公开(公告)号：US20230327357A1

公开(公告)日：2023-10-12

申请号：US18336272

申请日：2023-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heekang YUN ,  Hanseok MUN ,  Inha LEE ,  Kyungho LEE ,  Jaeryong HAN

IPC: H01R13/24 ,  H01R13/64 ,  H01R12/70 ,  H01R12/57 ,  H01R12/58 ,  H01R12/71

CPC classification number: H01R13/2407 ,  H01R13/64 ,  H01R12/7011 ,  H01R12/57 ,  H01R12/58 ,  H01R12/716

Abstract: A connector according to various embodiments of the present disclosure comprises: a housing; an accommodation groove formed in one portion of the connector; a guide comprising a first guide firmed on the side surface of the accommodation groove and a second guide formed on the side surface of the accommodation groove to be spaced a certain distance from the first guide; and a first contact arranged between the first guide and the second guide, wherein the first contact comprises a first bending portion and a second bending portion. The guide is in contact with a header and guides the position of the header. A first point of the first bending portion is in contact with the header, and as the first bending portion is bent, the first bending portion applies the pressure to the header so that the header is fixed to the connector. A second point of the first bending portion may be in contact with a third point of the second bending portion. Other various embodiments are possible.

公开(公告)号：US20230007163A1

公开(公告)日：2023-01-05

申请号：US17941302

申请日：2022-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub SHIM ,  Kyungho LEE ,  Masato FUJITA

IPC: H04N5/232 ,  G03B13/16 ,  H01L27/146

Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

公开(公告)号：US20220256705A1

公开(公告)日：2022-08-11

申请号：US17728363

申请日：2022-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon HA ,  Seyoung JANG ,  Sungjin KIM ,  Sanghoon PARK ,  Kyungho LEE ,  Younoh CHI

IPC: H05K1/14 ,  H01L25/065

Abstract: An electronic device is provided that includes a first circuit board including a first electronic component and a second electronic component disposed on a side of the first circuit board, a second circuit board spaced apart from the first circuit board and having a side facing the side of the first circuit board on which the first electronic component and the second electronic component are disposed, a first interposer disposed between the first circuit board and the second circuit board to form an inner space between the first circuit board and the second circuit board, and a second interposer disposed between the first circuit board and the second circuit board to divide the inner space into a first region and a second region, and wherein the first interposer and the second interposer electrically connect the first circuit board to the second circuit board.

公开(公告)号：US20220239854A1

公开(公告)日：2022-07-28

申请号：US17583504

申请日：2022-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taesub JUNG ,  Kyungho LEE

IPC: H04N5/361 ,  H04N5/369

Abstract: An image sensor including: a pixel array including a plurality of pixels and a row driver configured to drive the pixel array, wherein each of the plurality of pixels includes at least one photodiode, a transmission transistor, a selection transistor, a device isolation structure, and a bulk area, and the row driver is configured to adjust, for each of preset periods, sizes and application timings of a negative voltage applied to the device isolation structure and a bulk control voltage applied to the bulk area while a first pixel is driven.

公开(公告)号：US20220199660A1

公开(公告)日：2022-06-23

申请号：US17392925

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjoon LEE ,  Kyungho LEE ,  Jungbin YUN ,  Jihun KIM

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/355

Abstract: A pixel group of an image sensor includes first through fourth unit pixels in a matrix form of two pixels rows and two pixel columns, and a common floating diffusion region in a semiconductor substrate at a center of the pixel group and shared by the first through fourth unit pixels. Each of the first through fourth unit pixels includes a photoelectric conversion element in the semiconductor substrate, and a pair of vertical transfer gates in the semiconductor substrate and extending in a vertical direction perpendicular to a surface of the semiconductor substrate. The pair of vertical transfer gates transfer photo charges collected by the photoelectric conversion element to the common floating diffusion region. Image quality is enhanced by increasing sensing sensitivity of the unit pixel through the shared structure of the floating diffusion region and the symmetric structure of the vertical transfer gates.

公开(公告)号：US20210152765A1

公开(公告)日：2021-05-20

申请号：US17139427

申请日：2020-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub SHIM ,  Kyungho LEE

IPC: H04N5/355 ,  H04N5/345 ,  H04N5/243 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/357

Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.

公开(公告)号：US20210028204A1

公开(公告)日：2021-01-28

申请号：US16825245

申请日：2020-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masato FUJITA ,  Kyungho LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: A pixel array included in an auto-focus image sensor includes a substrate, a plurality of pixels, a deep device isolation region and a plurality of first ground regions. The substrate includes a first surface on which a gate electrode is disposed and a second surface opposite to the first surface. The plurality of pixels are disposed in the substrate, and include a plurality of first pixels configured to detect a phase difference and a plurality of second pixels configured to detect an image. The deep device isolation region is disposed in the substrate, extends substantially vertically from the second surface of the substrate to isolate the plurality of pixels from each other. The plurality of first ground regions are disposed adjacent to the first surface in the substrate and adjacent to only at least some of the plurality of first pixels.

公开(公告)号：US20200236310A1

公开(公告)日：2020-07-23

申请号：US16838517

申请日：2020-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub SHIM ,  Kyungho LEE

IPC: H04N5/355 ,  H04N5/357 ,  H04N5/3745 ,  H04N9/04 ,  H04N5/243 ,  H04N5/345

Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.

公开(公告)号：US20170207259A1

公开(公告)日：2017-07-20

申请号：US15405451

申请日：2017-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho CHOI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US20240292708A1

公开(公告)日：2024-08-29

申请号：US18442467

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myeongeon KIM ,  Bumsuk KIM ,  Jungchak AHN ,  Kyungho LEE

IPC: H10K59/65 ,  H01L23/00 ,  H01L25/18 ,  H10K59/131 ,  H10K59/95

CPC classification number: H10K59/65 ,  H01L24/05 ,  H01L24/08 ,  H01L25/18 ,  H10K59/131 ,  H10K59/95 ,  H01L24/80 ,  H01L2224/0557 ,  H01L2224/08145 ,  H01L2224/80357 ,  H01L2224/80379 ,  H01L2224/80896 ,  H01L2924/0504 ,  H01L2924/0544 ,  H01L2924/059

Abstract: Provided is a semiconductor device for video transmission display including a display unit including a plurality of light emitting elements constituting a plurality of unit display pixels, an image sensor unit disposed on the display unit so that the plurality of unit image sensor pixels corresponding to the same color and the plurality of unit display pixels overlap each other at least partially in a vertical direction, and a plurality of connection paths each including at least one through electrode and electrically connecting the plurality of unit image sensor pixels corresponding to the same color to the plurality of unit display pixels.