公开(公告)号：US20250015614A1

公开(公告)日：2025-01-09

申请号：US18894219

申请日：2024-09-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kei TAKAHASHI ,  Yuki OKAMOTO ,  Minato ITO ,  Takahiko ISHIZU ,  Hiroki INOUE ,  Shunpei YAMAZAKI

IPC: H02J7/00 ,  H01M10/42 ,  H01M10/44 ,  H03K3/0231 ,  H03K17/082

Abstract: A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND1, a node ND2, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node ND2 through the capacitor. The comparison circuit has a function of comparing a voltage of the node ND1 and the voltage of the node ND2. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node ND2 is higher than the voltage of the node ND1.

公开(公告)号：US20230261017A1

公开(公告)日：2023-08-17

申请号：US18014207

申请日：2021-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki INOUE ,  Seiichi YONEDA ,  Yusuke NEGORO ,  Takayuki IKEDA ,  Naoto KUSUMOTO ,  Kensuke YOSHIZUMI ,  Shunpei YAMAZAKI

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14627 ,  H01L27/14621 ,  H01L27/14616 ,  H01L27/1461

Abstract: A highly functional imaging device is provided. A small imaging device is provided. An imaging device or the like capable of high-speed operation is provided. A highly reliable imaging device is provided. The imaging device includes a pixel array, and a light-blocking layer and a transparent conductive layer that are over the pixel array. The light-blocking layer includes a first region overlapping with a first pixel and a second region overlapping with a second pixel. The transparent conductive layer includes a region overlapping with the first region and a region overlapping with the second region. The transparent conductive layer has a light-transmitting property. The transparent conductive layer is electrically connected to the first region and the second region. First light enters the photoelectric conversion device included in the first pixel. Second light enters the photoelectric conversion device included in the second pixel. The imaging device has a function of sensing a focal point in image formation with use of a first electric signal generated by conversion of the first light and a second electric signal generated by conversion of the second light.

公开(公告)号：US20230075180A1

公开(公告)日：2023-03-09

申请号：US17796916

申请日：2021-01-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki INOUE ,  Seiichi YONEDA

IPC: H01L21/8238 ,  H01L27/088 ,  H01L27/146

Abstract: A semiconductor device that level-shifts a negative voltage and/or a positive voltage is provided. The semiconductor device includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, an input terminal, and an output terminal. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor and the output terminal. A second terminal of the second transistor is electrically connected to a first terminal of the third transistor. A first terminal of the fourth transistor is electrically connected to a gate of the second transistor and a first terminal of the first capacitor, and a second terminal of the first capacitor is electrically connected to the input terminal. The first transistor, the second transistor, the third transistor, and the fourth transistor are of the same polarity.

公开(公告)号：US20230054986A1

公开(公告)日：2023-02-23

申请号：US17904400

申请日：2021-02-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Seiichi YONEDA ,  Takayuki IKEDA ,  Hiroki INOUE ,  Yusuke NEGORO ,  Shunpei YAMAZAKI

IPC: H01L27/146

Abstract: An imaging device capable of image processing is provided. The imaging device has an image recognition function. In the imaging device, cells have a function of acquiring imaging data and a function of retaining weight data. Among the cells arranged in a matrix, some of the cells acquire imaging data and the rest of the cells retain weight data. Then, arithmetic operation is performed using the imaging data and the weight data. For example, all the imaging data can be subjected to arithmetic operation where products of the imaging data and the weight data are calculated and the sum of the calculated products is calculated. That is, product-sum operation can be performed. When an arithmetic operation result is captured by a neural network such as a convolutional neural network (CNN) or the like, the additional function can be used because image processing can be performed on the imaging data.

公开(公告)号：US20220264046A1

公开(公告)日：2022-08-18

申请号：US17628293

申请日：2020-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki INOUE ,  Seiichi YONEDA ,  Yusuke NEGORO ,  Takahiko ISHIZU ,  Hidetomo KOBAYASHI

IPC: H04N5/3745 ,  H04N5/351

Abstract: An imaging device having a motion detecting function and an image processing function is provided. The imaging device can detect a difference between a reference frame image and a comparative frame image, and can switch from a motion detecting mode to a normal image capturing mode when a significant difference is detected. A low-frame-rate operation in the motion detecting mode can reduce power consumption. Moreover, the imaging device has an image recognition function in combination with the motion detecting function, so that switching from the motion detecting mode to the normal image capturing mode can be performed when a particular image is recognized.

公开(公告)号：US20200343245A1

公开(公告)日：2020-10-29

申请号：US16765398

申请日：2018-11-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Munehiro KOZUMA ,  Takeshi AOKI ,  Hiroki INOUE ,  Shintaro HARADA ,  Daisuke MATSUBAYASHI

IPC: H01L27/105 ,  H01L27/12 ,  H01L23/34 ,  H01L29/786

Abstract: Provided is a storage device that achieves both retention operation at high temperatures and high-speed operation at low temperatures.The storage device includes a driver circuit and a plurality of memory cells, and the memory cell includes a transistor and a capacitor; the transistor includes a metal oxide in a channel formation region. In the case where the transistor includes a first gate and a second gate, the driver circuit has a function of driving the second gate, and the driver circuit outputs a potential corresponding to the temperature of the storage device or the temperature of an environment where the storage device is placed to the second gate in a period during which the memory cell retains data.

公开(公告)号：US20200295006A1

公开(公告)日：2020-09-17

申请号：US16885742

申请日：2020-05-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Fumika Akasawa ,  Hiroki INOUE ,  Takashi NAKAGAWA ,  Yoshiyuki KUROKAWA

IPC: H01L27/108

Abstract: To provide a semiconductor device that can reduce power consumption and retain data for a long time and a memory device including the semiconductor device. The semiconductor device includes a word line divider, a memory cell, a first wiring, and a second wiring. The word line divider is electrically connected to the first wiring and the second wiring. The memory cell includes a first transistor with a dual-gate structure. A first gate of the first transistor is electrically connected to the first wiring, and a second gate of the first transistor is electrically connected to the second wiring. The word line divider supplies a high-level potential or a low-level potential to the first wiring and supplies a predetermined potential to the second wiring, whereby a threshold voltage of the first transistor is changed. With such a configuration, a semiconductor device that can reduce power consumption and retain data for a long time is driven.

公开(公告)号：US20180151593A1

公开(公告)日：2018-05-31

申请号：US15821006

申请日：2017-11-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki INOUE ,  Fumika AKASAWA

IPC: H01L27/12 ,  H03K3/356 ,  G09G3/36

CPC classification number: H01L27/124 ,  G06F3/0412 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/046 ,  G09G2310/0289 ,  H01L27/1225 ,  H01L27/1255 ,  H03K3/356017

Abstract: A level shifter including a transistor that can be formed through the same process as a display portion is provided. A semiconductor device serves as a level shifter including transistors having the same conductivity type. The semiconductor device includes a so-called MIS capacitor in which metal, an insulator, and a semiconductor are stacked as a capacitor for boosting an input signal. Since the MIS capacitor is used, the gate-source voltage of a transistor for generating an output signal can be increased. Thus, boosting operation to generate the output signal can be performed more surely.

公开(公告)号：US20170186751A1

公开(公告)日：2017-06-29

申请号：US15390957

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Fumika Akasawa ,  Hiroki INOUE ,  Takashi NAKAGAWA ,  Yoshiyuki KUROKAWA

IPC: H01L27/108 ,  H01L29/16 ,  H01L23/535 ,  H01L29/24

CPC classification number: H01L27/10805 ,  G11C8/08 ,  G11C11/403 ,  G11C11/405 ,  G11C11/4074 ,  G11C11/4085 ,  H01L27/10808

Abstract: To provide a semiconductor device that can reduce power consumption and retain data for a long time and a memory device including the semiconductor device. The semiconductor device includes a word line divider, a memory cell, a first wiring, and a second wiring. The word line divider is electrically connected to the first wiring and the second wiring. The memory cell includes a first transistor with a dual-gate structure. A first gate of the first transistor is electrically connected to the first wiring, and a second gate of the first transistor is electrically connected to the second wiring. The word line divider supplies a high-level potential or a low-level potential to the first wiring and supplies a predetermined potential to the second wiring, whereby a threshold voltage of the first transistor is changed. With such a configuration, a semiconductor device that can reduce power consumption and retain data for a long time is driven.

公开(公告)号：US20170154678A1

公开(公告)日：2017-06-01

申请号：US15359017

申请日：2016-11-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takashi NAKAGAWA ,  Hiroki INOUE ,  Fumika AKASAWA ,  Yoshiyuki KUROKAWA

IPC: G11C16/10 ,  H01L27/12 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C7/1006 ,  G11C7/16 ,  G11C8/12 ,  G11C11/405 ,  G11C11/4087 ,  G11C16/0466 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/14616 ,  H01L27/14636 ,  H01L27/14643

Abstract: A semiconductor device with an arithmetic processing function is provided. The semiconductor device includes a first circuit and a second circuit each having a function of performing one-dimensional discrete cosine transform. By directly inputting output data of the first circuit to the second circuit, two-dimensional discrete cosine transform can be performed immediately. A memory cell array included in the first circuit is divided into a plurality of memory blocks. In the case where a selection transistor is provided in the memory block, data processing can be performed in each memory block.