the second region at the level of the first active zone, the compensating layer not containing any semiconductor material.

Abstract translation: 本文描述了一种辐射发射薄膜半导体芯片，其包括具有第一有源区的第一区域和与第一区域横向隔开一空间的第二区域，第二活性区域平行于第一活性区域延伸， 不同的平面和补偿层，其位于第一有源区的电平的第二区域中，补偿层不包含任何半导体材料。

公开(公告)号：US20120193657A1

公开(公告)日：2012-08-02

申请号：US13389661

申请日：2010-08-05

Applicant: Norwin von Malm ,  Ralph Wirth

Inventor： Norwin von Malm ,  Ralph Wirth

IPC: H01L33/50

CPC classification number: H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/49107 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor component includes a light-emitting diode chip with at least two emission regions that can be operated independently of each other and at least two differently designed conversion elements. During operation of the light-emitting diode chips each of the emission regions is provided for generating electromagnetic primary radiation. Each emission region has an emission surface by which at least part of the primary radiation is decoupled from the light-emitting diode chip. The conversion elements are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation. The differently designed conversion elements are disposed downstream of different emission surfaces. An electric resistance element is connected in series or parallel to at least one of the emission regions.

Abstract translation: 辐射发射半导体部件包括具有至少两个发射区域的发光二极管芯片，所述至少两个发射区域可以彼此独立地操作和至少两个不同设计的转换元件。 在发光二极管芯片的操作期间，每个发射区域被设置用于产生电磁一次辐射。 每个发射区域具有发射表面，通过该发射表面，至少一部分初级辐射与发光二极管芯片分离。 提供转换元件用于吸收至少一部分初级辐射并用于重新发射次级辐射。 不同设计的转换元件设置在不同发射表面的下游。 电阻元件串联或并联连接至至少一个发射区域。

公开(公告)号：US08203160B2

公开(公告)日：2012-06-19

申请号：US12443155

申请日：2007-09-19

Applicant: Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

Inventor： Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

IPC: H01L33/00

Abstract: An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

公开(公告)号：US20110291129A1

公开(公告)日：2011-12-01

申请号：US13128472

申请日：2009-11-13

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L33/08

CPC classification number: H05B33/0857 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic device that emits mixed light includes light in a first and a second wavelength range, including a first semiconductor light source having a first light-emitting diode, which during operation emits light in the first wavelength range with a first intensity; a second semiconductor light source having a second light-emitting diode, which during operation emits light in the second wavelength range with a second intensity, wherein the first and second wavelength ranges are different from one another; and a resistance element having a temperature-dependent electrical resistance, wherein the first wavelength and/or the first intensity of the light emitted by the first semiconductor light source have/has a first temperature dependence, and the second wavelength range and/or the second intensity of the light emitted by the second semiconductor light source have/has a second temperature dependence, which is different from the first temperature dependence, the resistance element and the first semiconductor light source form a series circuit, and the series circuit and the second semiconductor light source form a parallel circuit.

Abstract translation: 发射混合光的光电子器件包括第一和第二波长范围的光，包括具有第一发光二极管的第一半导体光源，其在操作期间以第一强度发射第一波长范围的光; 具有第二发光二极管的第二半导体光源，其在操作期间以第二强度在第二波长范围内发光，其中所述第一和第二波长范围彼此不同; 和具有温度依赖性电阻的电阻元件，其中由第一半导体光源发射的光的第一波长和/或第一强度具有第一温度依赖性，并且第二波长范围和/或第二波长范围 由第二半导体光源发出的光的强度具有与第一温度依赖性不同的第二温度依赖性，电阻元件和第一半导体光源形成串联电路，并且串联电路和第二半导体 光源形成并联电路。

公开(公告)号：US08067783B2

公开(公告)日：2011-11-29

申请号：US12527148

申请日：2008-01-31

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A chip includes at least one semiconductor body having a radiation-emitting region, and at least one first contact region which is provided for making electrical contact with the semiconductor body and is spaced apart laterally from the radiation-emitting region. An electrically conductive first contact layer which is transmissive to the emitted radiation and which connects a surface of the semiconductor body, is situated on the radiation exit side of the chip to the first contact region. The surface is free of the radiation-absorbing contact structures.

Abstract translation: 一种芯片包括至少一个具有辐射发射区域的半导体本体，以及至少一个第一接触区域，其被提供用于与半导体本体电接触并且与辐射发射区域横向隔开。 对于发射的辐射透射并且连接半导体本体的表面的导电的第一接触层位于芯片的辐射出口侧到第一接触区域。 该表面没有吸收辐射的接触结构。

公开(公告)号：US20110240955A1

公开(公告)日：2011-10-06

申请号：US12443155

申请日：2007-09-19

Applicant: Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

Inventor： Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

IPC: H01L27/15

CPC classification number: H01L27/15 ,  H01L24/24 ,  H01L25/0756 ,  H01L25/167 ,  H01L33/08 ,  H01L2224/32145 ,  H01L2924/0002 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00

Abstract: An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

Abstract translation: LED半导体体包括多个至少两个辐射生成有源层。 每个有源层具有正向电压，其中有源层的数量适应于工作电压，使得跨过与有源层串联连接的串联电阻器上的电压与电压下降最多相同的大小 跨越LED半导体体。 本发明还描述了LED半导体本体的各种用途。

公开(公告)号：US20110121322A1

公开(公告)日：2011-05-26

申请号：US12989470

申请日：2009-04-09

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L31/12 ,  H01L33/00

CPC classification number: H01L33/08 ,  H01L27/153 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a space, with a second active zone which extends parallel to the first active zone in a different plane, and a compensating layer, which is located in the second region at the level of the first active zone, the compensating layer not containing any semiconductor material.

Abstract translation: 本文描述了一种辐射发射薄膜半导体芯片，其包括具有第一有源区的第一区域和与第一区域横向隔开一空间的第二区域，第二活性区域平行于第一活性区域延伸， 不同的平面和补偿层，其位于第一有源区的电平的第二区域中，补偿层不包含任何半导体材料。

公开(公告)号：US20100084678A1

公开(公告)日：2010-04-08

申请号：US12595356

申请日：2008-05-21

Applicant: Klaus Streubel ,  Ralph Wirth

Inventor： Klaus Streubel ,  Ralph Wirth

IPC: H01L33/50 ,  H01L33/58

CPC classification number: H01L33/50 ,  H01L33/22 ,  H01L33/44 ,  H01L33/46

Abstract: A luminescent diode chip includes a semiconductor body, which produces radiation of a first wavelength. A luminescence conversion element produces radiation of a second wavelength from the radiation of the first wavelength. An angular filter element reflects radiation that impinges on the angular filter element at a specific angle in relation to a main direction of emission back in the direction of the semiconductor body.

Abstract translation: 发光二极管芯片包括产生第一波长的辐射的半导体本体。 发光转换元件从第一波长的辐射产生第二波长的辐射。 角度滤波器元件以相对于半导体主体的方向的主发射方向以特定角度反射照射在角度滤波器元件上的辐射。

公开(公告)号：US20090309120A1

公开(公告)日：2009-12-17

申请号：US12441758

申请日：2007-08-28

Applicant: Peter Heidborn ,  Reiner Windisch ,  Ralph Wirth

Inventor： Peter Heidborn ,  Reiner Windisch ,  Ralph Wirth

IPC: H01L33/00

CPC classification number: H01L25/0756 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone.

Abstract translation: 一种LED半导体元件，包括至少一个第一辐射生成有源层和至少一个第二辐射生成有源层，其在垂直方向上堆叠在第一有源层上方并与第一有源层串联连接，其中第一 有源层和第二有源层通过接触区域导电连接。

公开(公告)号：US20080283855A1

公开(公告)日：2008-11-20

申请号：US11663941

申请日：2005-09-27

Applicant: Klaus Streubel ,  Ralph Wirth

Inventor： Klaus Streubel ,  Ralph Wirth

IPC: H01L33/00

CPC classification number: H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: An optoelectronic thin-film chip is specified, comprising at least one radiation-emitting region (8) in an active zone (7) of a thin-film layer (2) and a lens (10, 12) disposed downstream of the radiation-emitting region (8). The lens is formed by at least one partial region of the thin-film layer (2), the lateral extent (Φ) of the lens (10, 12) being greater than the lateral extent of the radiation-emitting region (δ). A method for producing such an optoelectronic thin-film chip is furthermore specified.

Abstract translation: 规定了一种光电子薄膜芯片，其包括在薄膜层（2）的有源区（7）中的至少一个辐射发射区（8）和设置在辐射发射区（8）的下游的透镜（10,12） 发光区域（8）。 透镜由薄膜层（2）的至少一个部分区域形成，透镜（10,12）的横向范围（Phi）大于辐射发射区域（delta）的横向范围。 进一步说明制造这种光电薄膜芯片的方法。