公开(公告)号：US20230297253A1

公开(公告)日：2023-09-21

申请号：US17882112

申请日：2022-08-05

Applicant: SK hynix Inc.

Inventor： Dong Kyu LEE ,  Seung Geol BAEK ,  Jae Hyun YOO ,  Seon Ju LEE

IPC: G06F3/06

CPC classification number: G06F3/0625 ,  G06F3/064 ,  G06F3/0679

Abstract: A memory system may include a memory device including a plurality of memory areas each configured by a plurality of memory blocks; and a memory controller configured to generate zones each including at least one memory block selected from at least one of the memory areas included in the memory device, manage configuration information for each generated zone, sequentially store data from a first storage location of an open zone among the generated zones during a write operation on the open zone according to an external request, and determine a number of active target memory areas associated with the open zone on a basis of configuration information of the open zone.

公开(公告)号：US20190068222A1

公开(公告)日：2019-02-28

申请号：US15909144

申请日：2018-03-01

Applicant: SK hynix Inc.

Inventor： Seon Ju LEE

IPC: H03M13/11 ,  G11C11/56 ,  G11C29/52 ,  G06F11/10 ,  G06F3/06

Abstract: A data storage apparatus includes a nonvolatile memory device and a controller configured to decode on normal read data read from a target memory cell, calculate a standard deviation of history read voltages for a target memory block including the target memory cell when the decoding of the normal read data fails, compare the calculated standard deviation with a preset first threshold value and a preset second threshold value, and determine a decoding type and a decoding order for the target memory cell based on a comparison result.